• 센서학회지
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• 제23권2호
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• pp.73-81
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• 2014

Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

• Nuclear Engineering and Technology
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• 제56권4호
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• pp.1532-1537
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• 2024

Time-of-flight (TOF) PET detectors with fast-rise-time scintillators and fast-single photon time resolution silicon photomultiplier (SiPM) have been developed to improve the coincidence timing resolution (CTR) to sub-100 ps. The CTR can be further improved with an optimal bandwidth and minimized electronic noise in the readout circuit and this helps reduce the distortion of the fast signals generated from the TOF-PET detector. The purpose of this study was to develop an ultra-high frequency and fully-differential (UF-FD) readout circuit that minimizes distortion in the fast signals produced using TOF-PET detectors, and suppresses the impact of the electronic noise generated from the detector and front-end readout circuits. The proposed UF-FD readout circuit is composed of two differential amplifiers (time) and a current feedback operational amplifier (energy). The ultra-high frequency differential (7 GHz) amplifiers can reduce the common ground noise in the fully-differential mode and minimize the distortion in the fast signal. The CTR and energy resolution were measured to evaluate the performance of the UF-FD readout circuit. These results were compared with those obtained from a high-frequency and single ended readout circuit. The experiment results indicated that the UF-FD readout circuit proposed in this study could substantially improve the best achievable CTR of TOF-PET detectors.

• 센서학회지
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• 제30권4호
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• pp.223-228
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• 2021

This work presents a low-power CMOS image sensor (CIS) with a multi-column-parallel (MCP) readout structure while focusing on improving its performance compared to previous works. A delta readout scheme that utilizes the image characteristics is optimized for the MCP readout structure. By simply alternating the MCP readout direction for each row selection, additional memory for the row-to-row delta readout is not required, resulting in a reduced area of occupation compared to the previous work. In addition, the bias current of a pre-amplifier in a successive approximate register (SAR) analog-to-digital converter (ADC) changes according to the operating period to improve the power efficiency. The prototype CIS chip was fabricated using a 0.18-㎛ CMOS process. A 160 × 120 pixel array with 4.4 ㎛ pitch was implemented with a 10-bit SAR ADC. The prototype CIS demonstrated a frame rate of 120 fps with a total power consumption of 1.92 mW.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권3호
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• pp.380-386
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• 2016

This paper presents a compact and low-power on-chip touch sensor and readout circuit using shunt proximity touch sensor and its design scheme. In the proposed touch sensor readout circuit, the touch panel condition depending on the proximity of the finger is directly converted into the corresponding voltage level without additional signal conditioning procedures. Furthermore, the additional circuitry including the comparator and the flip-flop does not consume any static current, which leads to a low-power design scheme. A new prototype touch sensor readout integrated circuit was fabricated using complementally metal oxide silicon (CMOS) $0.18{\mu}m$ technology with core area of $0.032mm^2$ and total current of $125{\mu}A$. Our measurement result shows that an actual 10.4 inches capacitive type touch screen panel (TSP) can detect the finger size from 0 to 1.52 mm, sharply.

• 센서학회지
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• 제26권5호
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• pp.331-337
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• 2017

A readout circuit for a tactile sensor pad based on force sensing resistors was proposed, which was composed of an analog signal conditioning circuit and a digital circuit with a microcontroller. The conventional signal conditioning circuit has a dc offset voltage in the output signal, which results from the reference voltage applied to the FSR devices. The offset voltage reduces the dynamic range of the circuit and makes it difficult to operate the circuit under a low voltage power supply. In the proposed signal conditioning circuit, the dc offset voltage was removed completely. The microcontroller with A/D converter and D/A converter was used to enlarge the measurement range of pressure. For this, the microcontroller adjusts the FSR reference voltage according to the resistance magnitude of FSR under pressure. The operation of the proposed readout circuit which was connected to a tactile sensor pad with $5{\times}10$ FSR array was verified experimentally. The experimental results show the proposed readout circuit has the wider measurement range of pressure than the conventional circuit. The proposed circuit is suitable for low voltage and low power applications.

• 한국자기학회지
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• 제14권2호
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• pp.65-70
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• 2004

도메인 확장형 광자기 디스크 시스템(magnetic amplifing magnetooptical system; MAMMOS)의 기록마크 시뮬레이션을 위한 온도분포와 재생신호를 연구하였다. 정지된 디스크에서 레이저 빔에 의한 기록층과 이웃하는 층들의 온도 분포를 계산하였으며, 마크 크기와 길이 및 위치를 계산하였다. 또한 마크 모양에 따른 재생신호의 크기, 기록층에 기록되는 마크의 재생신호 및 판독층에서 확대된 재생신호를 시뮬레이션 하였다. 간소화된 열전달 특성 모델을 계산함으로써, 기록층과 인접한 층에서의 온도분포를 시간의 함수로 계산하였다. 마크 크기는 디스크가 회전할 때 기록 빔 펄스 파형에 의한 온도분포로부터 계산하였으며, 기록빔 펄스 파형으로부터 디스크의 온도분포를 이용하여 마크의 길이와 위치를 계산하였다. 재생신호는 디스크의 반사도 패턴과 가우시안 빔의 컨볼루션 연산을 이용하여 계산하였다. 판독층에서 빔 크기만큼 확대된 도메인의 재생신호가 기록층에서의 초승달 모양 마크에 기한 재생신호보다 2배 이상 증가되는 것을 알 수 있었다.

• 대한전자공학회논문지SD
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• 제46권6호
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• pp.31-38
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• 2009

휴대용 기기의 소비 전력을 낮추고 영상의 질을 개선하기 위해, 주변 밝기에 따라서 LCD 모듈의 백라이트를 조정하는 방법을 사용할 수 있다. 이를 효과적으로 구현하기 위해서 LCD 패널에 광 센서와 신호취득 회로를 집적하고자 했으며, LTPS TFT 공정을 이용하여 설계했다. 서로 다른 LCD 패널의 광 센서에 대한 특성 편차를 보정하기 위해 새로운 개념의 start-up 보정 방식을 제안하였다. 이와 더불어 광 전류 정보를 디지털 형태로 전달하기 위해 time-to-digital 방식을 사용하였으며, 이를 start-up 보정 방식과 효과적으로 결합하는 dual slope 보정 방법을 제안하였다. LTPS TFT 공정을 이용하여 최종적인 신호취득 회로를 구현하고자, 간단하고 안정적인 회로 구조와 타이밍을 제안하고 설계 및 검증을 진행했다. 설계한 신호취득 회로는 별도의 검사 설비 없이 광 센서 편차의 보정이 가능하며, 60dB 범위의 입력 광에 대해 10배수 구간 마다 4 단계의 디지털 데이터를 출력한다. 신호취득 속도는 100Hz이며, 디지털 변환의 선형 오차는 18% 미만이다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.3-3
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• 2003

• Journal of Astronomy and Space Sciences
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• 제19권1호
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• pp.57-66
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• 2002

MCP(microchannel plate)와 지연산 양극판(delay line anode), 그리고 지연선 검출회로로 구성되는, 원자외선 분광기 에 사용될 2차원 지연선(delay line) 방식 의 위 치 검출기 (position sensitive detector)를 설계하고 그 중 지연선 검출회로를 제작하여 동작 및 분해능에 대한 시험을 수행하였다. 이 시험에서는 검출회로의 고유한 분해능을 확인하기 위하여 MCP와 양극판은 각파 특성이 잘 알려진 스티뮬레이션(stimulator)와 양극판 시뮬레이터(anode simulator)로 대체되었다. 제작된 검출회로는 안정적으로 동작하였으며 분광 및 영상 축 방향으로 각각 약 570ps와 약 100ps의 시간 분해능을 가지는 것을 확인하였다

• 전자공학회논문지S
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• 제34S권11호
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• pp.25-33
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• 1997

The end-to-end rate-based control mechanism is used for the flow control of the ABR service to allow much more flexibility in ATM switching system. To accommodate the ABR service effciently many algorithms such as EFCI, EPRCA, ERICA, and CAPC2 have been proposed for the switch algorithm. ABR cells and related RM cells are received at the ATM switch fabric transparently without any processing. And then cells received from the traffic source are queued in the ABR buffer of switching system. The ABR buffer usually has some thresholds for easy congestion control signal transmission. Whatever we use, therefore, these can be many ABR traffic control algorithms to implement the ABR transfer capability. The genertion of congestion indicate signal for ABR control algorithms is determined by ABR buffer satus. And ABR buffer status is determined by ABR cells transfer ratio in ATM switch fabrics. In this paper, we presented the functional structures for control of the ABR traffic capability, proposed the readout scheduling, cell slot allocation of output link and the buffer allocation model for effective ABR traffic guranteeing with considering CBR/VBR traffics in ATM switch. Since the proposed readout scheduling scheme can provide more avaliable space to ABR buffer than existing readout scheduling scheme, generation rate of a SEND signal, that is, BCN signal in destination node can be increased for ABR call connection. Therefore, the proposed scheme, in this paper, can be appropriate as algorithm for effective ABR traffic service on output link of ATM switching node.