• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.7-7
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• 2009

Lead telluride (PbTe) is a very promising thermoelectric material due to its narrow band gap (0.31 eV at 300 K), face-centered cubic structure and large average excitonic Bohr radius (46 nm) allowing for strong quantum confinement within a large range of size. In this work, we present the thermoelectric properties of individual single-crystalline PbTe nanowires grown by a vapor transport method. A combination of electron beam lithography and a lift-off process was utilized to fabricate inner micron-scaled Cr (5 nm)/Au (130 nm) electrodes of Rn (resistance of a near electrode), Rf (resistance of a far electrode) and a microheater connecting a PbTe nanowire on the grid of points. A plasma etching system was used to remove an oxide layer from the outer surface of the nanowires before the deposition of inner electrodes. The carrier concentration of the nanowire was estimated to be as high as $3.5{\times}10^{19}\;cm^{-3}$. The Seebeck coefficient of an individual PbTe nanowire with a radius of 68 nm was measured to be $S=-72{\mu}V/K$ at room temperature, which is about three times that of bulk PbTe at the same carrier concentration. Our results suggest that PbTe nanowires can be used for high-efficiency thermoelectric devices.

• 한국초전도ㆍ저온공학회논문지
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• 제23권2호
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• pp.1-5
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• 2021

We have investigated the electrical transport properties of polycrystalline tantalum nitride (TaN_x) films. Various compositions of tantalum (nitride) thin films have been deposited on SiO₂ substrates by reactive DC magnetron sputtering while changing the ratio of nitrogen partial pressure. The substrate temperature was maintained at 283 K during deposition. X-ray diffraction analyses indicated the presence of α-Ta and β-Ta phases in the Ta film deposited in pure argon atmosphere, while fcc-TaN_x phases appeared in the sputtering gas mixture of argon and nitrogen. The N/Ta atomic ratio in the film increased ranging from 0.36 to 1.07 for nitrogen partial pressure from 7 to 20.7%. The superconducting transition temperatures of the TaN_x thin films were measured to be greater than 3.86 K with a maximum of 5.34 K. The electrical resistivity of TaN_x thin film was in the range of 177-577 𝜇Ωcm and increased with an increase in nitrogen content. The upper critical filed at zero temperature for a TaN_0.87 thin film was estimated to exceed 11.3 T, while it showed the lowest T_c = 3.86 K among the measured superconducting TaN_x thin films. We try to explain the behavior of the increase of the residual resistivity and the upper critical field for TaN_x thin films with the nitrogen content by using the combined role of the intergrain Coulomb effect and disorder effect by grain boundaries.

• Journal of the Optical Society of Korea
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• 제1권2호
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• pp.116-119
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• 1997

Highly quantum efficient and multi-color emissible polymer light emitting devices have been realized utilizing poly (1-dodecyloxy-4-methyl-1, 3-phenylene)(2, 5"-terthienylene)(hereafter, mPTTh polymer) as an emitting layer and tris(8-hydroxyquinoline) aluminum (Alq3) as an electron transport layer. A single layer EL device of mPTTh polymer emits orange-colored light. EL efficiency increases as the thickness of Alq3 layer increases, but the emission color becomes visually broad when the Alq3 layer thickness is greater than 30nm since the relative peak intensity of green EL from Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer increases. EL efficiency of the double layer device was greatly enhanced by 3000 times compared with that of a single layer device. Alq3 layer in device acts as a hole blocking electron transporting layer and an emitting layer as a function of the thickness of Alq3 layer.ayer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.889-892
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• 2003

Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.47-47
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• 2009

The formation of variable one-dimensional structures including core/shell structure is of particular significance with respect to potential applications for thermoelectric devices with the enhanced figure of merit ($ZT=S2{\sigma}T/{\kappa}$). We report the fabrication of Bi-Te core/shell nanowire based on a novel stress induced method. Fig. 1 schematically shows the nanowire fabrication process. Bi nanowires are grown on the Si substrate by the stress-induced method, and then Te is evaporated on the Bi nanowires. Fig. 2 is a transmission electron microscopy image clearly showing a core/shell structure for which effective phonon scattering and quantum confinement effect are expected. Electrical conductivity of the core/shell nanowire was measured at the temperatures from 4K to 300K, respectively. Our results demonstrate that Bi-Te core/shell nanowire can be grown successfully by the stress-induced method. Based on the result of electrical transport measurement and characteristic morphology of rough surface, Seebeck coefficient and thermal conductivity of Bi-Te core/shell nanowires are presented.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1609-1611
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• 2002

Multi-layer organic electroluminescent(EL) devices with Al-CsF composite as a cathode were fabricated. This device privides low driving voltage and high quantum efficiency. CsF is evaporated onto and diffuse into electron transport layer. $Alq_3$. The Fermi level of $Alq_3$ moves towards the LUMO level.

• Progress in Superconductivity
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• 제3권2호
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• pp.213-217
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• 2002

We have fabricated successfully single-filament composite $MgB_2$/SUS tapes, as an ultrarobust conductor type. The fabrication of the $MgB_2$/SUS tapes was performed by power-in-tube (PIT) process such as swaging and cold rolling. The critical transition temperatures $T_{c}$~38.5 K and ~36 K were observed for the sintered and the nonsintered $MgB_2$/SUS tapes, respectively In addition, the isothermal magnetization M(H) of the sintered $MgB_2$/SUS tapes was measured at temperatures T (between 5 and 50 K) in fields up to 6 T, employing a PPMS-9 (Quantum Design). The persistent current density (J$T_{P}$) values were obtained from the M(H) data, using Bean model, fur the sintered $MgB_2$/SUS tapes. The estimated values were higher than ~ 6$\times$ $10^{5}$ $A/\textrm{cm}^2$ at T = 5 K, with H : 0 G. We also investigated the cross section of the sintered tapes, by using SEM and EDX. An evidence of weak reaction on boundary between $MgB_2$ and SUS tube is found in the SEM and EDX.X.X.X.

• 한국재료학회지
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• 제13권8호
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• Nuclear Engineering and Technology
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• 제55권9호
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• pp.3506-3513
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• 2023

In this paper, we demonstrate the neutron attenuation of dry cask shielding materials using the S670e helium-4 detector manufactured by Arktis Radiation Ltd. In particular, two materials expected to be applied to the TN-32 dry cask manufactured by ORANO Korea and KORAD-21 by the Korea Radioactive Waste Agency (KORAD) were utilized. The measured neutron attenuation was compared with our Monte Carlo N-Particle Transport simulation results, and the difference is given as the root mean square (RMS). For the fast neutron case, a rapid decline in neutron counts was observed as a function of increasing material thickness, exhibiting an exponential relationship. The discrepancy between the experimentally acquired data and simulation results for the fast neutron was maintained within a 2.3% RMS. In contrast, the observed thermal neutron count demonstrated an initial rise, attained a maximum value, and exhibited an exponential decline as a function of increasing thickness. In particular, the discrepancy between the measured and simulated peak locations for thermal neutrons displayed an RMS deviation of approximately 17.3-22.4%. Finally, the results suggest that a minimum thickness of 5 cm for Li-6 is necessary to achieve a sufficiently significant cross-section, effectively capturing incoming thermal neutrons within the dry cask.

• 한국가시화정보학회지
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• 제22권2호
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• pp.63-73
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• 2024

The injection of polymer can significantly reduce drag, particularly in the turbulent flow region where the mutual interaction between the polymer and turbulent vortices occurs. In this study, Taylor-Couette flow of PEO-in-water solutions with a rotating inner cylinder was analyzed. Despite the shear-thinning behaviour of PEO-in-water solutions being well-documented, for a given range of shear rates their viscosity remains nearly constant. By varying the polymer concentration, we analyzed the torque evolution of different solutions followed by the viscoelasticity effects of the polymer on the interphase transition points. The torque was analyzed using a dimensionless torque scaling method, which allows for the assessment of the fluid's momentum transport capabilities. It was observed that for low concentrations of PEO, the flow behaviour exhibited only minor differences in comparison to that of water, the Newtonian fluid. However, once the PEO concentration exceeded the polymer overlap concentration, the flow behaviour was significantly altered.