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A Study on the Bend Deformation Cause Analysis of CAE Applied Wire to Board Connectors (압접 커넥터 CAE 적용 휨 변형 원인 분석에 관한 연구)

  • Jeon, Yong-Jun;Shin, Kwang-Ho;Heo, Young-Moo
    • Design & Manufacturing
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    • v.10 no.1
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    • pp.19-25
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    • 2016
  • Connectors are very important components that transmit electric signals to different parts. It must maintain intensity of the connector to prevent defects from impact and maintain contact to transmit electric signals. Most of the external parts of the connector, which act as the main framework, are formed by injection molding. However, bend deformation occurs for injection molded products due to the residual stress left inside the product after product molding. When the bend deformation is large, it does not come into complete contact when being assembled with other parts, which leads to connector contact intensity not being properly maintained. In result, the main role of the connector, which is to transmit electric signals, cannot be performed. In order to address this problem, this study conducted bend deformation cause analysis through bend deformation analysis to predict and prevent bend deformation of housings and wafers, which are injection molded products of pressure welded connectors that are normally applied in compact mobile and display products. Bend deformation analysis was carried out by checking the charging time, pressure distribution and temperature distribution through wire to board connector wafer and housing injection molding analysis. Based on the results of the bend deformation analysis results, the cause of the bend deformation was analyzed through deformation resulting from disproportional cooling, deformation resulting from disproportional contraction, and deformation resulting from ingredient orientation. In result, it was judged that the effects for bend deformation were biggest due to disproportional contraction for both the pressure welded connector wafer and housing.

Non-uniform Deblur Algorithm using Gyro Sensor and Different Exposure Image Pair (자이로 센서와 노출시간이 다른 두 장의 영상을 이용한 비균일 디블러 기법)

  • Ryu, Ho-hyeong;Song, Byung Cheol
    • Journal of Broadcast Engineering
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    • v.21 no.2
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    • pp.200-209
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    • 2016
  • This paper proposes a non-uniform de-blur algorithm using IMU sensor and a long/short exposure-time image pair to efficiently remove the blur phenomenon. Conventional blur kernel estimation algorithms using sensor information do not provide acceptable performance due to limitation of sensor performance. In order to overcome such a limitation, we present a kernel refinement step based on images having different exposure times which improves accuracy of the estimated kernel. Also, in order to figure out the phenomenon that conventional non-uniform de-blur algorithms suffer from severe degradation of visual quality in case of large blur kernels, this paper a homography-based residual de-convolution which can minimize quality degradation such as ringing artifacts during de-convolution. Experimental results show that the proposed algorithm is superior to the state-of-the-art methods in terms of subjective as well as objective visual quality.

The Dependence of Type Ia Supernovae Luminosities on the Morphologies of Host-Galaxies

  • Kim, Young-Lo;Kang, Yi-Jung;Joe, Young-Hoon;Lee, Young-Wook
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.2
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    • pp.69.2-69.2
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    • 2011
  • The discovery of dark energy from Type Ia supernovae (SN Ia) is based on the implicit assumption that the look-back time evolution of SN Ia luminosity, after light-curve corrections, would be negligible. A strong support for this assumption was the apparent insensitivity of SN Ia distances across the host galaxy morphologies. However, Hicken et al. 2009 (H09) shows a systematic difference in the Hubble residual (HR) of $0.144{\pm}0.070$ mag between the E-S0 and Scd/Sd/Irr galaxies, after light-curve corrections. If true, this indicates that the light-curve fitters used by the SN Ia community can not correct for the population age (and therefore the evolution) effect. In order to confirm this, we have combined nearby SN Ia samples and the first-year SDSS-II SN Survey. The SNANA package was used for analyzing SN Ia light-curve, both for the MLCS2k2 and SALT2 fitters. We find a systematic difference in the HR of $0.10-0.13{\pm}0.030$ mag between E-S0 and Scd/Sd/Irr galaxies, which is in agreement with the result of H09, but now at the 3-5 ${\sigma}$ level. Considering the significant difference in the mean age of stellar population between these morphological types, the difference in the HR reported here suggests that the evolution effect of SN Ia luminosity should be considered in the cosmological application of SN Ia data.

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$SO_2$ and CO Removal Characteristics in Various Applied Voltage of Nonthermal Discharge Plasma in a Crossed DC Magnetic Field (전.자계상의 전원장치변화에 따른 비열방전 플라즈마의 $SO_2$와 CO가스 제거특성)

  • Lee, Geun-Taek;Geum, Sang-Taek;Mun, Jae-Duk
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.3
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    • pp.215-220
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    • 1999
  • $SO_2$and CO gas removal characteristics of a wire-to-cylinder type nonthermal discharge plasma reactor in various applied voltage (-dc, ac, fast rising pulse and high frequency pulse) and a crossed dc magnetic field have been investigated. The experiment has been emphasized on the oxidizing characteristics of $SO_2$ and CO gas by $O_3$ and the applying of a crossed magnetic field, which would induce the cyclotronic and drift motions of electrons making the residual time longer in the removal airgap space. And it also would enhance the energy of electrons and the electrophysicochemical actions to remove the pollutant gases effectively. It is found thatthe corona onset voltage and the breakdown voltage were decreased with increasing the crossed magnetic field and decrease initial fed $SO_2$and CO concentration. As a result, a higher ozone generation and $SO_2$ and CO gas removal rate of 20[%] can be obtained with -dc, ac and fast rising pulse corona discharges in the crossed dc current-induced magnetic field. But high frequency pulse didn't show effect in applying of a crossed magnetic field.

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A Study on the Outlet Blockage Determination Technology of Conveyor System using Deep Learning

  • Jeong, Eui-Han;Suh, Young-Joo;Kim, Dong-Ju
    • Journal of the Korea Society of Computer and Information
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    • v.25 no.5
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    • pp.11-18
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    • 2020
  • This study proposes a technique for the determination of outlet blockage using deep learning in a conveyor system. The proposed method aims to apply the best model to the actual process, where we train various CNN models for the determination of outlet blockage using images collected by CCTV in an industrial scene. We used the well-known CNN model such as VGGNet, ResNet, DenseNet and NASNet, and used 18,000 images collected by CCTV for model training and performance evaluation. As a experiment result with various models, VGGNet showed the best performance with 99.03% accuracy and 29.05ms processing time, and we confirmed that VGGNet is suitable for the determination of outlet blockage.

Synthesis of Sub-Micron 2SnO·(H2O) Powders Using Chemical Reduction Process and Thermal Calcination (화학적 합성법을 이용한 마이크론 이하급 2SnO·(H2O) 분말의 합성과 하소 특성)

  • Chee, Sang-Soo;Lee, Jong-Hyun
    • Korean Journal of Materials Research
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    • v.23 no.11
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    • pp.631-637
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    • 2013
  • Synthesis of sub-micron $2SnO{\cdot}(H_2O)$ powders by chemical reduction process was performed at room temperature as function of viscosity of methanol solution and molecular weight of PVP (polyvinylpyrrolidone). Tin(II) 2-ethylhexanoate and sodium borohydride were used as the tin precursor and the reducing agent, respectively. Simultaneous calcination and sintering processes were additionally performed by heating the $2SnO{\cdot}(H_2O)$ powders. In the synthesis of the $2SnO{\cdot}(H_2O)$ powders, it was possible to control the powder size using different combinations of the methanol solution viscosity and the PVP molecular weight. The molecular weight of PVP particularly influenced the size of the synthesized $2SnO{\cdot}(H_2O)$ powders. A holding time of 1 hr in air at $500^{\circ}C$ sufficiently transformed the $2SnO{\cdot}(H_2O)$ into $SnO_2$ phase; however, most of the PVP (molecular weight: 1,300,000) surface-capped powders decomposed and was removed after heating for 1 h at $700^{\circ}C$. Hence, heating for 1 h at $500^{\circ}C$ made a porous $SnO_2$ film containing residual PVP, whereas dense $SnO_2$ films with no significant amount of PVP formed after heating for 1 h at $700^{\circ}C$.

Clinical Evaulation of Reoperation for Mitral Vavular Disease (승모판막질환의 재수술에 대한 임상적 고찰)

  • Kim, Myung-In;Kim, Eung-Joong;Lee, Young
    • Journal of Chest Surgery
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    • v.25 no.1
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    • pp.49-56
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    • 1992
  • Total 20 cases of reoperation for mitral vavular disease, which had been performed during the period from May 1983 till October 1991, were reviewed. This study contained 1 case of previous balloon valvuloplasty and 1 case of death with bleeding from right ventricle during sternal reenrty. The average time intervals between reoperation and previous operation was 19 years in closed mitral commissurotomy[n=4], 7 years and 2 months in mitral valve replacement[n=10], 1 year and 8 months in mitral valvuloplasty[n=4], 3 years and 10 months in open mitral commissurotomy [n=2]. The cause of reoperation in closed mitral commissurotomy was progression of the disease, and residual stenosis with progression was the cause in open mitral commissurotomy cases. Technical failure might be the cause in the cases of valvuloplasty. In prosthetic valve replacement group the causes of reoperation were primary failure. Also two cases of suggested valve thrombosis and one case of failure of tricuspid annuloplasty was noted in prosthetic valve replacement group. The used valves for reoperation were Ionescue-Shiley in 3 cases, Bjork-Shiley in 6 cases, St. Jude Medical in 2 cases and CarboMedics in 8 cases. The mortality rate was 20%[n=4] and the causes of death were low output syndrome in 1 case, multiple organ failure in 2 cases and bleeding in 1 case during sternal reentry. During follow up 1 case of sudden death was observed.

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A Molecular Dynamics Study of the Stress Effect on Oxidation Behavior of Silicon Nanowires

  • Kim, Byeong-Hyeon;Kim, Gyu-Bong;Park, Mi-Na;Ma, U-Ru-Di;Lee, Gwang-Ryeol;Jeong, Yong-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.499-499
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    • 2011
  • Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

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Bubbly, Slug, and Annular Two-Phase Flow in Tight-Lattice Subchannels

  • Prasser, Horst-Michael;Bolesch, Christian;Cramer, Kerstin;Ito, Daisuke;Papadopoulos, Petros;Saxena, Abhishek;Zboray, Robert
    • Nuclear Engineering and Technology
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    • v.48 no.4
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    • pp.847-858
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    • 2016
  • An overview is given on the work of the Laboratory of Nuclear Energy Systems at ETH, Zurich (ETHZ) and of the Laboratory of Thermal Hydraulics at Paul Scherrer Institute (PSI), Switzerland on tight-lattice bundles. Two-phase flow in subchannels of a tight triangular lattice was studied experimentally and by computational fluid dynamics simulations. Two adiabatic facilities were used: (1) a vertical channel modeling a pair of neighboring sub-channels; and (2) an arrangement of four subchannels with one subchannel in the center. The first geometry was equipped with two electrical film sensors placed on opposing rod surfaces forming the subchannel gap. They recorded 2D liquid film thickness distributions on a domain of $16{\times}64$ measuring points each, with a time resolution of 10 kHz. In the bubbly and slug flow regime, information on the bubble size, shape, and velocity and the residual liquid film thickness underneath the bubbles were obtained. The second channel was investigated using cold neutron tomography, which allowed the measurement of average liquid film profiles showing the effect of spacer grids with vanes. The results were reproduced by large eddy simulation + volume of fluid. In the outlook, a novel nonadiabatic subchannel experiment is introduced that can be driven to steady-state dryout. A refrigerant is heated by a heavy water circuit, which allows the application of cold neutron tomography.

A Study on Predicting Ship Resistance Performance due to Surface Roughness Using CFD (CFD를 이용한 표면 거칠기에 따른 선박의 저항 성능 추정에 관한 연구)

  • Seok, Jun;Park, Jong-Chun;Shin, Myung-Soo;Kim, Sung-Yong
    • Journal of the Society of Naval Architects of Korea
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    • v.53 no.5
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    • pp.400-409
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    • 2016
  • In recent, shipping companies have made an enormous effort to improve the operation of vessel in various approaches, due to recession of shipping market and increasing competition among shipping companies. One of important parameters for improving the efficiency of vessel is the resistance performance that consist of friction and residual resistance. Especially, it is recognized that the friction resistance tends to be affected by conditions of vessel’s surface and occupies approximately 70~90% of the total resistance for slow speed ships. In general, the surface of vessel is covered with various type of paint to reduce fouling and corrosion. As time goes by, however, it is so hull roughness would be increased by fouling over the wetted surface that anti-fouling paints, such as CDP(Controlled Depletion Paint), Tin-Free SPC(Self Polishing Co-polymer) or Foul Release, are applied evenly on the hull surface. Nevertheless, these anti-fouling paints could not prevent fouling absolutely. A fundamental study on evaluating ship resistance performance variation due to hull roughness has been performed using a commercial software, Star-CCM+, which solves the continuity and Navier-Stokes equations for incompressible and viscous flow. The results of present simulation for plate are compared with some experimental data available and the effect of surface roughness to ship resistance performance is discussed.