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Speech Rate Variation in Synchronous Speech (동시발화에 나타나는 발화 속도 변이 분석)

  • Kim, Miran;Nam, Hosung
    • Phonetics and Speech Sciences
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    • v.4 no.4
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    • pp.19-27
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    • 2012
  • When two speakers read a text together, the produced speech has been shown to reduce a high degree of variability (e.g., pause duration and placement, and speech rate). This paper provides a quantitative analysis of speech rate variation exhibited in synchronous speech by examining the global and local patterns in two dialects of Mandarin Chinese (Taiwan and Shanghai). We analyzed the speech data in terms of mean speech rate and the reference of "Just Noticeable difference (JND)" within a subject and across subjects. Our findings show that speakers show lower and less variable speech rates when they read a text synchronously than when they read alone. This global pattern is observed consistently across speakers and dialects maintaining the unique local variation patterns of speech rate for each dialect. We conclude that paired speakers lower their speech rates and decrease the variability in order to ensure the synchrony of their speech.

Simplification of Parallel Programming Concept LINDA (병렬 프로그래밍 개념 LINDA의 간편화)

  • 박영환
    • Proceedings of the Korean Information Science Society Conference
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    • 2000.10c
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    • pp.642-644
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    • 2000
  • 본 논문은 병렬 프로그래밍 개념 LINDA에서 read()와 in() 프리미티브의 역전에 따른 데드락 문제를 read() 프리미티브를 제거하고 in() 프리미티브와 튜플에 계수(counter) 필드를 추가하는 간편화를 통하여 해결하는 방법에 대하여 기술한다. 기존의 LIMDA 개념에서 read()와 in() 프리미티브의 차이는 전자는 튜플을 읽기만 하고 후자는 읽은 후 그 튜플을 지운다는 점에 있다. 결국 같은 튜플에 대하여 in() 프리미티브가 먼저 실행된다면 read() 프리미티브의 서비스를 요구한 프로세스는 한없이 기다리게 되는 문제가 있다. 따라서 각 프리미티브를 사용해야 하는 시점을 사용자가 주의 깊게 결정해야 하지만 이것이 병렬 프로그램의 개발에서는 그리 쉬운 일이 아니다. 따라서 본 논문에서는 read(0와 in() 프리미티브 2가지를 결합하여 in() 프리미티브 한가지와 튜플에 추가된 counter 필드를 이용하여 이 문제를 해결할 수 있는 방법을 소개한다.

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Improving RFID Read Rate associated with the high permittivity environments (고유전체에 부착된 RFID 태그의 인식률 향상에 관한 연구)

  • Chae, Gyoo-Soo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.6
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    • pp.1673-1677
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    • 2008
  • This paper studies on the read rate of UHF-band RFID tag. An RFID tag antenna attached on the high permittivity surface will be detuned that results in deteriorating the read rate. In this study, we investigate that the electrical performance for the tag antenna is detuned due to the ceramic material and the read rate is radically improved after tuning the antenna.

Assist Block for Read and Write Operations of SRAM (SRAM의 읽기 및 쓰기 동작을 위한 Assist Block)

  • Tan, Tuy Nguyen;Shon, Minhan;Choo, Hyunseung
    • Proceedings of the Korea Information Processing Society Conference
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    • 2013.05a
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    • pp.21-23
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    • 2013
  • Static Random Access Memory (SRAM) using CMOS technology has many advantages. It does not need to refresh every certain time, as a result, the speed of SRAM is faster than Dynamic Random Access Memory (DRAM). This is the reason why SRAM is widely used in almost processors and system on chips (SoC) which require high processing speed. Two basic operations of SRAM are read and write. We consider two basic factors, including the accuracy of read and write operations and the speed of these operations. In our paper, we propose the read and write assist circuits for SRAM. By adding a power control circuit in SRAM, the write operation performed successfully with low error ratio. Moreover, the value in memory cells can be read correctly using the proposed pre-charge method.

An Advanced Embedded SRAM Cell with Expanded Read/Write Stability and Leakage Reduction

  • Chung, Yeon-Bae
    • Journal of IKEEE
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    • v.16 no.3
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    • pp.265-273
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    • 2012
  • Data stability and leakage power dissipation have become a critical issue in scaled SRAM design. In this paper, an advanced 8T SRAM cell improving the read and write stability of data storage elements as well as reducing the leakage current in the idle mode is presented. During the read operation, the bit-cell keeps the noise-vulnerable data 'low' node voltage close to the ground level, and thus producing near-ideal voltage transfer characteristics essential for robust read functionality. In the write operation, a negative bias on the cell facilitates to change the contents of the bit. Unlike the conventional 6T cell, there is no conflicting read and write requirement on sizing the transistors. In the standby mode, the built-in stacked device in the 8T cell reduces the leakage current significantly. The 8T SRAM cell implemented in a 130 nm CMOS technology demonstrates almost 100 % higher read stability while bearing 20 % better write-ability at 1.2 V typical condition, and a reduction by 45 % in leakage power consumption compared to the standard 6T cell. The stability enhancement and leakage power reduction provided with the proposed bit-cell are confirmed under process, voltage and temperature variations.

Impedance Evaluation Method of UHF RFID Tag Chip for Maximum Read Range (UHF RFID 태그의 최대 인식 거리를 얻기 위한 태그 칩의 임피던스 산출 방법)

  • Sim, Yong-Seog;Yang, Jeen-Mo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.12
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    • pp.1148-1157
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    • 2013
  • In a passive UHF RFID system, the impedance matching between tag antenna and chip as well as the protocol parameter settings in a reader plays important role in determination of the maximum read-range. Almost no paper, however, has dealt with the above issues in relation with the maximum read range. In this paper, two known methods (of using the value from data sheets and proprietary RFID tester) and our proposing method in chip impedance evaluation are compared in terms of maximum read range. The read range of tags whose antenna impedance is conjugate matched with the chip impedance obtained from the proposed method is improved maximum 73 % more than that of tags from the other methods.

Extending the Read Range of UHF Mobile RFID Readers: Arbitration Methods Based on Interference Estimation

  • Ahn, Si-Young;Park, Jun-Seok;Seong, Yeong Rak;Oh, Ha-Ryoung
    • Journal of Electrical Engineering and Technology
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    • v.9 no.6
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    • pp.2025-2035
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    • 2014
  • The read range of UHF mobile readers can be extended by a booster for mobile RFID readers (BoMR). But in an environment where multiple BoMRs are installed, the read success rate may be decreased due to signal interference. This paper proposes three arbitration methods based on interference estimation with the purpose of enhancing the read success rate. A central arbitration server manages global information in centralized arbitration method (CAM) without broadcast/multicast communication facility. In fully distributed arbitration method (FDAM), all the arbitration messages are broadcasted from a BoMR to every BoMR, and each BoMR decides with broadcasted global information. Events in FDAM are serialized naturally with broadcasted messages. Cluster Distributed Arbitration Method (CDAM) forms clusters with multicasted BoMRs and a selected BoMR acts as an arbiter in the cluster. Such effects as lengthened read range, improved the read success rates of readers can be obtained by the proposed methods without any hardware modification. In order to evaluate the arbitration methods, the RFID system is modeled by using the DEVS formalism and simulated by using the DEVSim++.

The Nonlinear Equalizer for Super-RENS Read-out Signals using an Asymmetric Waveform Model (비대칭 신호 모델을 이용한 super-RENS 신호에서의 비선형 등화기)

  • Moon, Woosik;Park, Sehwang;Lee, Jieun;Im, Sungbin
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.5
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    • pp.70-75
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    • 2014
  • Super-resolution near-field structure (super-RENS) read-out samples are affected by a nonlinear and noncausal channel, which results in inter-symbol interference (ISI). In this study, we investigate asymmetry or domain bloom in super-RENS in terms of equalization. Domain bloom is caused by writing process in optical recording. We assume in this work that the asymmetry symbol conversion scheme is to generate asymmetric symbols, and then a linear finite impulse response filter can model the read-out channel. For equalizing this overall nonlinear channel, the read-out signals are deconvolved with the finite impulse response filter and its output is decided based on the decision rule table that is developed from the asymmetry symbol conversion scheme. The proposed equalizer is investigated with the simulations and the real super-RENS samples in terms of raw bit error rate.

Overlapping of /o/ and /u/ in modern Seoul Korean: focusing on speech rate in read speech

  • Igeta, Takako;Hiroya, Sadao;Arai, Takayuki
    • Phonetics and Speech Sciences
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    • v.9 no.1
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    • pp.1-7
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    • 2017
  • Previous studies have reported on the overlapping of $F_1$ and $F_2$ distribution for the vowels /o/ and /u/ produced by young Korean speakers of the Seoul dialect. It has been suggested that the overlapping of /o/ and /u/ occurs due to sound change. However, few studies have examined whether speech rate influences the overlapping of /o/ and /u/. On the other hand, previous studies have reported that the overlapping of /o/ and /u/ in syllable produced by male speakers is smaller than by female speakers. Few reports have investigated on the overlapping of the two vowels in read speech produced by male speakers. In the current study, we examined whether speech rates affect overlapping of /o/ and /u/ in read speech by male and female speakers. Read speech produced by twelve young adult native speakers of Seoul dialect were recorded in three speech rates. For female speakers, discriminant analysis showed that the discriminant rate became lower as the speech rate increases from slow to fast. Thus, this indicates that speech rate is one of the factors affecting the overlapping of /o/ and /u/. For male speakers, on the other hand, the discriminant rate was not correlated with speech rate, but the overlapping was larger than that of female speakers in read speech. Moreover, read speech by male speakers was less clear than by female speakers. This indicates that the overlapping may be related to unclear speech by sociolinguistic reasons for male speakers.

Design of High-Reliability eFuse OTP Memory for PMICs (PMIC용 고신뢰성 eFuse OTP 메모리 설계)

  • Yang, Huiling;Choi, In-Wha;Jang, Ji-Hye;Jin, Liyan;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.7
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    • pp.1455-1462
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    • 2012
  • In this paper, a BCD process based high-reliability 24-bit dual-port eFuse OTP Memory for PMICs is designed. We propose a comparison circuit at program-verify-read mode to test that the program datum is correct by using a dynamic pseudo NMOS logic circuit. The comparison result of the program datum with its read datum is outputted to PFb (pass fail bar) pin. Thus, the normal operation of the designed OTP memory can be verified easily by checking the PFb pin. Also we propose a sensing margin test circuit with a variable pull-up load out of consideration for resistance variations of programmed eFuse at program-verify-read mode. We design a 24-bit eFuse OTP memory which uses Magnachip's $0.35{\mu}m$ BCD process, and the layout size is $289.9{\mu}m{\times}163.65{\mu}m$ ($=0.0475mm^2$).