• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.533-536
• /
• 2006

VIATRON TECHNOLOGIES has developed Field-Enhanced Rapid Thermal Processor (FERTP) system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The FE-RTP allows the diverse process options including crystallization, thermal oxidation of gate oxides and fast pre-compactions. The process and equipment compatibility with a-Si TFT lines is able to provide a viable solution to produce poly-Si TFTs using a-Si TFT lines.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.8
• /
• pp.560-564
• /
• 2003

Thick oxide layer was fabricated by anodic reaction and complex oxidation performed by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and a RTO (rapid thermal oxidation) process (105$0^{\circ}C$, 1 min). Electrical characteristics of OPSL (oxidized porous silicon layer) were almost the same as those of thermal silicon dioxide prepared at high temperature. The leakage current through the OPSL of 20${\mu}{\textrm}{m}$ thickness was about 100 - 500 ㎀ in the range 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the XPS analysis, surface and internal oxide films of OPSL prepared by complex process were confirmed completely oxidized and also the role of RTO process was important for the densification of PSL (porous silicon layer) oxidized at low temperature.

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.1
• /
• pp.42-45
• /
• 2002

Properties of lead zirconate titanate ferroelectric thin films prepared by rapid thermal annealing/direct insertion thermal annealing were investigated. The remnant polarization (Pr), saturation polarization (Ps), and coercive force (Ec) of typical samples annealed by rapid thermal annealing (RTA) are about 13.7 $\mu$ C/cm$^2$, 27.1 $\mu$C/cm$^2$, and 55.6 kV/cm, respectively. The dielectric constant of the sample is about 786, the dielectric loss tangent is about 2.4% at 1 kHz. Furthermore, ferroelectric, conduction, and piezoelectric properties of the thin films annealed by RTA process and the direct insertion thermal annealing (DITA) process were compared. The influence of temperature in the dry process on the above properties was also investigated.

• Electrical & Electronic Materials
• /
• v.7 no.2
• /
• pp.152-156
• /
• 1994

The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

• Transactions of Materials Processing
• /
• v.15 no.1 s.82
• /
• pp.15-20
• /
• 2006

The rapid thermal response (RTR) molding is a novel process developed to raise the temperature of mold surface rapidly to the polymer melt temperature prior to the injection stage and then cool rapidly to the ejection temperature. The resulting filling process is achieved inside a hot mold cavity by prohibiting formation of frozen layer so as to enable thin wall injection molding without filling difficulty. The present work covers flow simulation of thin wall injection molding using the RTR molding process. In order to take into account the effects of thermal boundary conditions of the RTR mold, coupled analysis with transient heat transfer simulation is suggested and compared with conventional isothermal analysis. The proposed coupled simulation approach based on solid elements provides reliable thin wall flow estimation for both the conventional molding and the RTR molding processes.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.665-667
• /
• 2005

VIATRON TECHNOLOGIES has developed FE-RTP system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The system employs sequential heat treatment methods using temperature control and rapid thermal processor modules. The temperature control modules provide exceptionally uniform heating and cooling of the glass substrates to within ${\pm}2^a\;C$. The rapid thermal process that combines heating with field induction accelerates the treatment rates. The new FE-RTP system can process $730{\times}920mm$ glass substrates as thin as 0.4 mm. The uniform nature of poly-Si films produced by FE-RTP resulted in AMOLED panels with no laser-Muras. Furthermore, FE-RTP system also showed superior performances in other heat treatment processes involved in poly-Si TFT fabrications, such as dopant activation, gate oxide densification, hydrogenation, and pre-compaction.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.9
• /
• pp.1060-1067
• /
• 1988

In this paper, we have investigated the effects of rapid thermal process on the electrical and structural properties of silicon films. It was shown that required times and temperature for the successful activation of dopants (Boron, Phosphorus:5E15atoms/cm\ulcorner were above 1000\ulcorner, 10sec, respectively. The typical resistivities of films deposited below 600\ulcorner were in the range of 1.0 E-3ohm-cm which was 20-30% lower than that of initially polycrystalline silicon depositd above 600\ulcorner. After rapid thermal process at high temperature above 1000\ulcorner, the films did not reveal any change in resistivity due to the dopant segregation, and better electrical conductivity could be obtained by increasing the process time. The grain growth by RTA treatment was more salient in the case of the doped amorphous than that of initially polycrystalline. The surface of the films also preserved the higher structural perfection and surface smoothness.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2005.09a
• /
• pp.9-12
• /
• 2005

The rapid thermal response (RTR) molding is a novel process developed to raise the temperature of mold surface rapidly to the polymer melt temperature prior to the injection stage and then cool rapidly to the ejection temperature. The resulting filling process is achieved inside a hot mold cavity by prohibiting formation of frozen layer so as to enable thin wall injection molding without filing difficulty. The present work covers flow simulation of thin wall injection molding using the RTR molding process. In order to take into account the effects of thermal boundary conditions of the RTR mold, coupled analysis with transient heat transfer simulation is suggested and compared with conventional isothermal analysis. The proposed coupled simulation approach based on solid elements provides reliable thin wall flow estimation fur both the conventional molding and the RTR molding processes

• Proceedings of the KIEE Conference
• /
• 1988.07a
• /
• pp.375-378
• /
• 1988

In this paper a newly designed rapid thermal process (RTP) structure is proposed to the slip induced in silicon wafers considerably. The reflectors and a graphite radiation were used to compensate the temperature difference causing slip in silicon wafers. From our experiments it is known that slip can be removed during a rapid thermal annealing at high temperature.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.10a
• /
• pp.55-59
• /
• 2004

Recently, life cycle and lead-time of products have been shortened with the demand of customers. Therefore, it is important to reduce time and cost at the step of manufacturing trial molds. In order to realize three dimensional shape on CAD, the machining process has been widely used because it offers practical advantages such as precision and versatility. However, traditional machining process spends a lot of time in cutting product and the remained material causes trouble such as inconvenience for clean. In this work, a new machining process using the hot tool has been proposed to overcome those limitations. In the process, the hot tool moves the predetermined path and the heat of the tool decomposes the remained material. In order to set up the process, the hot tool to satisfy requirements is designed and the material thermal properties are obtained using the DSC and TGA machine. The relationships between process parameters and thermal radius of the tool are obtained through experiment.