• Title/Summary/Keyword: residual layer thickness

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Property of Nickel Silicides with Hydrogenated Amorphous Silicon Thickness Prepared by Low Temperature Process (나노급 수소화된 비정질 실리콘층 두께에 따른 저온형성 니켈실리사이드의 물성 연구)

  • Kim, Jongryul;Choi, Youngyoun;Park, Jongsung;Song, Ohsung
    • Korean Journal of Metals and Materials
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    • v.46 no.11
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    • pp.762-769
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    • 2008
  • Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

Effect of Finite Element Analysis Parameters on Weld Residual Stress of Dissimilar Metal Weld in Nuclear Reactor Piping Nozzles (유한요소 해석변수가 원자로 배관 노즐 이종금속용접부의 용접잔류응력에 미치는 영향)

  • Soh, Na-Hyun;Oh, Gyeong-Jin;Huh, Nam-Su;Lee, Sung-Ho;Park, Heung-Bae;Lee, Seung-Gun;Kim, Jong-Sung;Kim, Yun-Jae
    • Transactions of the Korean Society of Pressure Vessels and Piping
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    • v.8 no.1
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    • pp.8-18
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    • 2012
  • In early constructed nuclear power plants, Ni-based Alloys 82/182 had been widely used for dissimilar metal welds (DMW) as a weld filler metal. However, Alloys 82/182 have been proven to be susceptible to primary water stress corrosion cracking (PWSCC) in the nuclear primary water environment. The formation of crack due to PWSCC is also influenced by weld residual stresses. Thus, the accurate estimation of weld residual stresses of DMW is crucial to investigate the possibility of PWSCC and instability behaviors of crack due to PWSCC. In this context, the present paper investigates weld residual stresses of nuclear reactor piping nozzles based on 2-D axi-symmetric finite element analyses based on layer-based approach using maximum molten bead temperature. In particular, the effect of analysis parameters, i.e., a thickness of weld layer, an initial molten bead temperature, convection heat transfer coefficient, and geometric constraints on predicted weld residual stresses was investigated.

Nondestructive Evaluation of the Characteristics of Degraded Materials Using Backward Radiated Ultrasound

  • Sung D. Kwon;Sung J. Song;Dong H. Bae;Lee, Young Z.
    • Journal of Mechanical Science and Technology
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    • v.16 no.9
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    • pp.1084-1092
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    • 2002
  • The frequency dependency of Rayleigh surface wave is investigated indirectly by measuring the angular dependency of the backward radiation of the incident ultrasonic wave in two kinds of degraded specimens by scuffing or corrosion. Then, the frequency dependency is compared with the residual stress distribution or the corrosion-fatigue characteristics for the scuffed or corroded specimens, respectively. The width of the backward radiation profile increases with the increase of the variation in residual stress distribution for the scuffed specimens. In the corroded specimens, the profile width decreases with the increase of the effective aging layer thickness and is inversely proportional to the exponent, m, in the Paris' law that can predict the crack size increase due to fatigue. The result observed in this study demonstrates high potential of backward radiated ultrasound as a tool for nondestructive evaluation of subsurface gradient of material degradation generated by scuffing or corrosion.

A study on the preparation of phthalocyanine optoelectric thin films (프탈로시아닌계 광전도성 유기박막의 제조에 관한 연구)

  • 박구범;조기선;이덕출
    • Electrical & Electronic Materials
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    • v.7 no.5
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    • pp.409-416
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    • 1994
  • A double layered photoreceptor using phthalocyanine dye was made by dip-coating method. The under cutting layer(UCL) was coated with A1$\_$2/O$\_$3/ or polyamide, and the charge generation layer(CGL) was formed by .tau.-type metal-free phthalocyanine. The oxadiazole was used as a charge transport layer(CTL) and polycarbonate and poly(vinyl butyral) was employed as a host polymer. The .tau.-H$\_$2/Pc had an absorption peak around 780nm, which coincided with the emitting wavelengths of GaAlAs diode lasers. Maximum charge acceptance of CTL that gives thickness of 12.mu.m was -900V by corona charge of -6.0kV. In photo-induced discharge measurements, residual potential was less than -20V and sufficient for ordinary use, and sample films using of poly(vinyl butyral) was showed good charge retention. In printing test, drum that was employed polycarbonate as a host polymer showed the good print quality.

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Endpoint Depth When Removing Xanthelasma Using CO2 Laser Ablation: A Case Report

  • Park, Jeong Do;Kim, Se Young;Jeong, Hyun Gyo;Wee, Syeo Young
    • Medical Lasers
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    • v.10 no.4
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    • pp.246-249
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    • 2021
  • The carbon dioxide (CO2) laser is one of the treatment options used for xanthelasma palpebrarum. However, even if the full dermal layer is removed, the lesion can recur due to the residual lipid deposits. A 44-year-old male patient with xanthelasma on both upper eyelids was treated with a pulsed dye CO2 laser. On the right upper eyelid, we carried out a CO2 laser treatment until the yellowish plaque was almost invisible and the full thickness of the dermal layer was removed. On the left upper eyelid, the dermal layer was partially removed and an additional squeezing out of yellowish particles was done. The lesion treated by the squeezing out of lipid droplets showed better long-term results than the lesion treated up to the deeper dermal layer.

A Study on the Dielectric Characteristics and Microstructure of $Si_3N_4$ Metal-Insulator-Metal Capacitors ($Si_3N_4$를 이용한 금속-유전체-금속 구조 커패시터의 유전 특성 및 미세구조 연구)

  • 서동우;이승윤;강진영
    • Journal of the Korean Vacuum Society
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    • v.9 no.2
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    • pp.162-166
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    • 2000
  • High quality $Si_3N_4$ metal-insulator-metal (MIM) capacitors were realized by plasma enhanced chemical vapor deposition (PECVD). Titanium nitride (TiN) adapted as a diffusion barrier reduced the interfacial reaction between $Si_3N_4$ dielectric layer and aluminum metal electrode showing neither hillock nor observable precipitate along the interface. The capacitance and the current-voltage characteristics of the MIM capacitors showed that the minimum thickness of $Si_3N_4$ layer should be limited to 500 $\AA$ under the present process, below which most of the capacitors were electrically shorted resulting in the devastation of on-wafer yield. According to the transmission electron microscopy (TEM) on the cross-sectional microstructure of the capacitors, the dielectric breakdown was caused by slit-like voids formed at the interface between TiN and $Si_3N_4$ layers when the thickness of $Si_3N_4$ layer was less than 500 $\AA$. Based on the calculation of thermally-induced residual stress, the formation of voids was understood from the mechanistic point of view.

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Experimental Study on the Residual Soil-Grout Interface-shearing Behavior (풍화토-그라우트 인터페이스 전단 거동 특성에 대한 실험적 연구)

  • Shin, Gyu-Beom ;Chung, Choong-Ki;Kim, Inhyun;Jo, Bum-Hee
    • Journal of the Korean Geotechnical Society
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    • v.39 no.4
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    • pp.19-29
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    • 2023
  • This research proposes a direct shear test method to evaluate the behavior of the soil-grout interface. The proposed test method was employed to conduct direct shear tests on two types of specimens: residual soil and residual soil-grout. The evaluation of the shear stress-slip curve indicated that the residual shear strength of residual soil-grout was similar to that of residual soil. It was further confirmed that residual soil determines the behavior of the critical state of the residual soil-grout interface. However, a remarkable increase in the maximum shear strength at the residual soil-grout interface was observed. The increase rate of the maximum shear strength was higher in loose soil due to the increased thickness of the interface layer where residual soil particles and grout particles are mixed.

Analysis of Residual Stresses Induced in Epoxy Coating I on Concrete (콘크리트 보호용 에폭시 코팅층에서 발생하는 잔류응력 해석)

  • 이상순;김노유;박명규
    • Proceedings of the Computational Structural Engineering Institute Conference
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    • 2003.10a
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    • pp.383-388
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    • 2003
  • This paper deals with the singular stresses developed in a polymer coating on concrete due to temperature change. The boundary element method is employed to investigate the behavior of interface stresses. Numerical results show that very large stress gradients are present at the interface comer and such stress singularity dominates a very small region relative to layer thickness. Since the exceedingly large stresses at the interface corner cannot be borne by coating materials, local yielding or delamination can occur in the vicinity of free surface.

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Bolted joints for single-layer structures: numerical analysis of the bending behaviour

  • Lopez-Arancibia, A.;Altuna-Zugasti, A.M.;Aldasoro, H. Aizpurua;Pradera-Mallabiabarrena, A.
    • Structural Engineering and Mechanics
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    • v.56 no.3
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    • pp.355-367
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    • 2015
  • This paper deals with a new designed joint system for single-layer spatial structures. As the stability of these structures is greatly influenced by the joint behaviour, the aim of this paper is the characterization of the joint response in bending through Finite Element Method (FEM) analysis using ABAQUS. The behaviour of the joints studied here was influenced by many geometrical factors, such as bolts and plate sizes, distance between bolts and end-plate thickness. The study comprised five models of joints with different values of those parameters. The numerical results were compared to the results of previous experimental tests and the agreement was good enough. The differences between the numerical and experimental initial stiffness are attributed to the simplifications introduced when modelling the bolt threads as well as the presence of residual stresses in the test specimens.

Preparation and Photo Conducting Characteristics of Plasma Polymerized Organic Photorecepter (플라즈마 중합법에 의한 유기 감광체 박막의 제조와 광전도 특성)

  • 박구범
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.36T no.3
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    • pp.19-25
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    • 1999
  • The photoreceptor films with double layer structure were prepared by the plasma polymerization and the dip-coating method. The blocking layer was coated with A1$_2$O$_3$ on the Al substrate and the charge generation layer was formed by H$_2$ phthalocyanine (H$_2$Pc). Poly 9-Vinylcarbazole was used as a charge transport layer. H$_2$Pc film prepared by the vacuum evaporation had absorption peaks on 613.6[nm] and 694.8[nm], and H$_2$Pc film prepared by the plasma polymerization had a dull peaks between 600 and 700[nm]. The surface potential of PVCz increased with increasing the applied voltage and the thickness of PVCz. The dark decay characteristic, the light decay time and the residual time increased with increasing the thickness of PVCz. The surface charge of PVCz of 15[${\mu}{\textrm}{m}$] thickness was 134[nc/$\textrm{cm}^2$] at the surface potential of -600[V] and the charge generation efficiency of H$_2$Pc was 0.034.

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