• Wind and Structures
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• v.36 no.2
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• pp.105-120
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• 2023

The present study is performed to find the effect of corner recession on a square plan-shaped tall building. A series of numerical simulations have been carried out to find the two orthogonal wind force coefficients on various model configurations using Computational Fluid Dynamics (CFD). Numerical analyses are performed by using ANSYS-CFX (k-ℇ turbulence model) considering the length scale of 1:300. The study is performed for 0° to 360° wind angle of attack. The CFD data thus generated is utilised to fit parametric equations to predict alongwind and crosswind force coefficients, C_fx and C_fy. The precision of the parametric equations is validated by employing a wind tunnel study for the 40% corner recession model, and an excellent match is observed. Upon satisfactory validation, the parametric equations are further used to carry out multiobjective optimization considering two orthogonal force coefficients. Pareto optimal design results are presented to propose suitable percentages of corner recession for the study building. The optimization is based on reducing the alongwind and crosswind forces simultaneously to enhance the aerodynamic performance of the building.

• Archives of Plastic Surgery
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• v.34 no.5
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• pp.635-640
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• 2007

Purpose: Mid and lower facial convexity is more common in Oriental people than in Caucasian. Bimaxillary dentoalveolar protrusion is characterized by procumbent teeth, protruding lips, acute nasolabial angle, gummy smile, receding chin, facial convexity. Especially, pure maxillary dentoalveolar protrusion is less frequent than bimaxillary dentoalveolar protrusion. Therefore, it is important to make an accurate decision for the operation throughout the history taking, cephalogram, dental cast to arrive at accurate diagnosis and surgical plan. Methods: From December 2002 to June 2004, ten patients with maxillary dentoalveolar protrusion and microgenia were corrected by maxillary anterior segmental osteotomy and advancement genioplasty. 10 patients were analyzed by preoperative and postoperative clinical photography, posteroanterior and lateral cephalograms. Results: No major complications were occurred throughout the follow-up period except one of the over-recessed, otherwise most of the patients were satisfied with the result. Conclusion: We could correct the occulusal relationship with teeth and improve lower facial profile, asthetically and functionally, by maxillary anterior segmental osteotomy and advancement genioplasty.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.335-340
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• 2013

This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.25 no.3
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• pp.150-159
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• 2015

An experimental study on frequency characteristics of the microphone array covered with Kevlar sheet was conducted in the closed test section. Microphones that were flush-mounted in the wall of wind tunnel were subjected to very high flow noise resulting from the turbulence in the wall boundary layer. This noise interference by the boundary layer was referred as 'a microphone self-noise' and various approaches were studied to reduce this interference. Recessed microphone array with high tensioned cover was one of the good approaches to reduce this self-noise. But, the array cover could cause an unexpected interference to the measuring results. In this paper the frequency characteristics of the microphone array with Kevlar cover was experimentally studied. The white noise was used as a reference noise source. Three kinds of tensions for the Kevlar cover were tested and those results were compared with the test results without the Kevlar cover. The gap effect between the cover and microphone head was also tested to find out the proper position of microphone in the array module. Test results show that the mid-tension and 10mm gap was the best choice in the tested cases.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.21-28
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• 1999

A new method of making high speed self-aligned ESD (Elevated Source/Drain) MOSFET is proposed. Different from the conventional LDD (Lightly-Doped Drain) structure, the proposed ESD structure needs only one ion implantation step for the source/drain junctions, and makes it possible to modify the depth of the recessed channel by use of dry etching process. This structure alleviates hot-carrier stress by use of removable nitride sidewall spacers. Furthermore, the inverted sidewall spacers are used as a self-aligning mask to solve the self-align problem. Simulation results show that the impact ionization rate ($I_{SUB}/I_{D}$) is reduced and DIBL (Drain Induced Barrier Lowering) characteristics are improved by proper design of the structure parameters such as channel depth and sidewall spacer width. In addition, the use of removable nitride sidewall spacers also enhances hot-carrier characteristics by reducing the peak lateral electric field in the channel.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.61-67
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• 2006

We fabricate local damascene FinFET cell array in sub-60nm feature sized DRAM. The local damascene structure can remove passing-gate-effects in FinFET cell array. p+ boron in-situ doped polysilicon is chosen for the gate material, and we obtain a uniform distribution of threshold voltages at around 0.7V. Sub-threshold swing of 75mV/d and extrapolated off-state leakage current of 0.03fA are obtained, which are much suppressed values against those of recessed channel array transistors. We also obtain a few times higher on-state current. Based on the improved on- and off-state current characteristics, we expect that the FinFET cell array could be a new mainstream structure in sub-60nm DRAM devices, satisfying high density, low power, and high-speed device requirements.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.258-264
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• 2004

In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.5
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• pp.633-643
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• 2007

Statement of problem: Recently there are on an increasing trend of using implants-especially in edentulous mandible of severly alveolar bone recessed. Purpose: The aim of this study was to analyze the displacement and stress distribution of various mandibular implant-retained overdenture models supported by two implants in interforaminal region under the occlusion scheme load. Material and method: FEA models were made by the 3D scanning of the edentulous mandibular dentiform. The three models were named as Model M1, M2, and M3 accord ing to the position of implants: M1, Lt. incisor area, M2, Canine area, and M3, 1st Premolar area. Inter-implant angulation model was named as M4. Conventional complete denture was named M5 and used as a control group. Ball implant and Gold matrice were used as a retentive anchors. The occlusion type loads were applied horizontally over each tooth. Results: 1. In mandibular implant retained overdenture Canine Protected Occlusion type load resulted in higher levels of stress to the implants and female matrices than other types of loads. 2. The overdenture model M1, with implants in lateral incisor areas resulted in lower stress concentration to the implants and female matrices than other models. 3. In mandibular implant retained overdenture the stresses of the implant and female matrice were lower in mesially inclined implant than these of parallel installed implant. Conclusion: Lateral incisor areas could be the best site for the implants in mandibular implant-retained overdenture. The mandibular implant retained overdenture models mentioned above showed to the lowest stress to the implants and female matrices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.390-397
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• 2001

A novel self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. The proposed ESD structure is characterized by sidewall spacer and recessed-channel depth which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. Unlike the conventional LDD structures, it is shown that the GIDL current of the ESD structure is suppressed without sacrificing the maximum driving capability. The main reason for the reduction of GIDL current Is the decreased electric field at the point of the maximum band-to-band tunneling as the peak electric field is shifted toward the drain side.