• Journal of IKEEE
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• v.20 no.1
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• pp.1-8
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• 2016

In this paper, we propose an effective time-of-arrival (TOA)-based localization method with adaptive bias computation in indoor environments. The goal of the localization is to estimate an accurate target's location in wireless localization system. However, in indoor environments, non-line-of-sight (NLOS) errors block the signal propagation between target device and base station. The NLOS errors have significant effects on ranging between two devices for wireless localization. In TOA-based localization, finding the target's location inside the overlapped area in the TOA-circles is difficult. We present an effective localization method using compensated distance with adaptive bias computation. The proposed method is possible for the target's location to estimate an accurate location in the overlapped area using the measured distances with subtracted adaptive bias. Through localization experiments in indoor environments, estimation error is reduced comparing to the conventional localization methods.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• Journal of Labour Economics
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• v.42 no.3
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• pp.39-74
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• 2019

In this paper, the wage equations of local labor markets for college graduates in Korea are estimated by Dahl(2002)'s methodology to correct for selection bias. The results suggest that the variations of coefficients in wage equations across the local labor markets are mostly remained after correcting for selection bias. The gender wage gap is hardly affected by selection bias. The variations of return to education and the major premium are reduced about 18% and 11% respectively. Meanwhile, the selection bias is negligible in the national capital region, which suggests that college graduates prefer the national capital region regardless of their gender, level of education, and major.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.204.1-204.1
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• 2015

We studied the electrical properties and gate bias stress (GBS) stability of thin film transistors (TFTs) with multi-stacked InZnO layers. The InZnO TFTs were fabricated via solution process and the In:Zn molar ratio was 1:1. As the number of InZnO layers was increased, the mobility and the subthreshold swing (S.S) were improved, and the threshold voltage of TFT was reduced. The TFT with three-layered InZnO showed high mobility of $21.2cm^2/Vs$ and S.S of 0.54 V/decade compared the single-layered InZnO TFT with $4.6cm^2/Vs$ and 0.71 V/decade. The three-layered InZnO TFTs were relatively unstable under negative bias stress (NBS), but showed good stability under positive bias stress (PBS).

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1502-1504
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• 1996

The effects of electrical stress in hydrogen passivated and as-fabricated poly-Si TFT's are investigated. It is observed that the charge trapping in the gate dielectric is the dominant degradation mechanism in poly-Si TFT's which has been stressed by the gate bias alone while the creation of defects in the poly-Si film is prevalent in gate and drain bias stressed devices. The degradation due to the gate bias stress is dramatically reduced with hydrogenation time while the degradation due to the gate and drain bias stress is increased a little. From the experimental results, it is considered that hydrogenation suppress the charge trapping at gate dielectrics as well as improve the characteristics of poly-Si TFT's.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.493-498
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• 2005

Al doped Zinc Oxide, which is widely used as a transparent conductor in opto-electronic devices. In this paper, we find that the lateral variations of the parameters of the ZnO:Al films prepared by the rf magnetron sputtering can be reduced to acceptable levels by optimising the deposition parameters. The effect of bias voltage on the electrical, optical and morphological properties were investigated experimentally. we investigated sample properties of Bias Voltage change in 0 to 50 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.9
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• pp.924-931
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• 2002

In this paper, a new λ/4 bias transmission line that is added dumbbell-shaped defected ground structure(DGS) on ground plane of the conventional λ/4 bias transmission line is proposed. This DGS λ/4 bias transmission line maintains high characteristic impedance, but physical width is wider and length is shorter than that of the conventional bias line. If the proposed bias line is attached on signal transmission line, this bias line can reduces the $3^{rd}$ harmonic signal as well as the$2^{nd}$ harmonic signal. With harmonic reduction characteristics, efficiency and linearity of amplifier are improved. The proposed bias line is adopted in power amplifier on IMT-2000 base-station transmitting band. This paper presents several simulations and experimental results of DGS to show validity of the proposed power amplifier using the new λ/4 bias transmission line. Experimental results represent that the $3^{rd}$ harmonic signal is reduced about 26.5 dB and efficiency is improved about 9.1 % and IMD3 is improved 4.5 dB than the conventional structure.

• KIPS Transactions on Software and Data Engineering
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• v.10 no.1
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• pp.1-8
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• 2021

In the political field of news articles, there are polarized and biased characteristics such as conservative and liberal, which is called political bias. We constructed keyword-based dataset to classify bias of news articles. Most embedding researches represent a sentence with sequence of morphemes. In our work, we expect that the number of unknown tokens will be reduced if the sentences are constituted by subwords that are segmented by the language model. We propose a document embedding model with subword tokenization and apply this model to SVM and feedforward neural network structure to classify the political bias. As a result of comparing the performance of the document embedding model with morphological analysis, the document embedding model with subwords showed the highest accuracy at 78.22%. It was confirmed that the number of unknown tokens was reduced by subword tokenization. Using the best performance embedding model in our bias classification task, we extract the keywords based on politicians. The bias of keywords was verified by the average similarity with the vector of politicians from each political tendency.

• The Journal of the Acoustical Society of Korea
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• v.20 no.7
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• pp.94-100
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• 2001

When using a sample covariance matrix data in paucity of snapshots, adaptive matched field processing will have problem in inverting covariance matrix due to the rank deficiency. The general solutions are diagonal loading and eigenanalysis methods, but there is a significant bias in the power output. This paper presents a quantitative study of bias of power output and the performance of source localization through the simulation and the measured data analysis in fixed source case using the diagonal loading method for the minimum variance processor. Results show that the bias in power output is reduced and the performance of source localization is improved when the number of snapshots is greater than the number of array sensors.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.12B
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• pp.2292-2297
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• 1999

Some observed weather spectra show that nearly 25% of weather spectra are seriously skewed and can not be considered to be symmetric. However, the conventional pulse pair method was derived and has been evaluated under the assumption that the weather spectrum is symmetric and narrow. This means that the conventional pulse pair method may need reevaluation. Therefore, this paper analyzed the bias errors of pulse pair estimates in the skewed spectra. The bias errors of pulse pair mean estimates are more serious comparing with the pulse pair width estimates. In this paper, the poly-pulse pair method is suggested to reduce these bias errors of mean estimates. It was shown that the mean bias errors can be reduced remarkably using the newly suggested poly-pulse pair method.