• Electrical & Electronic Materials
• /
• v.9 no.10
• /
• pp.1019-1026
• /
• 1996

In this study, we may be presented the carrier oscillation properties for the low-voltage varistor fabricated by a new method of three composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of nontrapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. In particularly, current oscillation phenomena is hardly shown in the high electric field. It is that the injected carriers from both electrodes are directly from the conduction band of forward biased ZnO grain through the intergranular layer into the reverse biased ZnO grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Journal of information and communication convergence engineering
• /
• v.1 no.1
• /
• pp.23-26
• /
• 2003

A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

• Journal of Power Electronics
• /
• v.14 no.4
• /
• pp.632-640
• /
• 2014

For low-power high-frequency LED driver applications in small form factor mobile products, a high-efficiency boundary conduction mode tapped-inductor boost converter is proposed. In the proposed converter, the switch and the diode achieve soft-switching, the diode reverse-recovery is alleviated, and the switching frequency is very insensitive to output voltage variations. The circuit is quantitatively characterized, and the design guidelines are presented. Experimental results from an LED backlight driver prototype for a 14 inch notebook computer are also presented.

• Journal of Power Electronics
• /
• v.14 no.2
• /
• pp.265-270
• /
• 2014

In terms of power loss, a MOSFET has two advantages over an IGBT with an antiparallel diode: purely resistive without an offset voltage in conduction and no tail current at turn-off. However, the reverse recovery characteristic of the body diode is so poor that MOSFETs have not yet been available for high-voltage power converters with bidirectional power flow legs. This paper introduces how MOSFETs can be fully applied to high-voltage power converters with bidirectional power flow legs in order to achieve high efficiency. With a bidirectional DC-DC converter with one leg as the simplest example, the basic circuit topology and operating principle are described in detail. The high efficiency and stable operation of the proposed converter are validated through experiments with a 1.5 kW prototype.

• Proceedings of the KIPE Conference
• /
• 2011.07a
• /
• pp.287-289
• /
• 2011

본 논문은 인피니언 테크놀로지스의 RC-IGBT (Reverse Conducting Isolated Gate Bipolar Transistor)와 SOI 드라이브 IC(Integrated Circuit)를 사용한 DIL(Dual-In-Line) 구조의 저전력 모듈인 CIPOS TM (Control Integrated POwer System) 제품을 소개한다. 이 전력 모듈은 최적의 게이트 구동회로, 트렌치 필드스톱의 RC-IGBT를 사용하여 기존의 IGBT 와 Diode를 사용하는 구조에서 최소화 된 패키지 크기를 사용하여 높은 효율을 구현할 수 있다. 본 논문을 통하여 인버터의 어플리케이션에 적합하게 설계된 전력모듈에 대한 소개와 그 특징 및 시스템 구성을 위한 고려사항에 대하여 기술하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.3
• /
• pp.99-104
• /
• 2002

lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.

• Journal of the Korean Vacuum Society
• /
• v.15 no.2
• /
• pp.186-193
• /
• 2006

In this study, we analyzed the electrical and optical properties of metalorganic chemical vapor deposition grown InGaAs/InGaAsP/InP quantum dot(QD) molecules by using photoluminescence and deep-level transient spectroscopy. From these resulte, the energy levels of the large QDs are located at deeper region from the conduction band edge of the barrier than that of the small QDs, The large QDs seem to have the energy states more than two, and these energy levels of the QD molecules are located at 0.35, 0.42, and 0.45 eV from conduction band edge under -4 V reverse bias conditions. The energy levels are closely coupled under low reverse bias, and then decoupled as the bias voltage is increased.

• Proceedings of the KIEE Conference
• /
• 2001.07b
• /
• pp.946-949
• /
• 2001

This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of dc to dc PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of dc to dc PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5 kW prototype boost converter operating at 40kHz.

• Journal of Electrical Engineering and Technology
• /
• v.11 no.3
• /
• pp.592-601
• /
• 2016

This paper presents the modeling of insulated-gate bipolar transistor (IGBT) in electromagnetic transients program (EMTP) simulation for the reliable calculation of switching and conduction losses. The conventional approach considering the physical property of switching devices requires many attribute parameters and large computation efforts. In contrast, the proposed method uses the curve fitting and interpolation techniques based on typical switching waveforms and a user-defined component with variable resistances to capture the dynamic characteristics of IGBTs. Therefore, the simulation time can be efficiently reduced without losing the accuracy while avoiding the extremely small time step, which is required in simulation by the conventional method. The EMTP based simulation includes turn-on and turn-off transients of IGBT, saturation state, forward voltage of free-wheeling diode, and reverse recovery characteristics, etc. The effectiveness of proposed modeling for the EMTP simulation is verified by the comparison with experimental results obtained from practical implementation in hardware.

• Journal of Power Electronics
• /
• v.12 no.3
• /
• pp.377-386
• /
• 2012

An interleaved bridgeless buck-boost AC/DC converter is presented in this paper to achieve the characteristics of low conduction loss, a high power factor and low harmonic and ripple currents. There are only two power semiconductors in the line current path instead of the three power semiconductors in a conventional boost AC/DC converter. A buck-boost converter operated in the boundary conduction mode (BCM) is adopted to control the active switches to achieve the following characteristics: no diode reverse recovery problem, zero current switching (ZCS) turn-off of the rectifier diodes, ZCS turn-on of the power switches, and a low DC bus voltage to reduce the voltage stress of the MOSFETs in the second DC/DC converter. Interleaved pulse-width modulation (PWM) is used to control the switches such that the input and output ripple currents are reduced such that the output capacitance can be reduced. The voltage doubler topology is adopted to double the output voltage in order to extend the useable energy of the capacitor when the line voltage is off. The circuit configuration, principle operation, system analysis, and a design example are discussed and presented in detail. Finally, experiments on a 500W prototype are provided to demonstrate the performance of the proposed converter.