• Journal of Korea Society of Industrial Information Systems
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• v.14 no.3
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• pp.30-36
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• 2009

With the rapid progress of medical image information system, a variety of researches for the system that can read and decipher the medical images in anytime and anywhere have been studied. In this paper, we develop personal digital assistant (PDA) device based mobile digital imaging and communications in medicine (DICOM) image viewer that can process the received medical images at any time. In particular, with the aid of the proposed mobile DICOM image viewer, we can read several images simultaneously and we can read the selected image only from the several images. To cope with the small size of PDA screen, the function of image enlargement is also included in the proposed mobile DICOM image viewer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.17-26
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• 2006

The analog Viterbi decoder for the PR (1 2 2 1) which is used for BVD read channel is designed with circular analog parallel circuits. Since the inter symbol interference is serious problem in the high density magnetic storage device or DVD, the PRML technology is normally employed for the purpose of minimizing the decoding error. The feature of the PRML technology is with the multi-level coding according to the predetermined combining rule among the neighboring symbols and with the decoding according to the known combining rule. Though the conventional PRML technology is implemented with the digital circuits, the recent trend towards this end is with the utilization of the analog circuits due to the requirements of higher speed and lower power in the DVD read channel. In this study, the Viterbi decoder which is the bottleneck of the PRML implementation is designed with the analog parallel circuit structure. The designed Viterbi decoder for the PR (1 2 2 1) signal shows 3 times faster in the speed and 1/3 times less in the power consumption than thoseoftheconventionaldigitalcounterpart.

• Korean Journal of Childcare and Education
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• v.9 no.5
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• pp.277-297
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• 2013

The present study was designed to examine fathers' awareness and practice of picture book reading with toddlers. The subjects were 221 fathers who have toddlers, and the data collected by questionnaires were analysed by mean and standard deviation, and frequency analysis. As a result, approximately 59% of fathers stated that it is essential to read to their children who are 12 month old or less, and 36% of fathers answered that they read books as much as their children wanted. The majority considered the emotional aspect of picture book reading as being significant. Also, nearly half (46%) of the fathers read books to their children 1-2 times per week, and 37% of them spent 6-10 minutes at a time reading books. While reading books, 60% of the fathers explained text and pictures to their children and a fourth of the fathers answered their children's questions. Also, while reading books, fathers tried to accept their toddlers' responses positively. However, they did not have much time to read books to their children and had little knowledge on how to read books to infants. Further research and education programs on picture book reading for fathers are needed.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.2
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• pp.168-175
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• 2017

In this paper, a 5V small-area NMOS-diode eFuse OTP memory cell is proposed. This cell which is used in PMICs consists of a 5V NMOS transistor and an eFuse link as a memory part, based on a BCD process. Also, a regulated voltage of V2V ($=2.0V{\pm}10%$) instead of the conventional VDD is used to the pull-up loads of a VREF circuit and a BL S/A circuit to obtain a wider operational voltage range of the eFuse memory cell. When this proposed cells are used in the simulation, their sensing resistances are found to be $15.9k{\Omega}$ and $32.9k{\Omega}$, in the normal read mode and in the program-verify-read mode, respectively. Furthermore, the read current flowing through a non-blown eFuse is restricted to $97.7{\mu}A$. Thus, the eFuse link of a non-blown eFuse OTP memory cell is kept non-blown. The layout area of the designed 1kb eFuse OTP memory IP based on Dongbu HiTek's BCD process is $168.39{\mu}m{\times}479.45{\mu}m(=0.08mm^2)$.

• Science of Emotion and Sensibility
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• v.24 no.3
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• pp.61-70
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• 2021

Because the educational significance of reading activities for growing children is so great, the importance of reading cannot be overemphasized. While the reading volume of elementary school students in Korea is very high, as they go up to middle school, the reading volume falls rapidly. This study examined a more effective way to resolve this middle school reduction in reading volume. Middle school freshmen were surveyed on their reading habits and preferences in the sixth grade of elementary school, after which the groups were divided into two groups based on their averages; groups with high/low reading habits and groups with high/low reading preferences). Participants also wrote reading reports for six weeks, kept a record of the days of the week they read for more than 20 minutes, and noted down the time they read in minutes. It was found that 75% of participants did not read one book a week when in the sixth grade of elementary school and it was confirmed that reading many books and liking to read were elements that had different dimensions. For example, about 35% of the participants said they liked books but rarely read them. It was also confirmed that the reading habits formed in elementary school were a strong variable that affected the number of days that and the reading time of middle school students rather than the reading preferences formed in elementary school. This study concluded that a subjective attitude toward reading and actually reading were completely different problems, which suggested that 'habits' could have a greater influence than 'preferences' when performing tasks to achieve goals.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.3
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• pp.312-320
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• 2019

In this paper, we design a 512Kb eFlash IP using 110nm eFlash cells. We proposed eFlash core circuit such as row driver circuit (CG/SL driver circuit), write BL driver circuit (write BL switch circuit and PBL switch select circuit), read BL switch circuit, and read BL S/A circuit which satisfy eFlash cell program, erase and read operation. In addition, instead of using a cross-coupled NMOS transistor as a conventional unit charge pump circuit, we propose a circuit boosting the gate of the 12V NMOS precharging transistor whose body is GND, so that the precharging node of the VPP unit charge pump is normally precharged to the voltage of VIN and thus the pumping current is increased in the VPP (boosted voltage) voltage generator circuit supplying the VPP voltage of 9.5V in the program mode and that of 11.5V in the erase mode. A 12V native NMOS pumping capacitor with a bigger pumping current and a smaller layout area than a PMOS pumping capacitor was used as the pumping capacitor. On the other hand, the layout area of the 512Kb eFlash memory IP designed based on the 110nm eFlash process is $933.22{\mu}m{\times}925{\mu}m(=0.8632mm^2)$.

• The Monthly Diabetes
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• s.219
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• pp.69-72
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• 2008

• Korean Architects
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• s.558
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• pp.30-57
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• 2015

• The Monthly Diabetes
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• s.220
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• pp.83-86
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• 2008

• Proceedings of the Korean Society of Veterinary Clinics Conference
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• 2007.10a
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• pp.60-82
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• 2007