• Journal of Sensor Science and Technology
• /
• v.10 no.6
• /
• pp.328-337
• /
• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Applied Chemistry for Engineering
• /
• v.17 no.6
• /
• pp.604-608
• /
• 2006

Polymer composites for measuring the radioactive contamination are prepared by coating ZnS(Ag) powders as a scintillator on polysulfone base layer. The composites consist of the active layer for a scintillation reaction with radioactive wastes and the transparent support layer for transmittance of light photons emitted by scintillation in the active layer. The binding of the active layer, including ZnS(Ag), on the support layer is proceeded via coating with polysulfone as a binder, without any extra adhesive. The coating was obtained by either casting via a Doctor Blade as applicator or screen printing. The prepared composites feature a monolithic structure, resulting in the complete adhesion between two layers. The composite prepared by the casting technique using an applicator holds a good detection efficiency in measuring the alpha radionuclide, but its structure becomes fragile because of warping in morphology. On the contrary, the composite prepared by the screen printing shows a good detection capacity as well as a good stability in a mechanical shape.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.4
• /
• pp.202-209
• /
• 2002

The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.114-114
• /
• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

• Journal of the Korea Computer Graphics Society
• /
• v.14 no.4
• /
• pp.7-18
• /
• 2008

To realistically produce fluids such as smoke for the visual effects in the films or animations, we need two main processes: a physics-based modeling of smoke and a rendering of smoke simulation data, based on light transport theory. In the computer graphics community, the physics-based fluids simulation is generally adopted for smoke modeling. Recently, the interest of the particle-based Lagrangian simulation methods is increasing due to the advantages at simulation time, instead of the grid-based Eulerian simulation methods which was widely used. As a result, because the smoke rendering technique depends heavily on the modeling method, the research for rendering of the particle-based smoke data still remains challenging while the research for rendering of the grid-based smoke data is actively in progress. This paper focuses on realistic rendering technique for the smoke particles produced by Lagrangian simulation method. This paper introduces a technique which is called particle map, that is the expansion and modification of photon mapping technique for the particle data. And then, this paper suggests the novel particle map technique and shows the differences and improvements, compared to previous work. In addition, this paper presents irradiance map technique which is the pre-calculation of the multiple scattering term in the volume rendering equation to enhance efficiency at rendering time.

• Korean Journal of Crystallography
• /
• v.12 no.3
• /
• pp.127-136
• /
• 2001

A stoichiometric mixture of evaporating materials for ZnGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa₂Se₄single crystal thin films measured from Hall effect by von der Pauw method are 9.63×10/sup 17/㎤ and 296 ㎠/V·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa₂Se₄single crystal thin film, we have found that the values of spin orbit splitting △so and the crystal field splitting Δcr were 251.9meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on th ZnGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (A°, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Journal of the Mineralogical Society of Korea
• /
• v.18 no.3 s.45
• /
• pp.147-153
• /
• 2005

Naldrettite, recently discovered in the Mesamax Northwest deposit, Ungava region, northern Quebec, Canada, was reported as a new mineral. In order to confirm whether itis a natural equivalent of synthetic $Pd_2Sb$ phase or not, the pure $Pd_2Sb$ phase has been synthesized and investigated by reflected microscope, electron microprobe analyser, X-ray diffractometer, and micro-indentation hardness tester. Under reflected light synthetic $Pd_2Sb$ Phase is white with a creamy tint in both air and oil and weakly bireflectant. Anisotropism is strong, from brownish gray to greenish blue in air. Micro-indentation hardness test gives VHN100=293(242-322). Composition of the phase is $63.7\~64.3wt.\%\;Pd\;and\; 36.4\~36.8wt.\%$ Sb, and is entirely consistent. The phase, quenched from $500^{\circ}C$, is orthorhobic with space group $Cmc2_1$, and the cell parameters are a=3.366(1), b=17.523(3), c=6.929(2) ${\AA}$. All mineralogical properties of synthetic $Pd_2Sb$ compare very well with those of naldrettite, confirming that naldrettite is the natural analogue of the synthetic $Pd_2Sb$ phase.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.4
• /
• pp.131-135
• /
• 2020

Single crystal phased CaZrO₃ : Eu³⁺ phosphor have been synthesized by skull melting method. The crystal structure, morphology and optical properties of synthesized phosphor were investigated XRD (X-ray diffraction), SEM (scanning electron microscopy), UV (ultraviolet) fluorescence reaction and PL (photo luminescence). The starting materials having chemical composition of CaO: ZrO₂ : Eu₂O₃= 0.962 : 1.013 : 0.025 mol% were charged into a cold crucible. The cold crucible was 120 mm in inner diameter and 150 mm in inner height, and 3 kg of mixed powder (CaO, ZrO₂ and Eu₂O₃) was completely melted within 1 hour at an oscillation frequency of 3.4 MHz, maintained in the molten state for 2 hours, and finally air-cooled. The XRD results show that synthesized phosphor is stabilized in orthorhombic perovskite structure without any impurity phases. The synthesized phosphor could be excited by UV light (254 or 365 nm) and the emission spectra results indicated that bright red luminescence of CaZrO₃ : Eu³⁺ due to magnetic dipole transition ⁵D₀→⁷F₂ at 615 nm was dominant.

• Resources Recycling
• /
• v.18 no.4
• /
• pp.24-30
• /
• 2009

Rare earth based calcium aluminate phosphor ($CaAl_2O_4:Eu^{2+}$, $Nd^{3+}$) supported $TiO_2$ nanoparticles are synthesized by using sol-gel method, which are further characterized using powder X-ray diffraction (XRD), fourier transform infrared (FT-IR), diffuse reflectance UV-Visible spectroscopy (DRS UV-Vis) and transmission electron microscopy (TEM). The XRD pattern of as-prepared and sintered phosphor supported $TiO_2$ does not show the tendency to change the crystal structure from anatase to rutile phase up to $600^{\circ}C$. This indicates that the phosphor support might inhibit the densification and crystallite growth by providing dissimilar boundaries. The diffuse reflectance spectral (DRS) measurements showed shift towards longer wavelength indicating reduction in the band-gap energy as compared to free $TiO_2$. The FT-IR spectra of phosphor supported $TiO_2$ nanoparticles show shift in the peak positions to lower wavelengths. This indicates that the $TiO_2$ nanoparticles are not free, but covalently bonded to the phosphor support. TEM micrographs show presence of crystalline and spherical $TiO_2$ nanoparticles (8 - 15 nm diameter) dispersed uniformly on the surface of phosphor.

• Applied Chemistry for Engineering
• /
• v.19 no.5
• /
• pp.554-558
• /
• 2008

$(1-x)SiO_2-(x)TiO_2$ composite fibers with various compositions of $TiO_2$ were prepared by electrospinning their sol-gel precursors of titanium (IV) iso-propoxide (TiP), and tetraethyl orthosilicate (TEOS). The surface morphology and structure of sintered composite fibers were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), simultaneous thermogravimetric analysis-differential scanning calorimetry (TGA-DSC) and Fourier transform infrared spectroscopy (FT-IR). As the content of $TiO_2$ in $(1-x)SiO_2-(x)TiO_2$ system was increased the average diameter of composite fibers was proportionally increased. Also, the transformation of $TiO_2$ from anatase to rutile form was inhibited by the highly dispersed $TiO_2$ around $SiO_2$ particles up to $0.6SiO_2-0.4TiO_2$ composite fibers even after calcination at $1000^{\circ}C$. The photocatalytic activity of $SiO_2-TiO_2$ composite fibers was examined for the methylene blue (MB) decomposition which was confirmed using UV-vis/DRS spectra. The experiments demonstrated that the MB in aqueous solution was successfully photodegraded using $SiO_2-TiO_2$ composite nanofibers under UV-visible light irradiation.