• Title/Summary/Keyword: reaction-bonded SiC

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Friction Coefficient and Microstructure of Reaction-Bonded Silicon Carbide According to Sliding Conditons (반응소결 탄화규소의 접동조건에 따른 마찰계수 및 미세구조)

  • 김호균;김인섭;이병하
    • Journal of the Korean Ceramic Society
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    • v.32 no.7
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    • pp.825-831
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    • 1995
  • Reaction-bonded SiC-Si material was fabricated by infiltration of Si melt into a mixture of $\alpha$-SiC and carbon at 175$0^{\circ}C$ under the vacuum atmosphere. Wear properties were analyzed by ball-on-plate wear tester, changing loading weight, sliding speed, sliding time and atmosphere, Results showed that the friction coefficient was decreased with increasing load and sliding velocity. The lowest friction coefficient of 0.05 was obtained under an oil atmosphere. The analysis of the wear surface indicated that the areas wehre particles were pulled out and where free silicon particles worn out preferentially serve as liquid reservoirs to decrease the wear resistance.

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$\beta$-SiC Formation Mechanisms in Si Melt-C-SiC System (용융 Si-C-SiC계에서 $\beta$-SiC 생성기구)

  • 서기식;박상환;송휴섭
    • Journal of the Korean Ceramic Society
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    • v.36 no.6
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    • pp.655-661
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    • 1999
  • ${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

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Effects of Debinding Atmosphere on Properties of Sintered Reaction-bonded Si3N4 Prepared by Tape Casting Method

  • Park, Ji-Sook;Lee, Sung-Min;Han, Yoon-Soo;Hwang, Hae-Jin;Ryu, Sung-Soo
    • Journal of the Korean Ceramic Society
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    • v.53 no.6
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    • pp.622-627
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    • 2016
  • The effects of the debinding atmosphere on the properties of sintered reaction-bonded $Si_3N_4$ (SRBSN) ceramics prepared by tape casting method were investigated. Si green tape was produced from Si slurry of Si powder, using 11.5 wt% polyvinyl butyral as the organic binder and 35 wt% dioctyl phthalate as the plasticizer. The debinding process was conducted in air and $N_2$ atmospheres at $400^{\circ}C$ for 4 h. The nitridation process of the debinded Si specimens was performed at $1450^{\circ}C$, followed by sintering at $1850^{\circ}C$ and 20 MPa. The results revealed that the debinding atmosphere had a significant effect on $Si_3N_4$ densification and thermal conductivity. Owing to the higher sintered density and larger grain size, the thermal conductivity of $Si_3N_4$ specimens debinded in air was higher than that of the samples debinded in $N_2$. Thus, debinding in air could be suitable for the manufacture of high-performance SRBSN substrates by tape casting.

Fabrication of Carbon Fiber Reinforced Reaction Bonded SiC Composite Fabricated by a Molten Si Infiltration Method; I. The Effect of Carbon Fiber Coating Process (용융 Si 침윤법에 의해 제조된 반응소결 탄소 섬유강화 탄화규소 복합체 제조; I. 탄소 섬유 코팅 방법에 따른 영향)

  • Yun, Sung-Ho;Tan, Phung Nhut;Cho, Gyung-Sun;Cheong, Hun;Kim, Young-Do;Park, Sang-Whang
    • Journal of the Korean Ceramic Society
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    • v.45 no.9
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    • pp.531-536
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    • 2008
  • Reaction bonded silicon carbide (RBSC) composite for heat-exchanger was fabricated by molten Si infiltration method. For enforcing fracture toughness to reaction bonded silicon carbide composite, the surface of carbon fiber has coating layer by SiC or pyro-carbon. For SiC layer coating, CVD method was used. And for carbon layer coating, the phenol resin was used. In the case of carbon layer coating, fracture toughness and fracture strength were enhancing to 4.4 $MPa{\cdot}m^{1/2}$ and 279 MPa.

Effect of the SiC Size on the Thermal and Mechanical Properties of Reaction-bonded Silicon Carbide Ceramics (반응소결 탄화규소 세라믹스의 열물성과 기계적 특성에 미치는 SiC 크기의 영향)

  • Kwon, Chang-Sup;Oh, Yoon-Suk;Lee, Sung-Min;Han, Yoonsoo;Shin, Hyun-Ick;Kim, Youngseok;Kim, Seongwon
    • Journal of Powder Materials
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    • v.21 no.6
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    • pp.467-472
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    • 2014
  • RBSC (reaction-bonded silicon carbide) represents a family of composite ceramics processed by infiltrating with molten silicon into a skeleton of SiC particles and carbon in order to fabricate a fully dense body of silicon carbide. RBSC has been commercially used and widely studied for many years, because of its advantages, such as relatively low temperature for fabrication and easier to form components with near-net-shape and high relative density, compared with other sintering methods. In this study, RBSC was fabricated with different size of SiC in the raw material. Microstructure, thermal and mechanical properties were characterized with the reaction-sintered samples in order to examine the effect of SiC size on the thermal and mechanical properties of RBSC ceramics. Especially, phase volume fraction of each component phase, such as Si, SiC, and C, was evaluated by using an image analyzer. The relationship between microstructures and physical properties was also discussed.

Effect of Y2O3 Additive Amount on Densification of Reaction Bonded Silicon Carbides Prepared by Si Melt Infiltration into All Carbon Preform (완전 탄소 프리폼으로부터 Si 용융 침투에 의해 제조한 반응 소결 탄화규소의 치밀화에 미치는 Y2O3 첨가량의 영향)

  • Cho, Kyeong-Sik;Jang, Min-Ho
    • Korean Journal of Materials Research
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    • v.31 no.5
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    • pp.301-311
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    • 2021
  • The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y2O3-added carbon preforms at 1,450 and 1,500℃ for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y2O3-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y2O3-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y2O3 phases are detected by XRD analysis without the appearance of graphite. As the content of Y2O3 in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 ℃ for 2 hours from a carbon preform with 2.0 wt% Y2O3 added has 0.20 % apparent porosity and 96.9 % relative density.

Effects of Mixing Ratio of Silicon Carbide Particles on the Etch Characteristics of Reaction-Bonded Silicon Carbide

  • Jung, Youn-Woong;Im, Hangjoon;Kim, Young-Ju;Park, Young-Sik;Song, Jun-Baek;Lee, Ju-Ho
    • Journal of the Korean Ceramic Society
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    • v.53 no.3
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    • pp.349-353
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    • 2016
  • We prepared a number of reaction-bonded silicon carbides (RBSCs) made from various mixing ratios of raw SiC particles, and investigated their microstructure and etch characteristics by Reactive Ion Etch (RIE). Increasing the amount of $9.5{\mu}m$-SiC particles results in a microstructure with relatively coarser Si regions. On the other hand, increasing that of $2.6{\mu}m$-SiC particles produces much finer Si regions. The addition of more than 50 wt% of $2.6{\mu}m$-SiC particles, however, causes the microstructure to become partially coarse. We also evaluated their etching behaviors in terms of surface roughness (Ra), density and weight changes, and microstructure development by employing Confocal Laser Scanning Microscope (CLSM) and Scanning Electron Microscope (SEM) techniques. During the etching process of the prepared samples, we confirmed that the residual Si region was rapidly removed and formed pits isolating SiC particles as islands. This leads to more intensified ion field on the SiC islands, and causes physical corrosion on them. Increased addition of $2.6{\mu}m$-SiC particles produces finer residual Si region, and thus decreases the surface roughness (Ra.) as well as causing weight loss after etching process by following the above etching mechanism.

Properties of Silicon Carbide-Carbon Fiber Composites Prepared by Infiltrating Porous Carbon Fiber Composites with Liquid Silicon

  • Lee, Jae-Chun;Park, Min-Jin;Shin, Kyung-Sook;Lee, Jun-Seok;Kim, Byung-Gyun
    • The Korean Journal of Ceramics
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    • v.3 no.4
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    • pp.229-234
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    • 1997
  • Silicon carbide-carbon fiber composites have been prepared by partially Infiltrating porous carbon fiber composites with liquid silicon at a reaction temperature of $1670^{\circ}C$. Reaction between molten silicon and the fiber preform yielded silicon carbide-carbon fiber composites composed of aggregates of loosely bonded SiC crystallites of about 10$\mu\textrm{m}$ in size and preserved the appearance of a fiber. In addition, the SiC/C fiber composites had carbon fibers coated with a dense layer consisted of SiC particles of sizes smaller than 1$\mu\textrm{m}$. The physical and mechanical properties of SiC/C fiber composites were discussed in terms of infiltrated pore volume fraction of carbon preform occupied by liquid silicon at the beginning of reaction. Lower bending strength of the SiC/C fiber composites which had a heterogeneous structure in nature, was attributed to the disruption of geometric configuration of the original carbon fiber preform and the formation of the fibrous aggregates of the loosely bonded coarse SiC particles produced by solution-precipitation mechanism.

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