• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.429-432
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• 1998

The impact of hot carrier induced gate leakage current on the refresh time of memory devices has been examined. The maximum allowable supply voltage for cell transistor has been determined form the degradation of the refresh time. The desing guideline for cell capacitors and refresh circuits has been suggested.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.41 no.4
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• pp.23-30
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• 2004

In MPEG-4 video, Motion Adaptive Intra Refresh (MAIR) encodes a motion area macroblock in intra mode, thereby preventing the error propagation. Motion area is selected by difference of between current macroblock and previous macroblock. An effective implementation of the AIR is to reduce the maximum refresh time and estimate the error prone macroblock. However in the case or the MAIR, unnecessary macroblock can be encoded in intra mode. in this paper, a bitrate AIR is proposed that reduces the maximum refresh time by estimating the error prone macroblock more efficiently.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.2
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• pp.179-185
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• 2020

DRAM is a major component of the main memory system. As the operating system evolves and application complexity and capacity increases, the capacity and speed of DRAM are also increasing. DRAM should perform a refresh action of periodically reading and then re-storing stored values, and the accompanying performance and power/energy overhead embodies characteristics that worsen as capacity increases. This study proposes an energy efficiency improvement technique that efficiently stores the rows that need to be refreshed within 64ms and 128ms using the bloom filter for cells with the lowest retention time of electrons. The results of the experiment showed that the proposed technique resulted in an average 5.5% performance improvement, 76.4% reduction in average refresh energy, and 10.3% reduction in average EDP.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.2
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• pp.117-122
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• 2016

Optimizing the number of ad clicks is a large-scale learning problem that is central to the multi-billion dollar mobile advertising industry. There are currently several optimization methods used, including ad mediation and ad positioning. This paper proposes a new method to optimize mobile advertising by using the ad refresh interval. A new metric, which can measure and compare mobile advertising performance, takes into account time limitations. The results achieved from this optimization study could maximize revenue for mobile advertisers and publishers. This research has high applicability. It also lays out a solid background for future research in this promising area.

• Journal of Korea Multimedia Society
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• v.7 no.12
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• pp.1754-1764
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• 2004

Lately mobile handheld devices such as Personal Digital Assistant (PDA) and cellular phones are getting more popular for personal web surfing. However, today most mobile handheld devices have relatively poor web browsing capability due to their low performance so their users have to suffer longer communication latency than those of desktop Personal Computers (PCs). In this paper, we propose an effective pre-refresh mechanism for embedded web browser of mobile handheld devices to reduce this problem. The proposed mechanism uses the idle time to pre-refresh the expired web objects in an embedded web browser's cache memory. It increases the utilization of Central Processing Unit (CPU) power and network bandwidth during the idle time and consequently reduces the client's latency and web browsing cost. An experiment was done using a simulator designed by us to evaluate the efficacy of the proposed mechanism. The experiment result demonstrates that it has a good performance to make web surfing faster.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.232-234
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• 1996

The self-refresh mode was introduced as method to reduce power dissipation in DRAM. Because the data retention time of DRAM cell decreases as the ambient temperature rises, the internal period in self-refresh mode must be limited by retention capability at the highest temperature in DRAM specification. Because of this, at room temperature($25^{\circ}C$) unnecessary power dissipation happens, If the period of self-refresh could be modulated as temperature, it is possible to reduce the self-refresh current. In this paper, new temperature detector circuit is suggested as this purpose.

• The KIPS Transactions:PartD
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• v.10D no.3
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• pp.387-398
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• 2003

Materialized views have received much attention for query performance improvement. They need to be refreshed whenever their underlying data sources are updated. They could be recomputed from scratch or they could be incrementally refreshed by reflecting only those portions of updates that affect them. With emergence of XML as the standard for data exchange on the Web, active research is under way on effectively storing and retrieving XML documents. In this paper, we describe a performance study on the incremental refresh of XML materialized views for the case where XML documents are stored in a relational DBMS, and XML materialized views are maintained with incremental refresh. We describe implementation of a prototype XML storage system that supports XML materialized views and their incremental refresh, and report the performance results obtained with the implemented system through a detailed set of experiments on the incremental refresh of XML materialized views. The results show that the XML view maintenance with incremental refresh outperforms the ordinary view recomputation.

• The KIPS Transactions:PartC
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• v.11C no.6 s.95
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• pp.815-820
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• 2004

For providing high quality-guaranteed service over Internet, traffic engineering based on an MPLS technology is being introduced. MPLS traffic engineering performs the computation on the path guaranteeing service`s quality and the reservation on network resources by an MPLS signaling protocol. As one of MPLS signaling protocol, RSVP-TE protocol transmits and receives periodic refresh messages for maintaining the path of a traffic flow. Such characteristic gives a heavy processing overhead to routers for maintaining states of large number of paths. In this paper, we propose a scalable implementation approach for RSVP-TE without dramatically increasing processing overhead. And we eval-uate the processing overhead on periodic messages by implementing the RSVP-TE protocol and the reduction mechanism of periodic messages.

• ETRI Journal
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• v.26 no.6
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• pp.583-588
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• 2004

In this paper we investigate the effect of a shield metal line inserted between adjacent bit lines on the refresh time and noise margin in a planar DRAM cell. The DRAM cell consists of an access transistor, which is biased to 2.5V during operation, and an NMOS capacitor having the capacitance of 10fF per unit cell and a cell size of $3.63{\mu}m^2$. We designed a 1Mb DRAM with an open bit-line structure. It appears that the refresh time is increased from 4.5 ms to 12 ms when the shield metal line is inserted. Also, it appears that no failure occurs when $V_{cc}$ is increased from 2.2 V to 3 V during a bump up test, while it fails at 2.8 V without a shield metal line. Raphael simulation reveals that the coupling noise between adjacent bit lines is reduced to 1/24 when a shield metal line is inserted, while total capacitance per bit line is increased only by 10%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.126-129
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• 2006

We investigated an optimized condition of the capacitor threshold voltage implantation(capacitor $V_T$ Implant) in planar P-MOS DRAM Cell. Several samples with different condition of the capacitor $V_T$ Implant were prepared. It appeared that for the capacitor $V_T$ Implant of $BF_2\;2.0{\times}l0^{13}\;cm^{-2}$ 15 KeV, refresh time is three times larger than that of the sample, in which capacitor $V_T$ Implant is in $BF_2\;1.0{\times}l0^{13}\;cm^{-2}$ 15 KeV. Raphael simulation revealed that the lowed maximum electric field and lowed minimum depletion capacitance ($C_{MIN}$) under the capacitor resulted in well refresh characteristics.