• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.331-338
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• 2005

The rapid advances in high power light sources and arrays as encountered in incandescent lamps have induced dramatic increases in die heat flux and power consumption at all levels of high power LED packaging. The lifetime of such devices and device arrays is determined by their temperature and thermal transients controlled by the powering and cooling, because they are usually operated under rough environmental conditions. The reliability of packaged electronics strongly depends on the die attach quality, because any void or a small delamination may cause instant temperature increase in the die, leading sooner or later to failure in the operation. Die attach materials have a key role in the thermal management of high power LED packages by providing the low thermal resistance between the heat generating LED chips and the heat dissipating heat slug. In this paper, thermal transient characteristics of die attach in high power LED package have been studied based on the thermal transient analysis using the evaluation of the structure function of the heat flow path. With high power LED packages fabricated by die attach materials such as Ag paste, solder paste and Au/Sn eutectic bonding, we have demonstrated characteristics such as cross-section analysis, shear test and visual inspection after shear test of die attach and how to detect die attach failures and to measure thermal resistance values of die attach in high power LED package. From the structure function oi the thermal transient characteristics, we could know the result that die attach quality of Au/Sn eutectic bonding presented the thermal resistance of about 3.5K/W. It was much better than those of Ag paste and solder paste presented the thermal resistance of about 11.5${\~}$14.2K/W and 4.4${\~}$4.6K/W, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Transactions of the Korean Society of Automotive Engineers
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• v.17 no.3
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• pp.8-14
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• 2009

Effect of heterogeneity of combustion chamber has been thought as one of the way to avoid dramatically generating heat in HCCI Combustion. The purpose of this research is to investigate the effect of heterogeneity, especially thermal stratification and fuel strength stratification on HCCI Combustion fueled with DME and n-Butane. Thermal stratification is formed in Combustion Chamber of Rapid Compression Machine with 3 Kinds of pre-mixture has different properties. The stratified charge mixture is adiabatic compressed and on that process, in cylinder gas pressure and two-dimensional chemiluminescence images are measured and analyzed.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.542-545
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• 1987

THE ELECTRICAL CHARACTERISTICS Of RAPID THERMAL OXIDES AND NITRIDED OXIDES HAVE BEEN INVESTIGATED. R.T.OXIDE FILMS HAVE BEEN PREPARED BY ONLY R.T. OXIDATION OR R.T.OXIDATION AND SUBSEQUENT R.T.ANNEAL. NITRIDED OXIDE FILMS HAVE BEEN PREPARED BY R.T.OXIDATION AND SUBSEQUENT R.T.NITRIDATION.AND CONVENTIONAL OXIDES ALSO HAVE BEEN PREPARED TO COMPARE WITH R.T.P OXIDES. R.T.ANNEALED OXIDES SHOW EXCELLENT BREAKDOWN FIELD. LEAKAGE CURRENT AND TDDB CHARACTERISTICS. ALSO, CAPACITANCE Of R.T NITRIDED OXIDES ARE SUPERIOR BY 10% TO CONVENTIONAL OXIDES, BUT TDDB CHARACTERISTIC ARE POORER THAN OXIDE FILMS.

• Laser Solutions
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• v.3 no.1
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• pp.21-28
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• 2000

Selective Laser Sintering (SLS) can produce three-dimensional objects directly from a CAD solid model without part-specific tooling. In this study, a simple rapid prototyping through selective laser sintering on brass powder is investigated using a Nd-YAG laser. Experiments are conducted to produce single lines on a powder-packed bed for various process parameters. Also, temperature distribution in the powder bed and the thickness of a melted line are predicted by finite element analysis. In the numerical analysis, the thermal conductivity of the brass powder which is obtained as a function of state and temperature is used.

• Proceedings of the Korea Concrete Institute Conference
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• 2001.05a
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• pp.521-526
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• 2001

Box-culvert is very important structure used almost every road construction. However this is treated very simple structure in design and construction. So many crack such as nonstructural crack has been occurred. This crack is very harmful on durability of concrete. In this study, thermal crack, one of the nonstructural crack, of box-culvert controled by using rapid-strength belite cement concrete. In this process, not only heat of hydration and thermal stress but also material mechanics properties and characteristics of durability were tested. and same model box-culvert using OPC concrete is constructed in same condition for comparison.

• Transactions of Materials Processing
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• v.19 no.3
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• pp.152-159
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• 2010

Rapid mold heating has been recent issue to enable the injection molding of thin-walled parts or micro/nano structures. High-frequency induction is an efficient way to heat mold surface by electromagnetic induction in a non-contact manner, and has been recently applied to the injection molding due to its capability of rapid heating and cooling of mold surface. The present study covers a three-dimensional finite element analysis to investigate heating efficiency and structural safety of the induction heating process of an injection mold. To simulate the induction heating process, an integrated simulation method is proposed by effectively connecting an electromagnetic field analysis, a transient heat transfer analysis and a thermal stress analysis. The estimated temperature changes are compared with experimental measurements for various types of induction coil, from which heating efficiency according to the coil shape is discussed. The resulting thermal stress distributions of the mold plate for various types of induction coils are also evaluated and discussed in terms of the structural safety.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.11-16
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• 2016

The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than $250^{\circ}C$, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.571-577
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• 2006

We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• Journal of the Korean institute of surface engineering
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• v.28 no.2
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• pp.67-76
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• 1995

The microstructure of 95wt.%Pb/5wt.%Sn and 63wt.%Sn/37wt.%Pb solders for flip chip bonding process has been characterized. Solders were deposited by thermal evaporation and reflowed in the conventional furnace or by rapid thermal annealing(RTA) process. As-deposited films show columnar structure. The microstructure of furnace cooled 63Sn/37Pb solder shows typical lamellar form, but that of RTA treated solder has the structure showing an uniform dispersion of Pb-rich phase in Sn matrix. The grain size of 95Pb/5Sn solder reflowed in the furnace is about $5\mu\textrm{m}$, but the grain size of RTA treated solder is too small to be observed. The microstructure in 63Sn/37Pb solder bump shows the segregation of Pb phase in the Sn rich matrix regardless of reflowing method. The 63Sn/37Pb solder bump formed by RTA process shows more uniform microstructure. These result are related to the heat dissipation in the solder bump.