• Title/Summary/Keyword: retention time

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A study on the fabrication and characteristics of the scaled MONOS nonvolatile memory devices for low voltage EEPROMs (저전압 EEPROM을 위한 Scaled MONOS 비휘발성 기억소자의 제작 및 특성에 관한 연구)

  • 이상배;이상은;서광열
    • Electrical & Electronic Materials
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    • v.8 no.6
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    • pp.727-736
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    • 1995
  • This paper examines the characteristics and physical properties of the scaled MONOS nonvolatile memory device for low programming voltage EEPROM. The capacitor-type MONOS memory devices with the nitride thicknesses ranging from 41.angs. to 600.angs. have been fabricated. As a result, the 5V-programmable MONOS device has been obtained with a 20ms programming time by scaling the nitride thickness to 57.angs. with a tunneling oxide thickness of 19.angs. and a blocking oxide thickness of 20.angs.. Measurement results of the quasi-static C-V curves indicate, after 10$\^$6/ write/erase cycles, that the devices are degraded due to the increase of the silicon-tunneling oxide interface traps. The 10-year retention is impossible for the device with a nitride less than 129.angs.. However, the MONOS memory device with 10-year retentivity has been obtained by increasing the blocking oxide thickness to 47.angs.. Also, the memory traps such as the nitride bulk trap and the blocking oxide-nitride interface trap have been investigated by measuring the maximum flatband voltage shift and analyzing through the best fitting method.

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Fabrication and Properties of MFISFET using SrBi2Ta2O9SiN/Si Structures (SrBi2Ta2O9SiN/Si 구조를 이용한 MFISFET의 제작 및 특성)

  • 김광호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.5
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    • pp.383-387
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    • 2002
  • N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.

The Impact of Customer Value and Internet Shopping Mall on Customer Satisfaction and Customer Loyalty

  • Sun, Han-Gil
    • Journal of Information Management
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    • v.40 no.1
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    • pp.183-197
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    • 2009
  • With development of the internet, internet shopping is taking its place as one of digitalization industries transcending time and space beyond the scope of commercial activities as the means of goods sales and purchase. We studied about the relations of customer value, environment of internet shopping mall, customer satisfaction and loyalty. Customer value is customers' subjective evaluation, which is formed after their purchasing and consuming. Customer satisfaction can be characterized as post-purchase evaluation of product quality given pre-purchase expectations. Customer loyalty is a potentiality or ensure of durative relationship between customer and enterprises. Customer satisfaction functions as an antecedent of customer loyalty, while customer value does customer satisfaction. It prevents customer churn and consolidates retention, thereby constituting an important cause of customer loyalty. This study shows that customer value, environment of internet shopping mall and customer satisfaction are each found to have a direct effect on customer loyalty. The results provide empirical support for relation between customer satisfaction and loyalty. To increase customer satisfaction and customer loyalty in internet shopping mall is the primary purpose of this study. We believe that only high quality based customer programs accompanied by well designed loyalty programs can be effective in increasing customer retention.

A dynamic procedure for defection detection and prevention based on SOM and a Markov chain

  • Kim, Young-ae;Song, Hee-seok;Kim, Soung-hie
    • Proceedings of the KAIS Fall Conference
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    • 2003.11a
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    • pp.141-148
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    • 2003
  • Customer retention is a common concern for many industries and a critical issue for the survival in today's greatly compressed marketplace. Current customer retention models only focus on detection of potential defectors based on the likelihood of defection by using demographic and customer profile information. In this paper, we propose a dynamic procedure for defection detection and prevention using past and current customer behavior by utilizing SOM and Markov chain. The basic idea originates from the observation that a customer has a tendency to change his behavior (i.e. trim-out his usage volumes) before his eventual withdrawal. This gradual pulling out process offers the company the opportunity to detect the defection signals. With this approach, we have two significant benefits compared with existing defection detection studies. First, our procedure can predict when the potential defectors could withdraw and this feature helps to give marketing managers ample lead-time for preparing defection prevention plans. The second benefit is that our approach can provide a procedure for not only defection detection but also defection prevention, which could suggest the desirable behavior state for the next period so as to lower the likelihood of defection. We applied our dynamic procedure for defection detection and prevention to the online gaming industry. Our suggested procedure could predict potential defectors without deterioration of prediction accuracy compared to that of the MLP neural network and DT.

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Frit-Inlet Asymmetrical Flow Field-Flow Fractionation (FI-ARIFF): A Stopless Separation Technique for Macromlecules and Nanopariticles

  • Mun, Myeong Hui
    • Bulletin of the Korean Chemical Society
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    • v.22 no.4
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    • pp.337-348
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    • 2001
  • This article gives an overview of a recently developed channel system, frit-inlet asymmetrical flow field-flow fractionation (FI-AFlFFF), which can be applied for the separation of nanoparticles, proteins, and water soluble polymers. A conventiona l asymmetrical flow FFF channel has been modified into a frit-inlet asymmetrical type by introducing a small inlet frit near the injection point and the system operation of the FI-AFlFFF channel can be made with a great convenience. Since sample components injected into the FI-AFlFFF channel are hydrodynamically relaxed, sample injection and separation processes proceed without interruption of the migration flow. Therefore in FI-AFlFFF, there is no requirement for a valve operation to switch the direction of the migration flow that is normally achieved during the focusing/relaxation process in a conventional asymmetrical channel. In this report, principles of the hydrodynamic relaxation in FI-AFlFFF channel are described with equations to predict the retention time and to calculate the complicated flow variations in the developed channel. The retention and resolving power of FI-AFlFFF system are demonstrated with standard nanospheres and protreins. An attempt to elucidate the capability of FI-AFlFFF system for the separation and size characterization of nanoparticles is made with a fumed silica particle sample. In FI-AFlFFF, field programming can be easily applied to improve separation speed and resolution for a highly retaining component (very large MW) by using flow circulation method. Programmed FI-AFlFFF separations are demonstrated with polystyrene sulfonate standards and pululans and the dynamic separation range of molecular weight is successfully expanded.

The Analysis of Lateral Charge Migration at 3D-NAND Flash Memory by Tapering and Ferroelectric Polarization (Tapering과 Ferroelectric Polarization에 의한 3D NAND Flash Memory의 Lateral Charge Migration 분석)

  • Lee, Jaewoo;Lee, Jongwon;Kang, Myounggon
    • Journal of IKEEE
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    • v.25 no.4
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    • pp.770-773
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    • 2021
  • In this paper, the retention characteristics of 3D NAND flash memory applied with tapering and ferroelectric (HfO2) structure were analyzed after programming operation. Electrons trapped in nitride are affected by lateral charge migration over time. It was confirmed that more lateral charge migration occurred in the channel thickened by tapering of the trapped electrons. In addition, the Oxide-Nitride-Ferroelectric (ONF) structure has better lateral charge migration due to polarization, so the change in threshold voltage (Vth) is reduced compared to the Oxide-Nitride-Oxide (ONO) structure.

Effects of Operation Parameters on Pollutants Removal in a Lab-Scale Multi-Layered Soil Filtration System (하천 수질정화를 위한 실험실 규모 다단식 토양여과 시스템에서 오염물질 제거에 미치는 운전인자의 영향)

  • Won, Se-Yeon;Ki, Dong-Won;Yoon, Min-Hyeok;Maeng, Sung-Kyu;Ahn, Kyu-Hong;Park, Joon-Hong;Song, Kyung-Guen
    • Journal of Korean Society of Environmental Engineers
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    • v.34 no.2
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    • pp.91-96
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    • 2012
  • In this study we investigated the effects of operational parameters of a multi-layered soil filtration (filter depth, filtration velocity, and continuous/intermittent operation) on removal of pollutants in river water. As filter depth increased removal of all the pollutants (COD, TP, TN, and $NH_4$-N) was increased because the increase in filter depth increased in contact time between media and pollutants. The removal of TP and $NH_4$-N more increased with the increase in filter depth, comparing to the biological COD removal which was performed only in the top layer, since the removal mechanism of TP and $NH_4$-N was physicochemical process occurring throughout the whole layers. However, the reduction in filtration velocity resulted in decrease of removal all the pollutants removal due to shorter retention time. Biological COD removal was more influenced with the reduction in filtration velocity (longer retention time), than the removal of TP and $NH_4$-N. Because biological process was occurred only in the top layer which has relatively shorter retention time, comparing with physicochemical process occurred throughout whole media. Therefore, it is desirable that the operation parameters be controlled toward increasing retention time, in order to achieve efficient pollutants removal. The change in operation mode (continuos vs. intermittent operations) did not provide significant effects on the pollutant treatment efficiency by the multi-layered soil filtration system. Our findings suggest that for stable long-term operation it should be considered keeping conditions for biological activity and accelerating clogging.

Characterization of behaviors using electric pulse for phase switching operation of Ge2Sb2Te5 material

  • Lee, Hyeon-Cheol;Choe, Du-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.322-322
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    • 2016
  • Phase change memory (PCM) has attracted much attention as one of the most promising candidates for next-generation nonvolatile memory. In that regard, the purposes of the study are to propose reference of effective pulse parameter to control phase switching operation and to invest the effect of nitrogen doped in PCM materials for improved cycling stability and economic energy consumption. Switching operation of PCM is affected by electric pulse parameter and as shown in figure.1 are composed to RT(rising time), ST(setting time), FT(falling time) and the effect of these parameter was precisely investigated. Transmission electron microscope (TEM) was used to confirm fine structure and retention cycle test was conducted to confirm reliability. Finally improvement reliability and economic power consumption in quantitatively are obtainable by optimum pulse parameter and nitrogen doping in GST material. these study is related to the engineering background of other semiconductor industries and it have confirmed to possibility further applications.

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Ferroelectric P(VDF/TrFE) Copolymers in Low-Cost Non-Volatile Data Storage Applications

  • Prabu A. Anand;Lee, Jong-Soon;Chang You-Min;Kim, Kap-Jin
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.237-237
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    • 2006
  • P(VDF/TrFE(72/28) ultrathin films were used in the fabrication of Metal-Ferroelectric polymer-Metal (MFM) single bit device with special emphasis on uniform film surface, faster dipole switching time under applied external field and longer memory retention time. AFM and FTIR-GIRAS were complementary in analyzing surface crystalline morphology and the resultant change in chain orientation with varying thermal history. DC-EFM technique was used to 'write-read-erase' the data on the memory bit in a much faster time than P-E studies. The results obtained from this study will enable us to have a good understanding of the ferroelectric and piezoelectric behavior of P(VDF/TrFE)(72/28) thin films suitable for high density data storage applications.

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Warm Needling Treatment in Korea: A Literature Review

  • Kim, Chang Wan;Park, Jin Seo;Won, Jee Yeong;Han, Da Young;Lee, Kyoung Yoon
    • Journal of Acupuncture Research
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    • v.37 no.2
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    • pp.69-78
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    • 2020
  • Although there have been studies investigating the clinical effects of warm needling (WN) for specific diseases, a comprehensive review of WN is needed. Four Korean internet databases were used in the review of WN treatment performed in Korea. The search terms used to retrieve articles were "warm needling (in Korean; 온침)," "warm acupuncture," and "warm needle." A total of 29 articles were reviewed. The following aspects of WN were investigated: language and terminology, study design, use of Standards for Reporting Interventions in Clinical Trials of Acupuncture, research ethics, moxibustion types, number of moxa used, moxa combustion time, needle retention time, treatment time and frequency, acupoints, meridians, acupuncture size and depth, disease classification, pattern identification, outcome measures, and adverse effect. More sophisticated and precise studies on WN are required.