• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1022-1025
• /
• 2008

To the best of our knowledge, for the first time, we applied impedance spectroscopy to analysis on OLED degradation mechanism by monitoring impedance change during constant voltage aging, and modeling OLED with lumped circuit elements. Change in each element value was used to explain charge accumulation and field redistribution in each organic layer.

• Journal of the Korean Vacuum Society
• /
• v.1 no.1
• /
• pp.206-211
• /
• 1992

SIMOX SOI structures were formed by oxygen ion implantation with a dose of 2 1018 ions/cm2 at 180kev and post-implantation annealing at $1250^{\circ}C$ for 6 hours in nitrogen ambient. The oxygen redistribution process during post-implantation annealing was examined by AES and TEM. The electrical property of the structure was investigated by SRP method. We could find oxygen precipitates in SOI layer was discussed. And the limiting factor to the decrease of the precipitates during post-implantation annealing was discussed also.

• Proceedings of the Korean Geotechical Society Conference
• /
• 2001.06a
• /
• pp.21-31
• /
• 2001

The last 30 years have been significant worldwide growth in the use of EPS as a lightweight fill material. A new construction method was introduced, which reduces earth pressure acting on culvert and conduit by placing a thin layer of EPS. This paper analyzes the compressible inclusion function of EPS and geogrid which can results in reduction of earth pressure by arching that is the behaviour of soil-structure system involving redistribution of soil stress around the structure. Field test was conducted to evaluate the reduction of vertical earth pressure using EPS and geogrid inclusion. Based on field test it is found that the magnitude of reduced vertical earth pressure was about 24~50% compared to conventional method.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.1
• /
• pp.37-43
• /
• 2020

The effects of O₂ plasma pre-treatment and post-annealing conditions on the interfacial adhesion of Ti thin film and WPR dielectric were investigated using 90° peel test for fan-out wafer level packaging (FOWLP) redistribution layer (RDL) applications. Peel strength between Ti film and WPR dielectric decreased from 8.9±1.3 g/mm to 2.7±0.9 g/mm for variation of O₂ plasma pre-treatment time from 30s to 300s, which is closely related to C-O-C or C=O bonds breakage at the WPR dielectric surface due to excessive plasma pre-treatment conditions. During post-annealing at 150℃, the peel strength abruptly decreased from 0 h to 24 h, and then maintained constant until 100 h, which is also mainly due to the damage of WPR dielectric which is weak to high temperature. Therefore, the optimum plasma pre-treatment conditions on the surface of dielectric is essential to interfacial reliability of FOWLP RDL.

• Journal of the Microelectronics and Packaging Society
• /
• v.13 no.4
• /
• pp.1-7
• /
• 2006

A major failure mode for wafer level chip size package (WLCSP) is thermo-mechanical fatigue of solder joints. The mechanical strains and stresses generated by the coefficient of thermal expansion (CTE) mismatch between the die and printed circuit board (PCB) are usually the driving force for fatigue crack initiation and propagation to failure. In a WLCSP process peripheral or central bond pads from the die are redistributed into an area away using an insulating polymer layer and a redistribution metal layer, and the insulating polymer layer affects solder joints reliability by absorption of stresses generated by CTE mismatch. In this study, several insulating polymer materials were applied to WLCSP to investigate the effect of insulating material. It was found that the effect of property of insulating material on WLCSP reliability was altered with a solder ball layout of package.

• Proceedings of the KIEE Conference
• /
• 1992.07b
• /
• pp.835-838
• /
• 1992

The $TiN/TiSi_2$ bilayer has been studied for contact barrier layer at ULSI recently. The $TiN/TiSi_2$ bilayer was formed by RTA in $NH_3$ ambient simultaneously after the Ti film was deposited on silicon substrate. In this paper, properties of $TiN/TiSi_2$ bilayer was evaluated according to $BF_2$ dopant concentration and dopant redistribution in $TiN/TiSi_2$ bilayer was also analyzed. In this experiment, the composition and structure of $TiN/TiSi_2$ bilayer were constant even though dopant concentration increased but silicide growth rate decreased. Boron atoms were redistributed within TiN film and at $TiSi_2Si$ interface during the bilayer formation.

• Magazine of the Korean Society of Agricultural Engineers
• /
• v.32 no.3
• /
• pp.79-86
• /
• 1990

Based on limited number of tests on reinforced wood beams using polymer mortar in this study, following conclusions were drawn ; 1.Reinforcing compression side of wood beam using polymer mortar was effective in reducing deflection. 2.By increasing thickness of polymer mortar, effective beam stiffness was improved, but energy absorption was reduced. 3.Polymer mortar reinforcement improved compressive strength and reduced strain in compression side of the beam. Therefore, it was possible to change the failure mode from by compression in control beam to by tension in composite beams. 4.The composite beams that have more than 2cm of polymer mortar layer did not perform well because a strain redistribution and separation of meterials at interface were induced in moment span. 5.To maximize the load carrying capacity of composite beam, it is necessary to make polymer mortar and wood behave together without failing at interface. To do this, it is needed to use a polymer mortar which has high strength with such elastic modulus that is closer to elastic modulus of wood. otherwise, it is recommended to use shear connectors at interface to prevent separation of materials under ultimate load.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.6
• /
• pp.37-45
• /
• 1998

In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

• Progress in Superconductivity
• /
• v.13 no.3
• /
• pp.169-177
• /
• 2012

Distribution of the local properties in GdBCO and YBCO coated conductors was investigated using Low-temperature Scanning Laser and Hall Probe Microscopy (LTSLHPM). We prepared GdBCO and YBCO coated conductors to study the spatial distribution of the current density in a single bridge. Inhomogeneity of the ${T_c}^{max}$ in the bridge was analyzed from experimental results of Scanning Laser Microscopy (SLM) near the superconducting transition. The local transport and screening current in the bridge were also investigated using Scanning Hall Probe Microscopy (SHPM). A series of line scans of SLM of the GdBCO and YBCO sample showed that lines with more inhomogeneous distributions of ${\delta}V$ had more inhomogeneous distributions of ${T_c}^{max}$. The defect of the superconducting layer of the GdBCO sample caused by damage to the substrate affected the current flow. And we could analyze the redistribution of the current density using SLM and SHPM.

• Journal of Magnetics
• /
• v.10 no.4
• /
• pp.137-141
• /
• 2005

We confirmed that the improvement in properties of magnetic tunnel junctions prepared by radical oxidation after thermal treatment was mostly resulted from the redistribution of oxygen at the $AIOx/Co_{90}Fe_{10}$ interface. The as-deposited Al oxide barrier was oxygen-deficient but most of it re-oxidized into $Al_2O_3$, the thermodynamically stable stoichiometric phase, through thermal treatment. As a result, the effective barrier height was increased from 1.52 eV to 2.27 eV. On the other hand, the effective barrier width was decreased from 8.2 ${\AA}$ to 7.5 ${\AA}$. X-ray absorption spectra of Fe and Co clearly showed that the oxygen in the CoFe layer diffused back into the Al barrier and thereby enriched the barrier to close to a stoichiometirc $Al_2O_3$ phase. The oxygen bonded with Co and Fe diffused back by 6.8 ${\AA}$ and 4.5 ${\AA}$ after thermal treatment, respectively. Our results confirm that controlling the chemical structures of the interface is important to improve the properties of magnetic tunnel junctions.