• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.7
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• pp.8-13
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• 2009

Plasma enhanced chemical vapor deposition (PECVD) is commonly used for Carbon nanotubes (CNTs) fabrication, and the process can easily be applied to industrial production lines. In this works, we developed novel magnetized radio frequency PECVD system for one line process of CNTs fabrication for charge storable electrode application. The system incorporates aspects of physical and chemical vapor deposition using capacitive coupled RF plasma and magnetic confinement coils. Using this magnetized RF-PECVD system, we firstly deposited Fe layer (about 200[nm]) on Si substrate by sputter method at the temperature of 300[$^{\circ}$] and hence prepared CNTs on the Fe catalyst layer and investigated fundamental properties by scanning electron microscopy (SEM) and Raman spectroscopy (RS). High-density, aligned CNTs can be grown on Fe/Si substrates at the temperature of 600[$^{\circ}$] or less.

• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.73-76
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• 2016

Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.190-193
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• 2012

Transparent diamond-like carbon (DLC) films were synthesized on glass using radio frequency plasma enhanced chemical vapor deposition method from the gas mixture of $CH_4$, $SiH_4$ and Ar. The pressure, the rf-power, $CH_4/SiH_4/Ar$ ratio, and the deposition time were 0.1Torr, 100W, 20 : 1 : 1, and 20 min, respectively. The optical transmittances of DLC-deposited glass and uncoated glass were compared with each other in the visible light regions. The DLC-deposited glass showed transmittance of approximately 83 % and 95 % as compared to the uncoated glass for the wavelength of 380 nm and 500 nm, respectively. The hardness and roughness of DLC-coated glass have been measured by nanoindentation and AFM, respectively. The DLC-coated glass showed a little less or similar optical transmittance compared to the uncoated glass, while the hardness of DLC-coated glass was 2.5 times higher than that of the uncoated glass. The deposited DLC film had the very smooth surface and was thicker than 150 nm after deposition for 20 min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1010-1013
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• 2006

Hydrogenated Diamond-like carbon (DLC) films were Prepared by the radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method on silicon substrates using methane $(CH_4)$ and hydrogen $(H_2)$ gas for the application to solid lubricant of MEMS devices. We have checked the influence of varying RF power on tribological properties of DLC film. We have checked their performance as two kinds of method such as FFM (Friction Force Microscope) and BOD (Ball-on Disk) measurement. The friction coefficients and the contact number of cycles to steady state decreased as the increase of RF power with FFM and BOD measurement, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.88-88
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• 2018

DLC(Diamond Like Carbon) 박막은 높은 열전도도, 큰 전기저항, 높은 강도 등의 다이아몬드와 유사한 특성을 가지고 있으면서 저온 저압에서도 합성이 가능하고, 합성 조건에 따라 물리 화학적 특성도 넓게 조절 할 수 있으며 상대적으로 넓은 면적에서 균일하고 평활한 박막의 합성이 가능하여 산업적 응용 면에서도 경쟁력을 갖추고 있다[1]. 이러한 DLC 박막을 합성함에 있어서 RF-PECVD(Radio Frequency Plasma Enhanced Chemical Vapor Deposition) 방법은 PECVD 방법 중 가장 보편적으로 사용되고 또 캐패시터 타입의 RF-PECVD 방법은 균일한 대면적 증착과 대량생산이 가능하다[1,2]. 본 연구에서는 우수한 특성을 갖는 DLC 박막의 증착 조건을 찾기 위해 캐패시터 타입의 RF-PECVD를 사용하여 공정 가스의 유량과 RF Power를 변화하여 박막을 증착하고, 증착된 박막의 특성을 연구하였다. DLC 박막은 ITO(Indium Tin Oxide) 유리 기판 위에 $100^{\circ}C$에서 5 min 동안 아세틸렌($C_2H_2$) 가스를 사용하여 가스 유량과 RF Power를 변화하여 증착하였다. 증착된 DLC 박막의 특성은 투과도, 평탄도, 두께를 측정하여 비교하였다. 가시광선 영역(380-780 nm)에서 투과도를 측정한 결과 ITO 유리 기판을 기준으로 한 DLC 박막의 투과도는 가시광선 영역 평균 94.8~98.8% 사이의 값으로 매우 높은 투과율을 나타내었다. 투과도는 가스 유량이 증가함에 따라 증가하는 경향을 나타내었고, RF Power의 변화에는 특정한 변화를 나타내지 않았다. 박막의 평탄도($R_a$, $R_{rms}$)와 두께는 AFM(Atomic Force Microscope)을 사용하여 측정하였다. 평탄도 $R_{rms}$는 0.8~3.3 nm, $R_a$는 0.6~2.5 nm 사이를 나타내었고 RF Power와 가스 유량의 변화에 따른 경향성을 나타내지는 않았다. 두께는 RF Power 25 W에서 55 W로 증가함에 따라 증가하는 경향을 나타내었으나 70W에서는 가스의 유량에 따라 상이한 결과를 나타내었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Tribology and Lubricants
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• v.22 no.3
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• pp.127-130
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• 2006

DLC (Diamond Like Carbon) films show very desirable surface interactions with high hardness, low friction coefficient, and good wear-resistance properties. The friction behavior of hydrogenated DLC film is dependent on tribological environment, especially surrounding temperature. In this work, the tribological behaviors of DLC (Diamond-like carbon) films, prepared by the radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method, were studied in elevated temperatures. The ball-on-disk tests with DLC films on steel specimens were conducted at a sliding speed of 60 rpm, a load of 10N, and surrounding various temperatures of $25^{\circ}C,\;40^{\circ}C,\;55^{\circ}C\;and\;75^{\circ}C$. The results show considerable dependency of DLC tribological parameters on temperature. The friction coefficient decreased as the surrounding temperature increased. After tests the wear tracks of hydrogenated DLC film were analyzed by optical microscope, scanning electron spectroscopy (SEM) and Raman spectroscopy. The surface roughness and 3-D images of wear track were also obtained by an atomic force microscope (AFM).

• Journal of the Korean Solar Energy Society
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• v.33 no.2
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• pp.11-17
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• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.293-293
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• 2010

Carbon nanotubes (CNTs) have attracted considerable attention as possible routes to device miniaturization due to their excellent mechanical, thermal, and electronic properties. These properties show great potential for devices such as field emission displays, CNT based transistors, and bio-sensors. The metals such as nickel, cobalt, gold, iron, platinum, and palladium are used as the catalysts for the CNT growth. In this study, diamond-like carbon (DLC) was used for CNT growth as a nonmetallic catalyst layer. DLC films were deposited by a radio frequency (RF) plasma-enhanced chemical vapor deposition (RF-PECVD) method with a mixture of methane and hydrogen gases. CNTs were synthesized by a hot filament plasma-enhanced chemical vapor deposition (HF-PECVD) method with ammonia (NH3) as a pretreatment gas and acetylene (C2H2) as a carbon source gas. The grown CNTs and the pretreated DLC filmswere observed using field emission scanning electron microscopy (FE-SEM) measurement, and the structure of the grown CNTs was analyzed by high resolution transmission scanning electron microscopy (HR-TEM). Also, using energy dispersive spectroscopy (EDS) measurement, we confirmed that only the carbon component remained on the substrate.