• Journal of the Korean Society of Food Culture
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• 제8권3호
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• pp.249-255
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• 1993

To minimize the waste amount of surface layer kochujang during aging, the effects of the three finishing methods(nothing, salt scatering and Polyethylene film on the kochujang surface) and sunning(conventional aging method) or nonsunning aging(cap covering) on water content, redness and spreadability, film forming yeast occurance and salinity of surface layer kochujang during 120 days aging were investigated. In the case of sunning aging, film forming yeast was not visually found on the surface. The surface layer kochujang was so low spreadability(zero) and very high salinity(18-30%) that could not eat. However, the aging method after PE-film covering on the kochujang surface, and then cap covering(nonsunning) was very effective in keeping of soundness of surface layer kochujang without film forming yeast growth on the surface kochujang, especially was greatly effective in keeping of redness, moderate moisture content and spreadability. The PE-film and cap covering aging were effective in prevention of water evaporation and $CO_2$ release, and in accumulation of ethanol and organic acids between the PE-film and surface layer of kochujang.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 한국소성가공학회 1999년도 제3회 압연심포지엄 논문집 압연기술의 미래개척 (Exploitation of Future Rolling Technologies)
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• pp.412-422
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• 1999

Scale defects generated on the strip surface in a tandem finishing mill line are collected from the strip trapped among the production mills by freezing the growing scale on the strip by the melt glass coating and shutting down the line simultaneously. The samples observed of its cross sectional figure showed the process of scale defect formation where the defects are formed at the base metal surface by thicker oxidized scale during each rolling passes. The properties of the oxidized layer growth both at rolling and inter-rolling are detected down sized rolling test simulating carefully the rolling condition of the production line. The thickness of the oxidized layer at each rolling pass are simulated numerically. The critical scale thickness to avoid the defect formation is determined through the expression of mutual relation between oxidized layer thickness and the lanks of the strip called quality for the scale defects. The scale growth of scale less than the critical thickness and also to keep the bulk temperature tuning the water flow rate and cooling time appropriately. Two units of Inerstand Cooler are designed and settled among the first three stands in the production line. Two units of scale defect is counted from the recoiled strip and the results showed distinct decrease of the defects comparing to the conventionaly rolled products.

• Journal of the Korean institute of surface engineering
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• 제39권1호
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• pp.9-12
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• 2006

Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.

• Korean Journal of Materials Research
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• 제27권8호
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• pp.403-408
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• 2017

We investigated the effect of ZnO buffer layer on the formation of ZnO thin film by ultrasonic assisted spray pyrolysis deposition. ZnO buffer layer was formed by wet solution method, which was repeated several times. Structural and optical properties of the ZnO thin films deposited on the ZnO buffer layers with various cycles and at various temperatures were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. The structural investigations showed that three-dimensional island shaped ZnO was formed on the bare Si substrate without buffer layers, while two-dimensional ZnO thin film was deposited on the ZnO buffer layers. In addition, structural and optical investigations showed that the crystalline quality of ZnO thin film was improved by introducing the buffer layers. This improvement was attributed to the modulation of the surface energy of the Si surface by the ZnO buffer layer, which finally resulted in a modification of the growth mode from three to two-dimensional.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Journal of Korean Society for Quality Management
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• 제13권1호
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• pp.26-30
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• 1985

In the light of the properties of colloids, in the surface of disperse phase and dispersion, there exist specific characters such as adsorption or electric double layer, which seems to play important roles in determining the physiochemical properties in the dyeing system. Nylon, wool and silk, the typical amphoteric fibers were dyed with Acid dye and various combinations were prepared by combining pH, temperature and dye concentration, in order to generate flowing electric potential which were measured by microviolt meter and specific conductivity meter. The results were transformed to Zeta potential by Helmholtz-Smoluchowski formular and to surface electric charge density by Suzawa formular, surface dye amount, and effective surface area of fibers, and these data were statistically analysed by principle component analysis.

• Membrane Journal
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• 제31권1호
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• pp.80-85
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• 2021

In this study, we developed an evaporation-driven self-assembly coating method for an ceramic intermediate layer on an ultrapermeable ��-Al2O3 support with large pore size of ~1.5 ㎛. The method led to the formation of a ceramic intermediate layer with higher surface homogeneity and less surface roughness than the conventional dip-coating method. A mesoporous ��-Al2O3 layer was deposited on the support to evaluate support quality. A supported ��-Al2O3 membrane was defect-free even without repeated coating. Furthermore, the membrane showed 2.3 times higher nitrogen permeance than one prepared on a macroporous support with pore size range of 100~200 nm, which is widely used for ceramic membrane coating.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.142-142
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• 2017

High Flory-Huggins interaction parameter (${\chi}$)를 가지는 polystyrene-block-dimethylsiloxane (PS-b-PDMS)는 초미세 패턴 제작과 우수한 defect density, 우수한 edge roughness 특성으로 향상된 패턴을 제공한다는 점에서 반도체 분야에서 많은 연구가 되고 있다. 하지만, PS와 PDMS 사이에 존재하는 큰 surface tension의 차이로 인해 PDMS는 PS와 air 사이에서 segregate되기 때문에 수직배향에 불리하여 high aspect ratio (HAR)을 가지는 cylinder, lamellar 패턴 제작에 있어 큰 어려움을 가진다. 본 연구에서는 이러한 문제를 해결하기 위해, PS-b-PDMS BCP 패턴과 하부 실리콘 기판 사이에 amorphous carbon layer (ACL)를 삽입하여 효과적으로 pattern transfer하는 공정을 연구하였다. 플라즈마를 이용하여 무한대에 가까운 etch selectivity를 가지는 식각 공정을 개발함으로써 낮은 aspect ratio를 가지는 PS-b-PDMS BCP 패턴의 한계점을 극복하였다. Large-x value를 가지는 BCPs를 이용하여도 매우 높은 aspect ratio를 가지면서 동시에 pattern quality를 향상시킬 수 있는 plasma process를 제시하였다.

• Journal of the Korean Society of Food Culture
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• 제7권4호
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• pp.297-301
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• 1992

To investigate effects of the surface finishing methods (A : conventional press stone, B : enclosing in polyethylene (PE) bag, C : press-tone wrapped with PE film and D : covered with Chinese cabbage leaves 4cm in thickness on Kimchi) on Kimchi quality, pH-values, redness, film forming yeast growth, hardness and sensory quality of Kimchi during storage (for 60 days, at $10{\pm}5^{\circ}C$) in glass vessel $(11{\times}30cm)$ were investigated. pH of the top layer of A, C and D sample were higher than the optimum pH (4.2) of Kimchi, film forming yeast occurred on the surface of Kimchi, color of top layer Kimchi juice was darkened, and panel score of freshness and firmness was significantly worse (p<0.01) than that of sample B. However, in the case of Kimchi stored in PE bag (B), film forming yeast were can't detected visually in the surface of Kimchi, pH values were low as good quality Kimchi, freshness and firmness panel scores and hardness were significantly better (p<0.01) than A, C and D, and redness of juice of top layer of B was also preserved clearly for 60 days. Accordingly among the four surface finishing methods, the B-method was most effective in preserving of y of Kimchi.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제30권1호
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.