• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2001년도 종합학술발표회 논문집 Vol.11 No.1
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• pp.324-327
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• 2001

In this paper, a 24GHz FMCW radar system which measures the range and the relative velocity of a vehicle in close range is described. The intended ranging accuracy is 15cm and a possible system concept to achieve this objective is presented. The VCO nonlinearity correction method using a reference delay-line and the data extrapolation algorithms based on AR(autoregressive) model are applied. The implemented system shows relatively satisfactory results in ranging accuracy.

• 한국멀티미디어학회논문지
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• 제10권8호
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• pp.1004-1016
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• 2007

본 논문에서는 기준신호를 획득하기 어려운 환경에서 환경소음이 정상적인 특성을 가질 경우 음성을 향상시킬 수 있는 가중치 갱신제어 적응소음제거기를 제안하였다. 일반적인 적응소음제거기의 경우 소음만의 기준신호를 획득하여야 한다. 그러나 다수의 기기에 의한 복합적인 소음과 작업자에 의한 음성이 혼합되는 공장 환경에서는 소음발생원들로 부터 순수한 소음신호를 획득하기가 어렵다. 따라서 기준신호를 이용할 수 없기 때문에 이러한 환경에서는 기존의 적응잡음제거기를 사용하기가 어렵다. 제안한 방법에서는 입력신호를 임의의 상수로 하고 기준신호에 마이크로폰의 신호를 입력한다. 그런 다음 음성이 없는 구간에서 적응필터의 가중치를 갱신하여 소음을 제거하고 음성이 발생한 구간에서는 가중치를 고정하여 소음이 제거된 변형 음성신호를 획득한다. 그리고 변형 음성신호를 복원 필터링하여 음성신호를 출력한다. 이것은 다수의 공장소음이 정상적이고 짧은 대화구간에서 소음이 변하지 않는 점을 고려하였다. 실험의 결과 제안한 소음제거기가 공장소음을 효과적으로 제거할 수 있었고 신호 대 잡음비 면에서도 우수함을 확인하였다.

• Journal of information and communication convergence engineering
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• 제7권2호
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• pp.215-218
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• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.89-92
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• 2001

In this paper, a simple low-power CMOS current reference circuit is proposed. The reference circuit includes parasitic pnp BJTs and resistors. Temperature compensation is made by adding a current component proportional to a thermal voltage to a current component proportional to a base-to-emitter voltage. The designed circuit has been simulated using a 0.25${\mu}{\textrm}{m}$ n-well CMOS process parameters. The simulation results show that the reference current is 34.96$mutextrm{A}$$\pm$0.04$mutextrm{A}$ in the temperature range of -2$0^{\circ}C$ to 12$0^{\circ}C$ The reference current varies less than 0.6% when the power supply voltage changes from 2.5V to 3.5V For $V_{DD=5V}$ and T=3$0^{\circ}C$ the power consumption is 520㎼ during normal operation but reduces to 0.l㎻ during power-down mode.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.110-116
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• 2004

We propose a novel sensing scheme, which operates by sensing the difference in voltage between a memory cell and a reference cell for a magneto-resistive random access memory (MRAM). A new midpoint-reference generation circuit is adopted for the reference cell to improve the sensing margin and to guarantee correct operation of sensing circuit for wide range of tunnel magneto resistance (TMR) voltages. In this scheme, the output voltage of the reference cell becomes nearly the midpoint between the cell voltages of high and low states even if the voltage across the magnetic tunnel junction (MTJ) varies.

• 전기학회논문지
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• 제59권2호
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• pp.465-470
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• 2010

The charge pump in a phase-locked loop is a key block in determining reference spurs of the VCO output signal. To reduce reference spurs, the current mismatch in the charge pump must be minimized. This paper presents a dual compensation method to reduce the current mismatch. The proposed charge pump and PLL were realized in a $0.18{\mu}m$ CMOS process. Measured current matching characteristics were achieved with less than 1.4% difference and with the current variation of 3.8% in the pump current over the charge pump output voltage range of 0.35-1.35V at 1.8V. The reference spur of the PLL based on the proposed charge pump was measured to be -71dBc.

• 핵의학기술
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• 제21권2호
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• pp.28-30
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• 2017

본 연구를 통해 항 GAD 항체검사에서 뇌척수액에 대한 정상치 범위를 추정하였다. 본원에서 211명을 대상으로 혈청과 뇌척수액에 대한 항 GAD 항체검사를 함께 의뢰받은 환자 데이터를 분석해 본 결과 혈청은 1.0 U/mL 이상의 값을 가진 환자가 약 5%를 차지하였고. 뇌척수액의 경우에는 1.0 U/mL이상의 값을 가진 환자는 약 98% 이상을 차지하였다. 혈청의 참고치 (1.0 U/mL 이상 양성)를 뇌척수액에 적용했을 경우에는 대부분의 환자들이 강직증후군 및 간질을 진단 받게 된다. 이에 혈청과 뇌척수액의 참고치를 병용해서 사용하는 것은 부적합하다고 판단하였고 뇌척수액에 대한 참고치를 본원에서 자체적으로 설정하고자 하였다. 실험 대상으로는 정상인의 뇌척수액을 채취하는 데는 어려움이 있어 이와 가장 유사한 생리식염수를 음성대조군으로 선정하였다. 총 70개의 생리식염수를 검사한 결과 Mean값이 1.97 U/mL, SD 값이 0.72 U/mL가 나왔다. 이 값들에 Hoffmann법으로 Mean값에서 ${\pm}2SD$를 정상범위로 하여 0.54 U/mL ~ 3.40 U/mL로 Expected reference range를 설정할 수 있었다. 본 실험에서 아쉬운 점은 참고치 설정에 있어 정상인의 뇌척수액으로 검사가 이루어지지 못한 부분이다. 앞으로 정상인의 뇌척수액으로 참고치 설정을 할 수 있다면 보다 더 정확하게 임상적으로 적용할 수 있을 것이라 생각 된다.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.398-403
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• 2006

This paper describes the evaluation of the long duration current impulse withstand characteristics of ZnO blocks for high voltage surge arresters. Four ZnO varistors were manufactured with the general ceramic production method and the long duration current impulse withstand test, electrical uniformity evaluation test and microstructure observation were performed. All varistors exhibited high density, which was in the range of $5.42{\sim}5.46g/cm^3$. In the electrical properties, the reference voltage of samples was in the range of $5.11{\sim}5.25\;kV$ and the residual voltage was in the range of $8.314{\sim}8.523\;kV$. In the long duration current impulse withstand test, sample No.2 and No.3 failed at the 2nd and 4th shot of series impulse currents, respectively, but the rest survived 18 shots during the test. Before and after this test, the variation ratio of the residual voltage of samples survived was below 0.5 %, which was in the acceptance range of 5 %. According to the results of the test, it is thought that if the soldering method is improved, ZnO varistors would be possible to apply to the high voltage arresters like the station class and transmission line arresters in the near future.

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2002년도 Proceedings
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• pp.260-262
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• 2002

An accurate measurement of dose distribution is indispensable to perform radiation therapy planning. A measurement technique using a radiographic film, which is called a film dosimetry, is widely used because it is easy to obtain a dose distribution with a good special resolution. In this study, we tried to develop an analyzing system for the film dosimetry using usual office automation equipments such as a personal computer and an image scanner. A film was sandwiched between two solid water phantom blocks (30 ${\times}$ 30 ${\times}$ 15cm). The film was exposed with Cobalt-60 ${\gamma}$-ray whose beam axis was parallel to the film surface. The density distribution on the exposed film was stored in a personal computer through an image scanner (8bits) and the film density was shown as the digital value with NIH-image software. Isodose curves were obtained from the relationship between the digital value and the absorbed dose calculated from percentage depth dose and absorbed dose at the reference point. The isodose curves were also obtained using an Isodose plotter, for reference. The measurements were carried out for 31cGy (exposure time: 120seconds) and 80cGy (exposure time: 300seconds) at the reference point. While the isodose curves obtained with our system were drawn up to 60% dose range for the case of 80cGy, the isodose curves could be drawn up to 80% dose range for the case of 31cGy. Furthermore, the isodose curves almost agreed with that obtained with the isodose plotter in low dose range. However, further improvement of our system is necessary in high dose range.

• 대한기계학회논문집A
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• 제26권1호
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• pp.131-138
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• 2002

This paper provides the fully plastic J solutions for circumferential cracked pipes with inner, semi- elliptical surface cracks, subject to internal pressure and global bending. Solutions are given in the form of two different approaches, the GEF/EPRl approach and the reference stress approach. For the GE/EPRl approach, the plastic influence functions for fully plastic J are tabulated based on extensive 3-D FE calculations using the Ramberg-Osgood (R-O) materials, covering a wide range of pipe and crack geometries. The developed GEf/EPRl-type fully plastic J estimation equations are then re-formulated using the concept of the reference stress approach for wider applications. Based on the FE results, optimized reference load solutions for the definition of the reference stress are found for internal pressure and for global bending. Advantages of the reference stress based approach over the GE/EPRl-type approach are fully discussed. Validation of the proposed reference stress based J estimation equations will be given in Part II, based on 3-D elastic-plastic or elastic creep FE results using typical tensile properties of stainless steels and generalized creep- deformation behaviours.