• Journal of Electrochemical Science and Technology
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• v.7 no.3
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• pp.185-189
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• 2016

The coupled channel method via the Local Reflection (LORE) matrix is employed to investigate the quantum mechanical behavior of the sticking or adsorption and desorption of hydrogen (H) atom on bilayer graphene via the armchair edge. The sticking and desorption probabilities of H are calculated and are plotted against the initial translational energy of H. The sticking probability plot shows a barrierless reaction indicating that hydrogen is easily adsorbed on the armchair edge of graphene. The desorption probability plot, however, shows that desorption of H from the graphene sheets is an activated process with a barrier height of 4.19 eV suggesting that a strong bond exists between the adsorbed H atom and the edge carbon atom. Thus, temperatures higher than the operating temperatures (300 - 1500 K) of conventional fuel cells are necessary to release the adsorbed H atom from the armchair edge of graphene.

• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.211-214
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• 2009

A new porous silicon (PSi) microcavity sensor for the detection of volatile organic compounds (VOCs) was developed. PSi microcavity sensor exhibiting unique reflectivity was successfully obtained by an electrochemical etching of silicon wafer. When PSi was fabricated into a structure consisting of two high reflectivity muktilayer mirrors separated by an active layer, a microcavity was formed. This PSi microcavity is very sensitive structures. Reflection spectrum of PSi microcavity indicated that the full-width at half-maximum (FWHM) was of 10 nm and much narrower than that of fluorescent organic molecules or quantum dot. The detection of volatile organic compounds (VOCs) using PSi microcavity was achieved. When the vapor of VOCs condensed in the nanopores, the refractive indices of entire particle increased. When PSi microcavity was exposed to acetone, ether, and toluene, PSi microcavity in reflectivity was red shifted by 28 nm, 33 nm, and 20 nm for 2 sec, respectively.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.54-55
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• 2001

Recently, there has been much interests in InGaN/GaN multiple-quantum-well (MQW) structures due to their applicability as optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes [1]. Their ultrafast and physical properties are also of significant interests. Anomalously large acoustic phonon oscillations have been observed using ultrafast lasers in InGaN MQWs [2]. In this study, we have peformed femtosecond pump-probe experiments in the reflection geometry on 5 periods InGaN/GaN MQW LED structure with well width of 20$\AA$ and barrier width of 100$\AA$ at room temperature. (omitted)

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.112.1-112.1
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• 2011

The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

• Journal of the Korean Professional Engineers Association
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• v.34 no.2
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• pp.57-61
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• 2001

There has never been a point in tine as the $20^{th}$ century where mankind has faced various Issues. During the past century, the human race has come to believe that the law of nature can be substituted by the development of science and technology. Scientists have worked on the atomic bomb and mainpulated the structure of the DNA. The $20^{th}$ century is a special landmark In human history. The various privileges that we are entitled to now are all the products of this century. The world population has Increased from 600 million In the 18u century to 900 million In the 19a century. This was larger due to the advance of science and technology during the 20u century. At this speed, it is anticipated that It will reach 30 billion by the end of the century. From a political perspective. there was turmoil. From an economic perspective, there were quantum leaps. The significant development of science and technology has enhanced the quality of human life. The $21^{st}$ century now awaits us. Things like memory cells and brain transplants may be realized and nuclear fusion may happen In the near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.662-666
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• 2005

Silicon nitride $(SiN_x)$ film is a promising material for anti-reflection coating and passivation of multicrystalline silicon (me-Si) solar cells. In this work, a plasma-enhanced chemical vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust $SiN_x$ films for screen-printed mc-Si solar cells. The Gas flow ratio, $R=[SiH_4]/[NH_3]$, in a mixture of silane and ammonia was varied in the range of 0.0910.235 while maintaining the total flow rate of the process gases to 4,200 sccm. The refractive index of the $SiN_x$ film deposited with a gas flow ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas flow ratio increased to 0.235. The highest efficiency of the cell was $14.99\%$ when the flow rate of $SiH_4$ was 350 sccm (R=0.091). Generally, we observed that the efficiency of the mc-Si solar cell decreased with increasing R. From the analysis of the reflectance and the quantum efficiency of the cell, the decrease in the efficiency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of $SiH_4$ during the deposition of $SiN_x$ films.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.314.2-314.2
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• 2014

To improve the optical and electrical properties of commercialized GaN-based light-emitting diodes (LEDs), many methods are suggested. In recent years, great efforts have been made to improve the internal quantum efficiency and light extraction efficiency (LEE) and promising approaches are suggested using a patterned sapphire substrate (PSS), V-pit embedded LED structures, and silica nanostructures. In this study, we report on the enhancement of photoluminescence (PL) intensity in GaN-based LED structures by using the combination of SiO2 (silica) nanospheres and polystyrene/SiO2 core-shell nanospheres. The SiO2 nanospheres-coated LED structure shows the slightly increased PL intensity. Moreover the polystyrene/SiO2 core-shell nanospheres-coated structure shows the more increase of PL intensity comparing to that of only SiO2 spheres-coated structure and the conventional structure without coating of nanospheres. The Finite-difference time-domain (FDTD) simulation results show corresponding result with experimentally observed results. The mechanism of enhancement of PL intensity using the coating of polystyrene/SiO2 core-shell nanospheres on LED surface can be explained by the improvement in extraction efficiency by both increasing the probability of light escape by reducing Fresnel reflection and by multiple scattering within the core-shell nanospheres.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.602-602
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• 2012

TCAD simulation을 이용하여 국부적 후면 접촉 구조를 가지는 단결정 실리콘 태양전지구조를 형성하고 실리콘 기판과 후면 passivation막 사이의 계면 특성 변화에 따른 태양전지의 전기적, 광학적 특성 변화에 대해서 연구하였다. 상기 연구를 진행하기 위하여 process simulator를 이용하여 후면에 국부적인 doped BSF region을 형성하고 device simulator를 이용하여 실리콘 기판과 후면 passivation막 사이의 carrier recombination 특성을 변화시켜 태양전지의 광학적, 전기적 특성을 분석하였다. Carrier recombination velocity의 감소에 따라 국부적 후면 접촉구조를 갖는 태양전지의 특성이 증가하는 것으로 관찰되었다. 이는 후면에서 실리콘과 박막 사잉의 결함이나, dangling bond에 의해서 carrier들이 재결합하는 확률이 줄어듦과 동시에, 후면 전극에서 carrier를 수집할 수 있는 확률이 커지기 때문이며, 800 nm 이상의 장파장영역 광원이 후면 passivation 박막에 의한 reflection으로 이차적인 carrier generation으로 인한 영향으로 판단되며 quantum efficiency 분석으로 규명하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.601-601
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• 2012

본 연구는 Zr이 doping된 ITO target (ITO:Zr)을 $200^{\circ}C$ 이하의 낮은 온도에서 RF magnetron sputtering을 이용한 증착으로 high mobility, high workfunction의 TCO 박막을 제작하고 이를 실리콘 이종접합 태양전지의 front TCO 적용에 관한 연구이다. 상기 공정으로 제작된 ITZO 박막의 가장 낮은 비저항은 $2.58{\times}10-4{\Omega}-cm$이며 이때의 투과도는 90%를 얻을 수 있었다. 또한 기존의 TCO로 사용되던 AZO 및 ITO보다 높은 work function으로 인하여 태양전지의 front TCO 적용시 710 mV 이상의 개방 전압 상승과 band-offset 감소에 따른 34.44 mA 이상의 단락전류 상승을 얻을 수 있었다. 또한 높은 mobility에 의한 면저항 감소로 충진률 상승도 얻을 수 있었다. 상기 인자에 대한 태양전지 특성의 변화는 quantum efficiency 분석으로 규명할 수 있었다.

• Korean Journal of Optics and Photonics
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• v.12 no.4
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• pp.251-256
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• 2001

The influences of decorrelation on phase sensitivity are studied with a computer simulation based on the Bayesian theorem, when correlated photons produced by parametric down-conversion are incident on a Mach-Zehnder interferometer. Although the down-converted photons show a perfect correlation in the production process, this degree of correlation may be decreased by reflection, absorption, and scattering during propagation. It is found that this decorrelation results in phase sensitivity degradation, and that the sensitivity is related to the detector quantum efficiency. The results show that when the phase difference between the two paths is smaller the phase sensitivity is better. etter.