• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.62-66
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• 2008

We report on the growth mechanism of vertically aligned carbon nanotubes (VACNTs) using ultra thin Ni catalysts and direct current plasma enhanced chemical vapor deposition (PECVD) system. The CNTs were grown with -600 V bias to substrate electrode and catalyst thickness variation of 0.07 nm to 3 nm. The CNT density was reduced with catalyst thickness reduction and increased growth time. Cone like CNTs were grown with ultra thin Ni thickness, and it results from an etch of carbon network by reactive etchant species and continuous carbon precipitation on CNT walls. Vertically aligned sparse CNTs can be grown with ultra thin Ni catalyst.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.3
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• pp.34-42
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• 1993

An analytic approach to wide-band amplification using simplified equivalent MESFET modeling has enabled an ultrabroad-band flat-gain amplifier from DC to microwave. The developed lossy-match ultrabroad-band amplifier operates as a RC coupled circuit in the low-frequency range and lossless impedance matching circuit in the microwave frequency range with gain compensation circuits. The reduced gain caused by external resistors is compensated using 2-stage cascade amplification, and the gain of designed unit is 12.5.+-.1dB from the vicinity of DC to 7GAz. The experimental gain characteristics are good agreement with computer simulated results. The input and output VSWRs are measured under 2:1 over the operating frequency range, and the gain goes down over 15dBrange with various gate bias voltages.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.12
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• pp.20-27
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• 1997

In this paper, a multiplying digital-to-analog converter (MDAC) circuit for low-power high-resolution CMOS algorithmic A/D converters (ADC's) is proposed. The proposed MDAC is designed to operte properly at a supply at a supply voltge between 3 V and 5 V and employs an analog0domain power reduction technique based on a bias switching circuit so that the total power consumption can be optimized. As metal-to-metal capacitors are implemented as frequency compensation capacitors, opamps' performance can be varied by imperfect process control. The MDAC minimizes the effects by the circuit performance variations with on-chip tuning circuits. The proposed low-power MDAC is implementd as a sub-block of a 10-bit 200kHz algorithmic ADC using a 0.6 um single-poly double-metal n-well CMOS technology. With the power-reduction technique enabled, the power consumption of the experimental ADC is reduced from 11mW to 7mW at a 3.3V supply voltage and the power reduction ratio of 36% is achieved.

• 전기의세계
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• v.28 no.9
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• pp.43-50
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• 1979

Silicon nitride films were chemically deposited on silicon substrates by reacting SiCl$_{4}$ and NH$_{3}$ in a nitrogen atmosphere at 700~1100 .deg.C. The deposition rate increased rapidly with deposition temperature upto about 1000 .deg.C, and became less temperature dependent above this temperature. The etch rate of films in buffered HF solution decreased, with an increase of deposition temperature, and a heat treatment at a temperature higher than that of the deposition considerably reduced the etch rate. It indicates that the heat treatment resulted in a densification of the films. Surface charge density of 3~4 * 10$^{11}$ /cm$^{2}$ was determined from the C-V characteristics of MNS diode, and it was also found that surface charge density depended on deposition temperature, but not film thickness. The current-voltage characteristics displayed a logI-V$^{1}$2/ dependence in the temperature range of 300~500.deg.K. Measurement of the slope of this characteristics and its dependence on temperature and bias polarity suggest that conduction in sili con nitride films arises from the Poole-Frenkel mechanism.

• Proceedings of the KIEE Conference
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• 2003.07d
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• pp.2088-2090
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• 2003

A practical recursive weighted least square(WLS) solution is proposed to solve the passive ranging problem. Apart from the previous works based on the extended Kalman filter(EKF), to ensure the convergency at long-range, the proposed scheme makes use of line-of-sight(LOS) rate instead of bearing information. The influence of LOS rate measurement errors is investigated and it is asserted that the WLS estimates contain bias and scale factor errors. Together with simple compensation algorithm, the estimation errors of proposed filter can be reduced dramatically.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.4
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• pp.871-876
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• 2011

In this paper, a voltage-controlled frequency tunable current-mode integrator and a 3rd-order current-mode Chebyshev filter in 1.8V-$0.18{\mu}m$ CMOS is realized for software radio applications in system-on-chips. This filter is used for reconstruction purposes between a current-steering DAC and a current-mode mixer. Power consumption of the designed filter can be reduced by using a current-mode small size integrator. And also, cutoff frequency of this filter is variable between 1.2MHz and 10.1MHz, the power consumption is 2.85mW. And the voltage bias compensated circuit is used to control the voltage variation.in the designed filter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.17-19
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• 2004

The electrical properties of gate oxides grown in two different processes, which are in 10% nitrous oxide($N_2O$) and in dry oxygen, have been experimentally investigated and compared. It has been observed that the $SiC-SiO_2$ interface-trap density(Dit) measured in nitrided gate oxide has been tremendously reduced, compared to the density obtained from gate oxide grown in dry oxygen. The beneficial effects of nitridation on gate oxides also have been demonstrated in the values of total near interface-trap density and of forward-bias breakdown field. The reasons of these improvements have been explained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.23-25
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• 2005

Infrared bolometer sensor's variation is detected by voltage drop between reference resistor and bolometer resistor in this architecture. One of the serious problems in this architecture is that these resistors value has a process variation. So common-mode level could be different from expectation in room temperature. Different common-mode level could lead to wrong output at the end of readout circuit. We suggest useful method to solve this problem. Difference correction using capacitor has reduced CM level difference to 86% for 1 $M\Omega$. bolometer and reference resistor's 10% variation.

• Communications for Statistical Applications and Methods
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• v.15 no.3
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• pp.333-342
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• 2008

Variable selection theorem in the linear regression model is extended to the analysis of covariance model. When some of regression variables are omitted from the model, it reduces the variance of the estimators but introduces bias. Thus an appropriate balance between a biased model and one with large variances is recommended.

• Korean Journal of Remote Sensing
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• v.10 no.1
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• pp.55-67
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• 1994

The International TOVS(TIROS Oprational Vertical Sounders) Process Package(ITPP-VI)is for a global usage, which needs a surface data to generate atmospheric soundings. If the initial input process in the ITPP-VI is not modified, it takes climatic surface data for producing sounding data in general. Korea Meteorological Administration(KMA) is trying to improve the quality of TOVS sounding data using real-time synoptic observations and make a use weather prediction and analysis in various ways. Serval cases in this study show that TOVS retrieved meteolorogical parameters such as atmopheric temperature, dew point depression and geopotential heights used by synoptic surface observations can delineate more detailed atmospheric feature rather than those used by climate surface data. In addition, the collocated comparisons of TOVS synoptic retrieved parameters with radiosonde observations are performed statistically. TOVS retrieved fields with the synoptic surface analyzed data show smaller bias reatively than those with the climatic data and also reduced root mean square differences below 700 hPa as expected.