• Title/Summary/Keyword: redundant ADC

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Mismatch-tolerant Capacitor Array Structure for Junction-splitting SAR Analog-to-digital Conversion

  • Lee, Youngjoo;Oh, Taehyoun;Park, In-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.387-400
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    • 2017
  • A new junction-splitting based SAR ADC with a redundant searching capacitor array structure in $0.13{\mu}m$ CMOS process to alleviate capacitor mismatch effects, is presented. The normalized average power has a factor of 0.35 to the conventional SAR ADC at 10-bit conversion accuracy. Statistical experiments show the number of missing codes resulting from the mismatch reduces by 95% for 3% unit-capacitor mismatch ratio, while keeping the conversion energy to that of the conventional JS capacitor array.

Digital Error Correction for a 10-Bit Straightforward SAR ADC

  • Rikan, Behnam Samadpoor;Abbasizadeh, Hamed;Do, Sung-Han;Lee, Dong-Soo;Lee, Kang-Yoon
    • IEIE Transactions on Smart Processing and Computing
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    • v.4 no.1
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    • pp.51-58
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    • 2015
  • This paper proposes a 10-b SAR ADC. To increase the conversion speed and reduce the power consumption and area, redundant cycles were implemented digitally in a capacitor DAC. The capacitor DAC algorithm was straightforward switching, which included digital error correction steps. A prototype ADC was implemented in CMOS $0.18-{\mu}m$ technology. This structure consumed $140{\mu}W$ and achieved 59.4-dB SNDR at 1.25MS/s under a 1.8-V supply. The figure of merit (FOM) was 140fJ/conversion-step.

Low Power 10-Bit 10MS/s ADC for Mobile Communication System (무선통신용 저전력 10-Bit 10MS/s ADC)

  • Kim Jun-Ho;Lee Youg-Jic;Kim Joon-Yub
    • 한국정보통신설비학회:학술대회논문집
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    • 2002.08a
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    • pp.27-30
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    • 2002
  • 10-bit 해상도, 10MS/s의 ADC를 Stage 당 1.5-Bit의 Resolution을 가지는 Redundant signed digit(RSD) 방식의 파이프라인 구조를 이용하여 설계하였다. Error Correction Logic을 사용함으로써 비교기를 Coarse하게 설계하였고 잔류 전압 증폭기의 최적 Scaling을 통하여 일반적인 ADC에 비해 성능 저하 없이 효율적으로 소비 전력을 감소시켰다. 또한, Charge Pump의 선택적 사용을 통해 기생 커패시턴스의 영향을 최소화함으로써 잔류전압 증폭기의 출력 전압 특성을 향상 시켰다. 삼성 0.35u CMOS 공정 파라미터를 이용하여 입력 전압 $-1{\sim}1V$, 공급 전압 $-1.5{\sim}1.5V$에서 18.73mW로 설계하였으며 HSPICE로 시뮬레이션 하였다.

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