• Title/Summary/Keyword: residual phase

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Oxidation Behavior at the Interface between E-beam Coated $ZrO_{2}$-7wt.%$Y_{2}O}_{3}$and Plasma Sprayed CoNiCrAlY (전자빔 코팅 및 플라즈마 용사에 의한 안정화지르코니아/CoNiCrAlY 계면의 산화거동)

  • Choi, Won-Seop;Kim, Young-Do;Jeon, Hyeong-Tag;Kim, Hyon-Tae;Yoon, Kook-Han;Hong, Kyung-Tae;Park, Jong-Ku;Park, Won-Sik
    • Korean Journal of Materials Research
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    • v.8 no.6
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    • pp.538-544
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    • 1998
  • The spallation of a thermal barrier coating layer depends on the formation of brittle spinels. thermal expansion mismatch between ceramic and metal. the phase transformation of a ceramic layer and residual stress of coating layer. In this work. the formation mechanism of oxide scale formed by oxidation treatment at 90$0^{\circ}C$ was investigated in order to verify oxidation behavior at the interface between E-beam coated $Zr0_2$-7wt.% $Y_20_3$ and plasma sprayed CoNiCrAIY. Some elements distributed in the bond coating layer were selectively oxidized after oxidation. At the initial time of oxidation. AI-depletion zone and $\alpha$-$Al_O_3$,O, were formed at the bond coating layer by the AI-outward diffusion. After layer grew until critical thickness. spinels. $Cr_20$, and $C0_2CrO_4$ by outward diffusion of Co. Cr, Ni were formed. It was found that the formation of spinels may be related to the spallation of $Zr0_2$-7wt.% $Y_20_3$ during isothermal oxidation.

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Interfacial Adhesion Energy of Ni-P Electroless-plating Contact for Buried Contact Silicon Solar Cell using 4-point Bending Test System (4점굽힘시험법을 이용한 함몰전극형 Si 태양전지의 무전해 Ni-P 전극 계면 접착력 평가)

  • Kim, Jeong-Kyu;Lee, Eun-Kyung;Kim, Mi-Sung;Lim, Jae-Hong;Lee, Kyu-Hwan;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.55-60
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    • 2012
  • In order to develop electroless-plated Nickel Phosphate (Ni-P) as a contact material for high efficient low-cost silicon solar cells, we evaluated the effect of ambient thermal annealing on the degradation behavior of interfacial adhesion energy between electroless-plated Ni-P and silicon solar cell wafers by applying 4-point bending test method. Measured interfacial adhesion energies decreased from 14.83 to 10.83 J/$m^2$ after annealing at 300 and $600^{\circ}C$, respectively. The X-ray photoelectron spectroscopy analysis suggested that the bonding interface was degraded by environmental residual oxygen, in which the oxidation inhibit the stable formation of Ni silicide phase between electroless-plated Ni-P and silicon interface.

Numerical analysis for heat transfer and pressure drop characteristics of (다양한 배플 인자에 따른 셀-튜브 열교환기의 열전달 및 압력강하 특성에 관한 수치해석)

  • Hou, Rong-Rong;Park, Hyeong-Seon;Yoon, Jun-Kyu;Lim, Jong-Han
    • Journal of Advanced Marine Engineering and Technology
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    • v.38 no.4
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    • pp.367-375
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    • 2014
  • In numbers of kinds of heat exchanger, the shell-tube heat exchanger is the most commonly used type of heat exchanger in the industry field. In order to improve the thermal performance of the heat exchanger, this study was analyzed heat transfer characteristics according to arrangement of baffle and direction of baffle and bump phase of baffle about shell-tube heat exchanger using appropriate SST (Shear Stress Transport) turbulence model for flow separation and boundary layer analysis. As the boundary condition for CFD (Computational Fluid Dynamics) analysis, the inlet temperature of shell side was constantly 344 K and the variation of the water flow rate was 6, 12, 18 and 24 l/min. As the result of analysis, zigzag baffle arrangement enhances heat transfer rate and pressure drop. Furthermore, in the direction of the baffle, heat transfer rate is more improved with vertical type and angle $45^{\circ}$ type than existing type, and pressure drop was little difference. Also, the bump shape of baffle surface contributes to heat transfer rate and pressure drop improvement due to the increased heat transfer area. Through analysis results, we knew that the increase of the heat transfer was influenced by flow separation, fluid residual time, contact area with the tube, flow rate, swirl and so on.

A Study on the compensation margin on butt welding joint of large steel plates in shipyards (조선해양 구조물 주판의 Butt welding joint 수축에 관한 연구)

  • Kim, Jeongtae;Lee, Daechul;Jeong, Hyomin;Chung, Hanshik
    • Journal of Advanced Marine Engineering and Technology
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    • v.37 no.5
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    • pp.461-466
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    • 2013
  • This paper examines the characteristics of butt welding joint shrinkage for shipbuilding and marine structures main plate. The shrinkage strain of butt welding joint which is caused by the process of heat input and cooling, results in the difference between dimensions of the actual parent metal and the dimensions of design. This, in turn, leads to poor quality in the production of ship blocks and reworking through period of correction brings about impediment on improvement of productivity. Through experiments on butt welding joint's shrinkage strain on large structures main plate, the deformation of welding residual stress in the form of I, Y, V was obtained. In addition, the results of experiments indicate that there is limited range of shrinkage in the range of 1 ~ 2 mm in 11t ~ 21.5t thickness and the effect of heat transfer of weld appears to be limited within 1000mm based on one side of seam line so there was limited impact of weight of parent metal on the shrinkage. Finally, it has been learned that Shrinkage margin needs to be applied differently based on groove phenomenon in the design phase in order to minimize shrinkage.

Synthesis and Defect-Structure Analysis of $ThO_2-Tm_2O_3$ Solid Solutions ($ThO_2-Tm_2O_3$ 고용체의 합성 및 결함구조해석)

  • Don Kim;Chang Kwon Kang;Keu Hong Kim;Jae Shi Choi
    • Journal of the Korean Chemical Society
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    • v.31 no.6
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    • pp.491-497
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    • 1987
  • $ThO_2-Tm_2O_3$ (TDT) solid solutions containing 1,3,5,8,10, and 15 mol% $Tm_2O_3$ were synthesized from spectroscopically pure $ThO_2$ and $Tm_2O_3$ polycrystalline powders. The TDT solid solutions were indentified to the fluorite structure by the X-ray powder technique. The values of the lattice parameter were decreased with increasing amount of $Tm_2O_3$ incorporated. But, there was no linearity for the samples containing 8, 10, and 15 mol% $Tm_2O_3$. It was concluded that these samples became incomplete solid solutions. From the intensity analyses of X-ray diffraction patterns, the residual factor was found below 0.13 even for the 15 mol% TDT system. lt was confirmed from the DTA and TGA analyses that any phase transitions did not occur under the experimental condition executed. Comparing the pycnometric density with the lattice parameter obtained from XRD, it was suggested that the predominant defect model be an oxygen vacancy.

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High-Level Expression of T4 Endonuclease V in Insect Cells as Biologically Active Form

  • Kang, Chang-Soo;Son, Seung-Yeol;Bang, In-Seok
    • Journal of Microbiology and Biotechnology
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    • v.16 no.10
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    • pp.1583-1590
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    • 2006
  • T4 endonuclease V (T4 endo V) [EC 3. 1. 25. 1], found in bacteriophage T4, is responsible for excision repair of damaged DNA. The enzyme possesses two activities: a cyclobutane pyrimidine dimer DNA glycosylase (CPD glycosylase) and an apyrimidic/apurinic endonuclease (AP lyase). T4 denV (414 bp cDNA) encoding T4 en do V (138 amino acid) was synthesized and expressed using either an expression vector, pTriEx-4, in E. coli or a baculovirus AcNPV vector, pBacPAK8, in insect cells. The recombinant His-Tag/T4 endo V (rHis-Tag/T4 endo V) protein expressed from bacteria was purified using one-step affinity chromatography with a HiTrap Chelating HP column and used to make rabbit anti-His-Tag/T4 endo V polyclonal antibody for detection of recombinant T4 endo V (rT4 endo V) expressed in insect cells. In the meantime, the recombinant baculovirus was obtained by cotransfection of BacPAK6 viral DNA and pBP/T4 endo V in Spodoptera frugiperda (Sf21) insect cells, and used to infect Sf21 cells to overexpress T4 endo V protein. The level of rT4 endo V protein expressed in Sf21 cells was optimized by varying the virus titers and time course of infection. The optimal expression condition was set as follows; infection of the cells at a MOI of 10 and harvest at 96 h post-infection. Under these conditions, we estimated the amount of rT4 endo V produced in the baculovirus expression vector system to be 125 mg/l. The rT4 endo V was purified to homogeneity by a rapid procedure, consisting of ion-exchange, affinity, and reversed phase chromatographies, based on FPLC. The rT4 endo V positively reacted to an antiserum made against rHis-Tag/T4 endo V and showed a residual nicking activity against CPD-containing DNA caused by UV. This is the first report to have T4 endo V expressed in an insect system to exclude the toxic effect of a bacterial expression system, retaining enzymatic activity.

Investigation of Nonylphenols Contamination in Solvents and Solid-phase Extraction Cartridge, and its Removal Protocols (정밀분석용 용매 및 SPE의 Nonylphenols 오염평가 및 제거)

  • Park, Jong-Min;Choi, Geun-Hyonng;Kim, Jung-Im;Hong, Su-Myeong;Kwon, Oh-Kyung;Im, Geon-Jae;Kim, Jin-Hyo
    • The Korean Journal of Pesticide Science
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    • v.15 no.1
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    • pp.22-27
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    • 2011
  • Nonylphenols are toxic compounds classified as endocrine disruptors. We investigated the nonylphenols clean-up procedures for the contamination control in the quantitative analysis. In this research we analyzed the residual nonylphenols in the solvent and the SPE cartridges. First, at the analysis of HPLC grade solvents (n-hexane, diethyl ether, ethyl acetate and its mixture), diethyl ether was confirmed the residue as 0.963 ${\mu}g/mL$, and we eliminated the contaminant through the distillation with $CaH_2$, Second, at the analysis of SPE cartridges (silica gel and Florisil), all products were showed the residue at 0.046~13.0 ${\mu}g/mL$, but unfortunately the residue in the cartridge were not easily removed with referenced methods in all tested SPE cartridges except in silica gel SPE cartridge with glass ware.

Recovery of phosphoric acid from the waste acids in semiconductor manufacturing process (반도체 제조공정에서 발생하는 혼산폐액으로부터 고순도 인산 회수)

  • Park, Sung-Kook;Roh, Yu-Mi;Lee, Sang-Gil;Kim, Ju-Yup;Shin, Chang-Hoon;Ahn, Jae-Woo
    • Proceedings of the Korean Institute of Resources Recycling Conference
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    • 2006.05a
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    • pp.90-94
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    • 2006
  • The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to removal of impurities to tess than 1ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, we have been clearly established that a mixed system of solvent extraction, diffusion dialysis and ion-exchange technique, which made individually the most of characteristics is developed to commercialize in an efficient system for recovering the high-purity phosphoric acid. By applying vacuum evaporation, the yield of the process are almost 99% removal of nitric acid and acetic acid was achieved. And by applying the solvent extraction method with tri-octyl phosphate(TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio O/A=1/3 with four stages and the stripping of nitric acid from organic phase is attained at a ration of O/A=1 with six stages by distilled water. About 97% and 76% removal of Al and Mo were achieved by diffusion dialysis. Essentially complete less than 1ppm removal of Al, Mo by using ion exchange ion resin and purification of the phosphoric acid was obtain.

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The Effect of Stress on SCC of Heat Exchanger Tube for LNG Vessel (LNG선박용 열교환기 세관의 SCC에 미치는 응력의 영향)

  • Jeong Hae Kyoo;Lim Uh Joh
    • Journal of the Korean Institute of Gas
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    • v.7 no.2 s.19
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    • pp.22-32
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    • 2003
  • Al-brass material is generally used at the state of plastic deformation, for example; bending, extension of bell mouth at shell and tube type heat exchanger. And SCC(stress corrosion cracking) of Al-brass material will be affected by residual stress as plastic deformation. SCC results from synergism between mechanical factor and corrosion environment. Mechanical factor is stress that directly relates with stress intensity factor at the crack tip. This paper was studied on the effect of stress on SCC of Al-brass tube under in $3.5\%$ NaCl. + $0.1\%\;NH_4OH$ solution by constant displacement tester. Increasing of acidified water flow into sea and speeds up corrosion rate of Al-brass which is used as a tube material of vessel heat exchanger by polluted coast seawater. The experimental results are as follow The latent time of SCC occurrence gets longer as the initial stress intensity factor($K_{Ii}$) gets lower The main crack was propagated as the initial stress intensity factor($K_{Ii}$) gets higher, and secondary cracks occurred by electro-chemical factor a(ter stage of released stress. Dezincification phase showed around the crack, and the range of dezincification gets wider as the initial stress intensity factor($K_{Ii}$) gets higher.

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In-situ Observations of Gas Phase Dynamics During Graphene Growth Using Solid-State Carbon Sources

  • Kwon, Tae-Yang;Kwak, Jinsung;Chu, Jae Hwan;Choi, Jae-Kyung;Lee, Mi-Sun;Kim, Sung Youb;Shin, Hyung-Joon;Park, Kibog;Park, Jang-Ung;Kwon, Soon-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.131-131
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    • 2013
  • A single-layer graphene has been uniformly grown on a Cu surface at elevated temperatures by thermally processing a poly(methyl methacrylate) (PMMA) film in a rapid thermal annealing (RTA) system under vacuum. The detailed chemistry of the transition from solid-state carbon to graphene on the catalytic Cu surface was investigated by performing in-situ residual gas analysis while PMMA/Cu-foil samples being heated, in conjunction with interrupted growth studies to reconstruct ex-situ the heating process. The data clearly show that the formation of graphene occurs with hydrocarbon molecules vaporized from PMMA, such as methane and/or methyl radicals, as precursors rather than by the direct graphitization of solid-state carbon. We also found that the temperature for vaporizing hydrocarbon molecules from PMMA and the length of time the gaseous hydrocarbon atmosphere is maintained, which are dependent on both the heating temperature profile and the amount of a solid carbon feedstock are the dominant factors to determine the crystalline quality of the resulting graphene film. Under optimal growth conditions, the PMMA-derived graphene was found to have a carrier (hole) mobility as high as ~2,700 cm2V-1s-1 at room temperature, superior to common graphene converted from solid carbon.

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