• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.12
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• pp.1243-1250
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• 2014

In this paper, a wideband DDS module covering the frequency range from 0.5 to 1.1 GHz was designed and fabricated. The clock frequency of the DDS was selected 2.4 GHz in order for 600 MHz output bandwidth. Multiple spurious cancelling signals having same amplitude and $180^{\circ}$ phase difference compared to the spurious were created at the additional path and added to the output signal within DDS for the spurious performance improvement. The fabricated DDS module showed better spurious performance than the commercial DDS one more than 10 dB and frequency tuning time was 340 ns below.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• Journal of IKEEE
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• v.21 no.4
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• pp.338-347
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• 2017

This paper describes the design and fabrication of a high power amplifier which is a component of TDL(Tactical Data Link) aircraft terminal. We applied high-speed frequency hopping technology, cognitive radio technology, and receive filter bank technology to efficiently use limited frequency resources with radar and other communication equipment using the same frequency band. The high-power amplifier is physically composed of a transmitter, a receiver, a mechanical part, and a cable assembly, and is designed to meet temperature characteristics and electrical characteristics such as maximum transmission distance and reception sensitivity. Modeling and simulator were used to satisfy the requirement of high power amplifier. The transmit power and the noise figure were measured at 50.02dBm and 2.682dB, respectively. It was confirmed that all the required specifications were satisfied in the electrical characteristics test and the environmental characteristic test.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.7
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• pp.784-790
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• 2012

In this paper, an all-digital CMOS ultra-wideband(UWB) pulse generator for high band(6~10 GHz) frequency range is presented. The pulse generator is designed and implemented with extremely low power and low complexity. It is designed to meet the FCC spectral mask requirement by using Gaussian pulse shaping circuit and control the center frequency by using CMOS delay line with shunt capacitor. Measurement results show that the center frequency can be controlled from 4.5 GHz to 7.5 GHz and pulse width is 1.5 ns and pulse amplitude is 310 mV peak to peak at 10 MHz pulse repetition frequency(PRF). The circuit is implemented in 0.13 um CMOS process with a core area of only $182{\times}65um^2$ and dissipates the average power of 11.4 mW at an output buffer with 1.5-V supply voltage. However, the core consumes only 0.26 mW except for output buffer.

• Journal of The Korean Astronomical Society
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• v.56 no.2
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• pp.213-224
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• 2023

Type II solar radio bursts show frequency drifts from high to low over time. They have been known as a signature of coronal shock associated with Coronal Mass Ejections (CMEs) and/or flares, which cause an abrupt change in the space environment near the Earth (space weather). Therefore, early detection of type II bursts is important for forecasting of space weather. In this study, we develop a deep-learning (DL) model for the automatic detection of type II bursts. For this purpose, we adopted a 1-D Convolution Neutral Network (CNN) as it is well-suited for processing spatiotemporal information within the applied data set. We utilized a total of 286 radio burst spectrum images obtained by Hiraiso Radio Spectrograph (HiRAS) from 1991 and 2012, along with 231 spectrum images without the bursts from 2009 to 2015, to recognizes type II bursts. The burst types were labeled manually according to their spectra features in an answer table. Subsequently, we applied the 1-D CNN technique to the spectrum images using two filter windows with different size along time axis. To develop the DL model, we randomly selected 412 spectrum images (80%) for training and validation. The train history shows that both train and validation losses drop rapidly, while train and validation accuracies increased within approximately 100 epoches. For evaluation of the model's performance, we used 105 test images (20%) and employed a contingence table. It is found that false alarm ratio (FAR) and critical success index (CSI) were 0.14 and 0.83, respectively. Furthermore, we confirmed above result by adopting five-fold cross-validation method, in which we re-sampled five groups randomly. The estimated mean FAR and CSI of the five groups were 0.05 and 0.87, respectively. For experimental purposes, we applied our proposed model to 85 HiRAS type II radio bursts listed in the NGDC catalogue from 2009 to 2016 and 184 quiet (no bursts) spectrum images before and after the type II bursts. As a result, our model successfully detected 79 events (93%) of type II events. This results demonstrates, for the first time, that the 1-D CNN algorithm is useful for detecting type II bursts.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.6
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• pp.661-670
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• 2013

In this paper, we propose the measurement techniques of mixed waveform. Mixed waveform has phase-continuous periodic waveform with fixed frequency signal and Linear Frequency Modulation(LFM) signal. This waveform is generated from a compact radar transmitter with frequency synthesizer and high power amplifier. Frequency synthesizer generates various signal waveform with continuos phase and high power amplifier amplify transmitting signal. First, we describe a compact radar transmitter with the phase-continuos signal and then verify the distortion characteristic of pulse compression by the mismatch of LFM waveform. Second, we describe three kinds of measurement techniques for measuring LFM waveform. These techniques include methods using signal analyzer, signal source analyzer and new methods using RF mixer and phase shifter. Finally, we verify the accuracy of the measurement technique from the pulse compression result of receiving signal.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37A no.10
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• pp.885-894
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• 2012

Currently, Demand of data traffic has rapidly increased by popular of smart device. It is very difficult to accommodate demand of data traffic by limited resource of base station (BS). To solve this problem, method has proposed that the Device-to-Device (D2D) reduce frequency overload of the BS and all of the user equipment (UE) inside the BS and neighbor BS don't allow communicating directly to BS. However, in LTE-Advance system cellular link and sharing radio resources of D2D link, the strong interference of the cellular network is still high. So we need to eliminate or mitigate the interference. In this paper, we use the transmission power control method and Soft Frequency Reuse (SFR) resource allocation method to mitigate the interference of the cellular link and D2D link. Simulation results show that the proposed scheme has high performance in terms of Signal to Noise Ratio (SINR) and system average throughput.

• Analytical Science and Technology
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• v.15 no.3
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• pp.236-242
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• 2002

A method was investigated to determine the thickness of coating on steel sheet using rf glow discharge atomic emission spectrometer. The RF gas-jet boosted glow discharge has such salient feature as good pleasure stability and high sputtering efficiency that it was possible to determine the thickness of silicon resin film on zinc electroplated steel. The erosion speed variation is dependent on discharge power, gas flow rate and discharge pressure. therefore determine discharge condition to measure the thickness of coating on steels. The fundamental studies have been carried out to investigate an optimum condition for in-depth analysis and composition of zinc coating on steel. In this study, the calibration curve for thickness determination of silicon resin film was found to be linear in the range of $1000{\sim}3500mg/m^2$ film thickness. The developed rf gas-jet boosted glow discharge was applied to the analysis of zinc coating and silicon resin film on steel made by RIST.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.683-693
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• 2011

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz~10 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.166-176
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• 2007

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.