• Nuclear Engineering and Technology
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• v.36 no.3
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• pp.229-236
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• 2004

Radiation hardening is a multiscale phenomenon involving various processes over a wide range of time and length. We present a multiscale model for estimating the amount of radiation hardening in pressure vessel steel in the environment of a light water reactor. The model comprises two main parts: molecular dynamics (MD) simulation and a point defect cluster (PDC) model. The MD simulation was used to investigate the primary damage caused by displacement cascades. The PDC model mathematically formulates interactions between point defects and their clusters, which explains the evolution of microstructures. We then used a dislocation barrier model to calculate the hardening due to the PDCs. The key input for this multiscale model is a neutron spectrum at the inner surface of reactor pressure vessel steel of the Younggwang Nuclear Power Plant No.5. A combined calculation from the MD simulation and the PDC model provides a convenient tool for estimating the amount of radiation hardening.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.11
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• pp.490-492
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• 2005

A study on radiation hardening of infrared(IR) detector, the chief component of IR camera was performed. The radiation test on IR sensor passivated with the ZnS by Co$^{60}$ gamma-ray over 1 Mrads showed the reduction in Ro by 1/100 which was related to the noise level. This effect that was caused by carrier trapping in the ZnS passivation layer increased the leakage current and resulted in degradation in the device performance. For the radiation hardening of IR devices we suggested the ones with CdTe passivation layer which had a tendency to reluctant to carrier trapping in its layer and developed test patterns. Radiation test to the patterns showed that the our CdTe passivated device could survived over 1 Mrad gamma-ray dose.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.745-752
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• 2018

ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.

• Journal of Institute of Control, Robotics and Systems
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• v.20 no.6
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• pp.625-630
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• 2014

Asynchronous digital circuits working in military and space environments are often subject to the adverse effects of radiation faults. In this paper, we propose a new hardening technique against radiation faults. The considered digital system has the structure of DMR (Double Modular Redundancy), in which two sub-systems conduct the same work simultaneously. Based on the output feedback, the proposed scheme diagnoses occurrences of radiation faults and realizes immediate recovery to the normal behavior by overriding parts of memory bits of the faulty sub-system. As a case study, the proposed control scheme is applied to an asynchronous dual ring counter implemented in VHDL code.

• ETRI Journal
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• v.29 no.1
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• pp.124-126
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• 2007

In this letter, we study the impact of single event upsets (SEUs) in space or defense electronic systems which use memory devices such as EEPROM, and SRAM. We built a microcontroller test board to measure the effects of protons on electronic devices at various radiation levels. We tested radiation hardening at beam current, and energy levels, measured the phenomenon of SEUs, and addressed possible reasons for SEUs.

• Journal of Korean Society of Forest Science
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• v.87 no.4
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• pp.601-610
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• 1998

This study was carried out to investigate the possibility of supplemental UV-B application to the hardening phase of container-grown Betula platyphylla seedlings. The containerized seedlings were grown in a growth chamber for four months and then treated with UV-B(UV-$B_{BE}$ $3.2KJ\;m^{-2}\;day^{-1}$ and $5.2KJ\;m^{-2}\;day^{-1}$) radiation and water stress regime(irrigation in one week interval) for four weeks. The differences in growth and physiological responses of the seedlings before and after the treatments were analyzed. UV-B radiation and water stress reduced height growth and leaf dry mass accumulation of the seedlings. The root collar diameter growth was reduced by UV-B radiation but increased by water stress. The reduction in leaf dry weight by UV-B radiation and water stress reduced T/R ratio of the seedling. The reduction in T/R ratio was the most apparent by water stress. Chlorophyll index observed by a chlorophyll meter was the lowest in the $5.2KJ\;m^{-2}\;day^{-1}$ of UV-B radiation, and those in the $3.2KJ\;m^{-2}\;day^{-1}$ and water stress were similar. UV-B radiation and water stress reduced both water content in the seedlings and leaf water potential, and increased leaf osmatic pressure. The water content of leaves and shoots was reduced more rapidly by UV-B radiation than by water stress treatment. In conclusion, growth responses and physiological changes in water relation by supplemental UV-B radiation which was applied to the hardening phase of container-grown Betula platyphylla seedlings were similar results to the water stress treatment.

• Journal of Semiconductor Engineering
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• v.1 no.3
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.493-494
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• 2005

• Proceedings of the Korean Nuclear Society Conference
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• 2003.10a
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• pp.367.2-367.2
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• 2003

• Nuclear Engineering and Technology
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• v.38 no.7
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• pp.619-638
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• 2006

Low temperature irradiation can significantly harden metallic materials and often lead to strain localization and ductility loss in deformation. This paper provides a review on the radiation effects on the deformation of metallic materials, focusing on microscopic and macroscopic strain localization phenomena. The types of microscopic strain localization often observed in irradiated materials are dislocation channeling and deformation twinning, in which dislocation glides are evenly distributed and well confined in the narrow bands, usually a fraction of a micron wide. Dislocation channeling is a common strain localization mechanism observed virtually in all irradiated metallic materials with ductility, while deformation twinning is an alternative localization mechanism occurring only in low stacking fault energy(SFE) materials. In some high stacking fault energy materials where cross slip is easy, curved and widening channels can be formed depending on dose and stress state. Irradiation also prompts macroscopic strain localization (or plastic instability). It is shown that the plastic instability stress and true fracture stress are nearly independent of irradiation dose if there is no radiation-induced phase change or embrittlement. A newly proposed plastic Instability criterion is that the metals after irradiation show necking at yield when the yield stress exceeds the dose-independent plastic instability stress. There is no evident relationship between the microscopic and macroscopic strain localizations; which is explained by the long-range back-stress hardening. It is proposed that the microscopic strain localization is a generalized phenomenon occurring at high stress.