• Journal of Korea Multimedia Society
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• v.3 no.5
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• pp.535-541
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• 2000

In this paper, we analyzed the characteristics of schottky junction to develop the voltage swing of ISL, and simulated the characteristics with the programs at this junctions. Simulation programs for analytic characteristics are the SUPREM V, SPICE, Medichi, Matlab. The schottky junction is rectifier contact between platinum silicide and silicon, the characteristics with programs has simulated the same conditions. The analytic parameters were the turn-on voltage, saturation current, ideality factor in forward bias, and has shown the results of breakdown voltage between actual characteristics and simulation characteristics in reverse bias. As a result, th forward turn-on voltage, reverse breakdown voltage, barrier height were decreased but saturation current and ideality factor were increased by substrates increased concentration variations.

• Journal of Biomedical Engineering Research
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• v.27 no.6
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• pp.343-350
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• 2006

Medical magnetic stimulator generates strong magnetic field pulses. Clinical applications of the magnetic pulse are the stimulation of nervous system and the contraction of muscle. The unique source of the strong magnetic pulse is a capacitor-inductor resonator and this inductor generates a strong sinusoidal magnetic pulse by discharging the capacitor with high initial voltage. Continuous muscle contraction needs sequential generation of the magnetic pulses. However, to keep the magnitude of sequential pulses identical, an expensive high-voltage power supply have to support voltage drop of the capacitor between the pulses. A protection circuit between the supply and the resonator is necessary to protect the supply from reverse current caused by capacitor voltage reversal. In this paper, a new circuit structure of the magnetic stimulator adopting a low-frequency fly-back switching is proposed. The new circuit supports sequential pulse generation and allows the reverse current without damage. Performance of the new circuit is examined and a low-cost magnetic stimulator for urinary incontinence therapy is being developed using the presented method.

• Journal of Welding and Joining
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• v.32 no.3
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• pp.11-18
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• 2014

TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.232-233
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• 2008

The 4H-SiC schottky diodes treated by the various dry etch methods were fabricated and electrically characterized. The post etch process including an Inductively Coupled Plasma(ICP) etch and a Neutron Beam Etch(NBE) was performed after a high-temperature activation annealing without graphite cap in order to eliminate the damaged surface generated during the activation annealing. The reverse leakage current of diode treated by ICP was 1/35 times lower than that of the diode without any post etch at the anode bias of -100V, while the reverse leakage current of diode treated by NBE was 1/44 times lower at the same bias.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.132-139
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• 1992

We have designed a magnetic field gradient useful for cylindrical imaging in NMR-CT. The direc¬tion of the designed field is parallel to the axis and the gradient in the radial direction of cylindrical coordinate is monotonically increasing. The ratio of the gradient in the radial and axial direction is greater than 10 near the center of coordinate. This ratio depends on solenoid length, the number of reverse current turns at center, and the amount of the reverse current. We built a gradient coil based on the numerical simulation and tested the field generated by NMR-CT. The resulting image matches with the theoretical expectation within 10% error. Since the data acquisition time of 1-D imaging is significantly shorter than 2-D imaging, it becomes possible to image much more dynamic objects by the use of this gradient field.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.35-40
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• 2002

Ultra-power-saving SBR has been fabricated by using vanadium and molybdenum with low work function. Because reverse leakage current is increased in inverse proportion to work function, we implanted argon ion on the n-Si layer for decreasing leakage current. The dose and acceleration energy of the argon implantation in the silicon was 1$\times$10$^{14}$ ion/$\textrm{cm}^2$, 40 keV, respectively. The forward voltages drop of fabricated V-SBR and Mo-SBR were 0.25 V and 0.39 V at the same forward current density of 60 A/$\textrm{cm}^2$. As a result, it was found that the reverse leakage current of the fabricated V-SBR was reduced over 20$mutextrm{A}$ by the argon implantation in comparison with the no implanted V-SBR. Also, owing to argon implantation, the inferiority of characteristic of the SBR was not detected.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.667-673
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• 2010

Copper filling into TSV (through-silicon-via) and reduction of the filling time for the three dimensional chip stacking were investigated in this study. A Si wafer with straight vias - $30\;{\mu}m$ in diameter and $60\;{\mu}m$ in depth with $200\;{\mu}m$ pitch - where the vias were drilled by DRIE (Deep Reactive Ion Etching) process, was prepared as a substrate. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to reduce the time required complete the Cu filling into the TSV, the PPR (periodic pulse reverse) wave current was applied to the cathode of a Si chip during electroplating, and the PR (pulse-reverse) wave current was also applied for a comparison. The experimental results showed 100% filling rate into the TSV in one hour was achieved by the PPR electroplating process. At the interface between the Cu filling and Ti/ Au functional layers, no defect, such as a void, was found. Meanwhile, the electroplating by the PR current showed maximum 43% filling ratio into the TSV in an hour. The applied PPR wave form was confirmed to be effective to fill the TSV in a short time.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.1327-1329
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• 2000

The thyristor among the power-semi-conductor elements, which has large current capacity and high voltage, is used widely nowadays. When the thyristor was being used to the long time, this element may be able to arise the system trip caused by changing the characteristic and dropping the performance. Therefore, it would be necessary to analyze the characteristic of element to maintain the stable operation of the system. In oder to analyze this characteristic, it would be need to test forward direction, reverse direction and leakage current by supplying the half-sine wave voltage. Among these testing, transient current condition is generated from the testing of leakage current. This transient current may be the main factor of the error in the precise measurement of leakage current. Therefore, this paper analyzes the relationship between supply voltage and transient current in measuring leakage current of the SCR, and then suggests the condition and cause of transient current as appearing the leakage current in the testing the leakage current.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.8
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• pp.1394-1400
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• 2010

This paper introduces a newly improved Ultra-FRFET that has much better reverse recovery characteristic than that of the typical MOSFET and presents its effectiveness in the HV-BLU system of LCD TVs. The reverse recovery time, $T_{rr}$ of Ultra-FRFET is shorter than 40nsec and the peak value of reverse current, $i_{rr}$ is also much smaller compared to the typical MOSFET's, which are sufficient to prevent the MOSFET’s failures without additional FRDs and diodes in HV-BLU system with a half-bridge resonant inverter topology worked by PWM method. In order to verify the validity, the loss analysis and the implementation results in cases when both the conventional solution using typical MOSFETs with additional FRDs and a new solution using Ultra-FRFETs are applied to a HV-BLU of 40" LCD TV are presented. As a result, the effectiveness of Ultra-FRFET was verified and the results are presented in this paper.