• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.67-70
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• 2000

In this paper, all SCR recombination currents including setback and graded layer's recombination currents are analytically introduced for the first time. Different emitter-base structures are tested to prove the validity of the model. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. In this paper, recombination current model included setback layer and graded layer is proposed. New recombination current model also includes abrupt heterojunction's recombination current model. In this paper, new recombination current model analytically explains effects of setback layer and graded layer.

• 전자공학회논문지A
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• 제29A권9호
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• pp.56-64
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• 1992

Because of a small bandgap energy, a high doping density, and a low operating temperature, the dark current in HgCdTe photodiode is almost composed of a tunneling current. The tunneling current is devided into an indirect tunneling current via traps and a band-to-band direct tunneling current. The indirect tunneling current dominates the dark current for a relatively high temperature and a low reverse bias and forward bias. For a low temperature and a high reverse bias the direct tunneling current dominates. In this paper, to verify the tunneling currents in HgCdTe photodiode, the new tunneling-recombination equation via trap is introduced and tunneling-recombination current is calculated. The new tunneling-recombination equation via trap have the same form as SRH (Shockley-Read-Hall) generation-recombination equation and the tunneling effect is included in recombination times in this equation. Chakrabory and Biswas's equation being introduced, band to band direct tunneling current are calculated. By using these equations, HgCdTe (mole fraction, 0.29 and 0.222) photodiodes are analyzed. Then the temperature dependence of the tunneling-recombination current via trap and band to band direct tunneling current are shown and it can be known what is dominant current according to the applied bias at athe special temperature.

• 태양에너지
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• 제8권2호
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• pp.12-18
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• 1988

The effect of surface recombination current density on the saturation current density in Si solar cell has been studied. Theoretical model for surface recombination current was set up from emitter transparent model of M.A. Shibib, and saturation current of Si solar cell made by ion implantation method was also measured by digital electrometer. The theoretical surface recombination current density which is the same as saturation surface recombination current density in Shibib model was $10^{-11}[A/cm^2]$ and the measured value was ranged from $8{\times}10^{-10}$ to $2{\times}10^{-9}[A/cm^2]$. Comparing with the ideal p-n junction of Shockley, transparent emitter model shows improved result by $10^2$ order of saturation current density. But there still exists $10^2$ order of difference of saturation current density between theoretical and actual values, which are assumed to be caused by 1) leakage current through solar cell edge, 2) recombination of carriers in the depletion layer, 3) the series resistance effect and 4) the tunneling of carriers between states in the band gap.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.232-242
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• 2015

Analytical study of surface recombination at the $Si/SiO_2$ interface is carried out in order to set the optimum surface conditions that result in minimum dark base current and maximum open circuit voltage in silicon solar cells. Recombination centers are assumed to form a continuum rather than to be at a single energy level in the energy gap. It is shown that the presence of a hump in the dark I-V characteristics of high efficiency PERL cells is due to the dark current transition from a high surface recombination regime at low voltage to a low surface recombination regime at high voltage. Successful fitting of reported dark I-V characteristics of a typical PERL cell is obtained with several possible combinations of surface parameters including equal electron and hole capture cross sections.

• Current Photovoltaic Research
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• 제9권1호
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• pp.6-10
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• 2021

The mesh mask screen, which is generally used for screen printing metallization of silicon solar cell, requires high squeegee pressure and low printing speed. These requirements are acting as a limiting factor in production yield in photovoltaic industries. In order to improve the productivity, a metal mask, which has high durability and high printing speed, has been researched. In this paper, the characteristics of each solar cell, in which electrodes were formed by using a metal mask and a mesh mask, were analyzed through recombination current density. In particular, the metal-induced recombination current density (Jom) representing the recombination of the emitter-metal interface was calculated using the shading method, and the resulting efficiency and open-circuit voltage were analyzed through the diode equation. As a result of analyzing the proportion of the metal-induced recombination current density to the total emitter recombination current density, it was analyzed that the reduction of the metal-induced recombination current density through the metal mask is an important factor in reducing the total recombination current density of the solar cell.

• 전자공학회논문지A
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• 제29A권8호
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• pp.71-77
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• 1992

According to increasing the doping concentration in p-n junction, a tunneling current through trap as well as SRH(Shockley-Read-Hall) generation-recombination current in depletion region occurs. It is the tunneling current that is a dominant current at the forward bias. In this paper, the new tunneling-recombination equation is derived. The thermal generation-recombination current and tunneling current though trap can be easily calculated at the same time because this equation has the same form as the SRH generation-recombination equation. For the validity of this equation, 2 kind of samples are simulated. The one is $n^{+}$-p junction device fabricated with MCT(Mercury Cadmium Telluride, mole fraction=0.29), the other Si n$^{+}-p^{+}$ junction. From the results for MCT $n^{+}$-p junction device and comparing the simulated and expermental I-V characteristics for Si n$^{+}-p^{+}$ junction, it is shown that this equation is a good description for tunneling through trap and thermal generation-recombination current calculation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.63-66
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• 2000

In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

• 전자공학회논문지A
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• 제33A권12호
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• pp.83-89
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• 1996

The electrochemical spike oscillations at the nickel (Ni) electrode/(0.05M KHC$_{8}$H$_{4}$O$_{4}$) buffer solution (pH 9) interface have been studied using voltammetric and chronoamperometric methods. The nature of the periodic cathodic current spikes is the activation controlled currents due to the hydrogen evolution reaction and depends onthe fractioanl surface coverage of the adsorbed hydrogen intermediate or the cathodic potential. There is two kinds of the waveforms corresponding to two kinds of the cathodic current spike oscillations. The widths, periods, and amplitudes of the cathodic current spikes are 4 ms or 5ms, 151 ms or 302 ms, and < 30 mA or < 275 mA, respectively. The fast discharge and recombination reaction steps are 1.5 times and twice and faster than the slow discharge and recombination reaction steps. The fast and slow discharge and recombination reaction steps are 1.5 times and twice faster than the slow discharge and recombination reaction steps. The fast and slow discharge and recombination reactions corresponding to the fast and slow adsorption sites at the Ni cathode.

• 전자공학회논문지D
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• 제35D권3호
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• pp.11-17
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• 1998

Although GaAs HBTs are very attractive for high power amplifier because of their power handling capablity, they can't be actively commercialized due to the degradation of current gain occured in hihg current operation. In this paper we analyzed the type of current gain degradation of GaAs HBTs under high constant current stress, and identified the mechanism by using two dimensional numerical simulation. The cause of degradation was found out to be the variation of surface recombination states at the interface between GaAs extrinstic base and the nitride passivating the surface of base. The energy radiated from recombination of carriers in bulk as well as near the surface is estimated to activate the change of the surface states.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.541-543
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• 1995

We propose the improved threshold current ratio method to determine the reflectivity of coated facets. The carrier recombination time used in the improved threshold current ratio method depends on the value of facet reflectivities. However, the carrier recombination time used in the conventional threshold current ratio method is constant regardless of facet reflectivities. The difference between the results of the two methods increases as the reflectivity of a coated facet decreases.