• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.304-310
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• 2003

(Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-Bel method, were mixed with organic binder and then BSCT thick films were fabricated by the screen printing techniques on alumina substrates using the BSCT paste. The structural and the dielectric Properties were investigated for various composition ratio and sintering temperature. The second phase appeared in BSCT(40/40/20) thick film sintered at 1450$^{\circ}C$. BSCT thick film thickness, obtained by four printings, was approximately 110∼120$\mu\textrm{m}$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at 1420$^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5㎸/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.402-405
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• 2001

(Ba$\_$0.6-x/Sr$\_$0.4/Ca$\_$x/)TiO$_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and an amount of Al$_2$O$_3$(0.5, 1.0, 1.5, 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an Al$_2$O$_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of Al$_2$O$_3$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% Al$_2$O$_3$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% Al$_2$O$_3$ content.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.296-299
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• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2[hr], respectively. The structural, dielectric and piezoelectric properties with addition of NiO were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of NiO. But the grains of the specimens doped with 0.4wt% NiO were increased, due to deposits of excess NiO at grain boundaries in the liquid phase. Relative dielectric constant and dielectric loss of the specimen doped with 0.1wt% NiO were 701 and 0.026, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.117-120
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• 2004

The dielectric and piezoelectric properties of silver doped $Pb(Zr,Ti)O_3-Pb(Mn,W,Sb,Nb)O_3$ ceramics was examined. By varying the contents of silver(0.0, 0.4, 1.0 mol%), the effect of doped silver on PZT-PMWSN thin film was investigated at various sintering temperature(900, 1000, $1100^{\circ}C$). As increasing silver contents, the relative dielectric constant is increased and sinterbility is enhanced. At the specimen with 0.4 mol% Ag and sintered at $1100^{\circ}C$, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\varepsilon}r$) and dielectric loss were 0.502, 811, 991, 0.006, respectively. The results show that the PZT-PMWSN/Ag composites have enhanced piezoelectic and dielectric properties and processing condition is improved.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.384-389
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• 2004

Crystal structure and microwave dielectric properties of Ba(Mg1/3Nb2/3) $O_3$ (BMN) ceramics were investigated. Ba(Mg1/3Nb2/3) $O_3$ has the 1:2 ordered hexagonal structure. The 1:2 ordering and relative density of specimens increased with small Mg deficiency(x). The variation of Q${\times}$ $f_{0}$ with Mg deficiency is very similar to that of 1:2 ordering and relative density. The highest Q${\times}$ $f_{0}$ achieved in this investigation is about 96,000 for Ba(Mg1/3Nb2/3) $O_3$. The improvement of Q${\times}$ $f_{0}$ with Mg-deficiency is related to the increase of degree of ordering and relative density of the specimen.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.46-50
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• 2003

Crystal structure and microwave dielectric properties of $Ba(Mg_{1/3-x}Nb_{2/3})O_3$ (BMN) ceramics were investigated. $Ba(Mg_{1/3}Nb_{2/3})O_3$ has the 1:2 ordered hexagonal structure. The 1:2 ordering and relative density of specimens increased with small Mg deficiency(x). The variation of Q-value with Mg deficiency is very similar to that of 1:2 ordering and relative density. The highest $Q{\times}f_0$ achieved in this investigation is about 96,000 for $Ba(Mg_{1/3-0.02}Nb_{2/3})O_3$. The improvement of Q-value with Mg-deficiency is related to the increase of degree of ordering and relative density of the specimen.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.581-586
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• 2007

[ $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ ] (BSCT) powders, prepared by sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing method. The structural and dielectric properties were investigated as a function of the $Yb_2O_3$ doping contents. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed the typical XRD patterns of a cubic polycrystalline structure. The average thickness of all BSCT thick films was about $70{\mu}m$. The grain size of the BSCT thick film doped with 0.7 mol% $Yb_2O_3$ was approximately $6.2{\mu}m$. The Curie temperature and relative dielectric constant at room temperature decreased with increasing $Yb_2O_3$ amount. Relative dielectric constant and dielectric loss of the specimen doped with 0.1 mol% $Yb_2O_3$ were 4637 and 19 % at Curie temperature, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권3호
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• pp.97-102
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• 2005

This research was a fundamental study for the low temperature sintering of PZTN by glass phase transient processing. To lower the sintering temperature, the glass phase Processing was used. Also to improve the electrical properties, the transient processing was utilized. After characterization, the various analytic techniques, such as Archimedes method for the measuring densification, x-ray diffraction patterns for the quantitative analysis of crystalline phases were utilized. Also the dielectric constant, dissipation factor, and piezoelectric coefficients were measured to evaluate the PZTN sintered at the $950^{\circ}C$ and $1050^{\circ}C$. This was confirmed that the sintering temperature of PZTN was reduced by $950^{\circ}C$ and the electrical properties were improved by the transition processing. Therefore, the glass phase transient processing can be applicable to low the sintering temperature with the dielectric and piezoelectric properties.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.565-570
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• 2016

In this work, the complex permittivity of epoxy resins is measured. Epoxy resins, epoxy with micro size fillers and epoxy with micro+nano alumina composites have been evaluated for dielectric properties according to frequency variation. The dielectric spectroscopy measurement and analyses are carried out in the frequency range of $10^{-2}Hz$ to 1MHz and constant to room temperature. The results of dielectric loss suggest that significant improvement in the electrical performance can be expected by using samples containing nano and micro fillers mixture when compared to materials containing only microfillers. As the result, we verified the specific characteristics of dielectric permittivity and dielectric loss namely, relative permittivity become low with improving dispersibility of nano+micro mixture composites and become rise with agglomerate of nano particles.

• Journal of Electrical Engineering and Technology
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• 제4권4호
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• pp.527-530
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• 2009

$(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$(=BSCT) powders, prepared by the sol-gel method, were doped using $MnCO_3$ as the acceptor and $Dy_2O_3$ as the donor. This powder was mixed with an organic vehicle. BSCT thick films were fabricated by the screen-printing techniques on the alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of the $Dy_2O_3$ amount. As a result of the differential thermal analysis (DTA), the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with an increasing amount of $Dy_2O_3$. The relative dielectric constant and dielectric loss of the BSCT thick film doped $Dy_2O_3$ 0.1mol% were 4637.4 and 1.6% at 1kHz, respectively.