• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.101-102
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• 2006

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant, It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the sell-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS). respectively. The removal rate of BTO thin film using the $BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%.

• 한국재료학회지
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• 제27권1호
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• 한국자기학회지
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• 제16권3호
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• pp.186-191
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• 2006

자기터널접합 기반의 MRAM(magnetic random access memory)은 자기저항효과를 응용하는 메모리소자로서 비휘발성과 고속 정보처리가 가능할 뿐만 아니라 고집적화 할 수 있는 차세대 통합형 비휘발성 메모리이다. 그러나 기존의 메모리 소자들에 비해 스위칭 산포가 크고, 기록마진(writing margin)이 확보되지 않아 아직까지는 고집적화가 어려운 실정이다. 최근 포화자화가 낮은 NiFeSiB 및 CoFeSiB과 같은 비정질 강자성체를 자기터널접합의 자유층 재료로 사용하여 스위칭 자기장의 거대화를 크게 감소시켜 MRAM의 기록마진을 높이는 연구결과에 관해 정리하여 보았다. 그리고 이러한 물질을 이용하여 자기터널접합의 재생마진(reading margin)과 관련된 터널자기저항비의 인가전압의존성을 저감시킬 수 있었다. 본고에서는 나노자기소자 기술의 중요한 분야인 MRAM의 기술발전 방향과 연구사례를 소개하고자 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.186-186
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• 2013

Nitrogen doped Ge-Sb-Te (N-GST) thin films for phase change random access memory (PRAM) applications were investigated by synchrotron-radiation-based x-ray photoelectron spectroscopy and absorption spectroscopy. Nitrogen doping in GST resulted in more favorable N atoms' bonding with Ge atoms rather than with Sb and Te atoms [1,2], which explains the higher phase change transition temperature than that of undoped Ge-Sb-Te thin film. Surprisingly, it was noticed that N atoms also existed in the form of molecular nitrogen, $N_2$, which is detrimental to the stability of the GST performance [3]. N-doped GST experimental features were also supported by ab-initio molecular dynamic calculations [2]. References [1] M.-C. Jung, Y. M. Lee, H.-D. Kim, M. G. Kim, and H. J. Shin, K. H. Kim, S. A. Song, H. S. Jeong, C. H. Ko, and M. Han, "Ge nitride formation in N-doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 91, 083514 (2007). [2] Zhimei Sun, Jian Zhou, Hyun-Joon Shin, Andreas Blomqvist, and Rajeev Ahuja, "Stable nitride complex and molecular nitrogen in N doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 93, 241908 (2008). [3] Kihong Kim, Ju-Chul Park, Jae-Gwan Chung, and Se Ahn Song, Min-Cherl Jung, Young Mi Lee, Hyun-Joon Shin, Bongjin Kuh, Yongho Ha, Jin-Seo Noh, "Observation of molecular nitrogen in N-doped Ge2Sb2Te5", Appl. Phys. Lett. 89, 243520 (2006).

• Journal of Information Science Theory and Practice
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• 제4권1호
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• pp.49-64
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• 2016

What government does/fails to do is conveyed to the public largely by records and information of various types in the public service, without which there will be no government. When records are poorly managed, much time is involved in sorting and locating needed information from large volumes of records. The rate of records misplaced or lost from which useful information for decision making is usually obtained makes it difficult to provide concise and up-to-date records of both past and present operations, raising the challenge of effective record-keeping. Thus this study examined records management practices in selected local government councils in Ogun State, Nigeria, adopting the descriptive survey research method using questionnaires for data collection. Its population comprised 415 records of personnel in the selected councils, of which 208 were sampled using simple random technique. From the 208 copies of the questionnaire administered on the registry personnel, 150 copies were useable, with a 72.12% response rate. Descriptive statistics were used for the analysis. The results indicated a prevalence of paper as the dominant medium for recording/conveying information in the councils with most of these being either in active state, semi-active, and vital and were kept and maintained in the registry, while in-active records were kept in the records store. Storage facilities for record-keeping were insufficient. Security measures against unauthorized access to records were by restrictions and subject users to managerial clearance. The study concluded that council records were in chaos and recommended the formulation of coherent records management policy, adequate budgetary provision, and adequate finance.

• Journal of information and communication convergence engineering
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• 제8권4호
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• pp.437-442
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• 2010

Ubiquitous mobile computing is becoming easier and more attractive in this ambient technological Internet world. However, some portable devices such as Personal Digital Assistant (PDAs) and smart phones are still encountering inherent constraints of limited storages and computing resources. To alleviate this problem, we develop a cost-effective protocol, iATA to transfer ATA commands and data over TCP/IP network between mobile appliances and stationary servers. It provides mobile users a virtual storage platform which is physically resided at remote home or office. As communications are made through insecure Internet connections, security risks of adopting this service become a concern. There are many reported cases in the history where attackers masquerade as legitimate users, illegally access to network-based applications or systems by breaking through the poor authentication gates. In this paper, we propose a mutual authentication and secure session termination scheme as the first and last defense steps to combat identity thief and fraud threat in particular for iATA services. Random validation factors, large prime numbers, current timestamps, one-way hash functions and one-time session key are deployed accordingly in the scheme. Moreover, we employ the concept of hard factorization problem (HFP) in the termination phase to against fraud termination requests. Theoretical security analysis discussed in later section indicates the scheme supports mutual authentication and is robust against several attacks such as verifiers' impersonation, replay attack, denial-of-services (DoS) attack and so on.

• 한국정보처리학회논문지
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• 제4권3호
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• pp.649-658
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• 1997

휘발성 메모리를 이용하는 데이터베이스 관리 시스템은 시스템 고장에 대비한 데이타 보호를 위한 회복 기능을 가진다. 이러한 회복 기능은 트랜잭션 처리를 위한 시스템 의 부담을 가중시키고 있으며 시스템 성능 저하의 주요 요인이 되고 있다. 최근 반도체 기술의 발달로 인하여 비휘발성 메모리가 등장하게 되었고, 비휘발성 메모리인 FeRAM(Ferroelectronic Random Access Memory)을 이용하여 데이타베이스 관리시스템 이 안고 있는 트랜잭션 처리 및 회복을 위한 부담을 감소시키는 연구가 계속되고 있다.그러나 기존의 이중면 FeRAM 데이터베이스 특성인 작은 단위 로킹을 제공하지 못하는 문제를 가진다. 본 논문에서는을 해결하기 위해 이중면FeRAM(Dual plane FeRAM:DFeRAM)의 구조를 제안한다 또한 이중면FeRAM을 적용한 시스템에 대해 그림자 페이지 기법을 기반으로 하는 회복 알고리즘을 제안하고 제안된 기법과 기존 기법과의 성능을 분석한다.

• 한국통신학회논문지
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• 제35권6B호
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• pp.948-953
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• 2010

본 논문에서는 슈퍼스칼라 구조를 가진 시스템의 명령어 캐시에서 효율적으로 소프트오류를 검출할 수 있는 기법을 제안한다. 명령어 캐시로 주로 사용되는 고속 정적 RAM(Random Access Memory)에 적용할 수 있으며 1D 패리티와 인터리빙을 통해 기존 기법들과 비교하여 더 적은 메모리 오버헤드로 연집오류를 검출할 수 있다. 정적 RAM에서는 소프트오류의 발생만을 확인하고 검출된 소프트오류의 정정은 명령어 캐시의 캐시 미스와 같이 처리하여 하위 메모리로부터 명령어들을 다시 인출하는 방식이다. 이를 통해 명령어 캐시의 성능에 영향을 주지 않으면서 연집오류를 검출하고 정정할 수 있으며 최대 4$\times$4의 윈도우 내에서 발생된 연집오류를 검출 할 수 있다. 제안된 방식을 이용하면 256비트 $\times$ 256비트 크기의 메모리에서 기존의 4-way 인터리빙 기법에서 검출에 필요한 패리티 크기의 25%만으로도 동일한 4비트의 연집오류를 검출 할 수 있다.

• Transactions on Electrical and Electronic Materials
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• 제5권6호
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• pp.223-226
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• 2004

The PZT thin films are one of well-known materials that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_{4}/(Cl_{2}+Ar)$ plasma and investigated improvement in etching damage by $O_{2}$ annealing. The maximum etch rate of the PZT thin films was 157 nrn/min and that the selectivity of the PZT thin films to Pt was 3.1 when $CF_{4}(30{\%})$ was added to a $Cl_{2}(80{\%})/Ar(20{\%})$ gas mixing ratio. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_{2}$ atmosphere. After $O_{2}$ annealing, the remanent polarization of the asdeposited films was $34.6{\mu}/cm^{2}$ and the sample annealed at 650, 550, and $450^{\circ}C$ was 32.8, 22.3, and $18.6{\mu}/cm^{2}$, respectively. PZT thin films with $O_{2}$ annealing at $450^{\circ}C$ retained $77{\%}$ of their original polarization at 106 cycles. Also as the annealing temperature increased, the fatigue properties improved. And the leakage current was decreased gradually and almost recovered to the as-deposited value after the annealing at $450^{\circ}C$.