• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.388-396
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• 2010

In this study, we propose characteristics improvement methods according to via hole plating method for FBAR Duplexer with bandwidth($T_x4: 1850 MHz ~ 1910 MHz, $R_x$:1930 MHz ~ 1990 MHz) which is used for wireless systems. Also, we designed and fabricated $3.8{\times}3.8{\times}1.8mm$ size microminiature FBAR Duplexer based on this proposal. First of all, in this study, we fabricated pentagon shape resonators by different size to make filter combination, and their quality factor(Q) are 687 with 6.6% of ${k_{eff}}^2$. Using this resonators, we designed $3{\times}2$ Type $T_x$ filter and $3{\times}4$ Type $R_x$ filter. The transmission line, which works as phase shifter, is designed with 210 ${\mu}m$ in width and 18 mm in length Stripline type. Inductor, which is used for matching component, is designed with width of 75 ${\mu}m$, a technically achievable minimum width. And adopted plating method of filling via hole with conductive epoxy for improved grounding and thermal conductivity. Using these configuration with all of the matching component values, we found Duplexer characteristics of -1.57 dB ~ -1.73 dB in insertion loss, -56 dB in attenuation at 1850 MHz ~ 1910 MHz of $T_x$ band. Also, found -2.71 dB ~ -3.23 dB in insertion loss, -58 dB in attenuation at 1930 MHz ~ 1990 MHz of $R_x$ band.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2000년도 종합학술발표회 논문집 Vol.10 No.1
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• pp.125-129
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• 2000

In this paper, We designed and fabricated C-band bandpass filter using dielectric resonators. From waveguide cutoff frequency which applied the region between adjacent dielectric resonators, the height of cavity is determined. The cavity's diameter is determined to the twice of dielectric resonator's diameter considering the conductor loss. The resonant frequency of the DR-cavity is calculated with travelling wave mode analysis. Conventionally, circular cylindrical dielectric resonator is analysed by Cohn's model which use the evanescent mode in the region between dielectric resonator wall and circular cavity wall, which is an approximated method. The external quality factor, Q$_{ex}$ has found with simulation result using Ansoft's Maxwell simulation tool. The designed filter using dielectric resonators with dielectric constant of 45 has the passband center at 5.065GHz. The bandpass filter using dielectric resonators have about 1dB insertion loss. 20MHz bandwidth and more than 30dB attenuation at f$_{0}$$\pm$15MHz.z.z.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1244-1245
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• 2008

Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

• 한국재료학회지
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• 제11권1호
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• pp.39-43
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• 2001

Nanocrystalline Fe-Sm-O thin films were prepared by RF magnetron reactive sputtering method in $Ar+O_2$mixed atmosphere with the $O_2$content of 5%. The compositions of the thin films were changed by changing the number of $Sm_2O_3$ chips. The best soft magnetic properties of the thin film with the composition of $Fe_{83.4}Sm_{3.4}O_{13.2}$ were saturation flux density of 18 kG, coercivity of 0.82 Oe and effective permeability about 2,600 at 0.5~100 MHz, respectively. The electrical resistivity of Fe-Sm-O thin films was increased with increasing the amount of Sm and O elements which combined each other, the electrical resistivity of$Fe_{83.4}Sm_{3.4}O_{13.2}$ thin film was $130{\mu}{\Omega}cm$. In case of the small amount of Sm and O elements, the microstructures of Fe-Sm-O thin films showed a precipitated phase of $Sm_2O_3$ on the ${\alpha}-Fe$ phase. With the increase of the amount of Sm and O elements, the microstructures of the Fe- Sm-O thin films were changed into a mixed structure of ${\alpha}-Fe$ crystal-phase and Sm-oxide amorphous phase. The Fe-Sm-O thin films with Fe content in the range of 72~94 at% exhibited the quality factor (Q = $\mu$′/$\mu$") of 7~75 up to 50 MHz.

• 한국세라믹학회지
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• 제54권2호
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• pp.150-157
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• 2017

Three types of piezoelectric single crystals [PMN-PT (Generation I $[Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3]$), PMN-PZT (Generation II $[Pb(Mg_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3]$), PMN-PZT-Mn (Generation III)] were grown by the solid-state single crystal growth (SSCG) method, and their dielectric and piezoelectric properties were measured and compared. Compared to (001) PMN-PT and PMN-PZT single crystals, the (001) PMN-PZT-Mn single crystals exhibited a higher transition temperature between the rhombohedral and tetragonal phases ($T_{RT}=144^{\circ}C$), as well as a higher coercive electric field ($E_C=6.3kV/cm$) and internal bias field ($E_I=1.6kV/cm$). The (011) PMN-PZT-Mn single crystals showed the highest coercive electric field ($E_C=7.0kV/cm$), and the highest stability of $E_C$ and $E_I$ during 60 cycles of polarization measurement. These results demonstrate that both Mn doping (for higher electromechanical quality factor ($Q_m$)) and a (011) crystallographic orientation (for higher coercive electric field and stability) are necessary for high power transducer applications of these piezoelectric single crystals. Specifically, the (011) PMN-PZT-Mn single crystal (Gen. III) had the highest potential for application in the fields of SONAR transducers, high intensity focused ultrasound (HIFU), ultrasonic motors, and others.

• 한국전자파학회논문지
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• 제23권4호
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• pp.515-523
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• 2012

본 논문에서는 구형 유전체 위에 있는 구형 패치의 전파 특성으로서 공진 특성과 방사 특성을 분석하였다. 공진 주파수와 Q를 계산하여 특정 모드의 공진 특성을 해석하였으며, 원거리에서의 전기장을 계산하여 방사 특성을 해석하였다. 구형 유전체의 해석을 위해 스펙트럴 영역 해석법(spectral domain analysis method)를 적용하였으며, Vector Legendre transform pair와 Galerkin's method를 이용하여 스펙트럴 영역으로 변환한 후 대수식으로 정리하여 효율적인 계산을 할 수 있었으며, 이를 통해 구형 패치의 반지름이나 곡률, 유전체의 특성이 구형 패치의 특성에 미치는 영향을 해석하였다.

• 한국자기학회지
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• 제6권6호
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• pp.367-374
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• 1996

자기소자중 가장 기본이 되는 박막인덕터의 제작에 관한 연구를 수행하기 위하여, photolitho-graphy와 에칭공정을 도입하고, 도체간격 및 도체폭이 수십 $\mu\textrm{m}$, 도체코일 턴수가 각각 13회와 20회, 크기가 $4\;mm{\times}4\;mm$인 공심형 박막인덕터를 제작하였다. 이것을 마이크로스트립선로에 정착하고, network analyzer로 주파수 1 MHz ~ 1 GHz에서 신호의 반사계수법을 이용하여 간편하고 비교적 정확한 측정을 하였다. 특히, 공정이 간단한 습식 에칭공정을 도입하여, 안정된 에칭기술을 통해 양호한 미세패턴구조를 얻었다. 박막인덕터의 특성은, 크기가 같을때, L 및 Q값은 spiral형이 meander형 보다 큰 값을 갖는 반면, 공진주파수는 인덕턴스의 증가에 의한 영향으로 spiral형이 meander형보다 감소하였다.

• 대한전자공학회논문지
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• 제27권11호
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• pp.9-19
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• 1990

원통형 및 환형 유전체공진기의 복소유전율과 투자율을 측정하기 위한 이론적인 해석과 측정방법을 제시하였다. 두 개의 평면도체 사이에 유전체공진기를 놓고 공진주파수와 무부하 Q, 그리고 치수를 측정하면 복소유전율과 투자율을 구할 수 있으며 이 방법을 고차모우드에 대하여 반복적으로 행하면 더 넓은 주파수 범위에서 측정이 가능하다. 이 때 각각의 공진모우드는 유전체공진기의 방위각과 축방향에 대한 전계 세기의 변화를 측정함으로써 결정할 수 있다. 그리고 여러가지 오차의 요인들을 고려한 측정오차의 해석으로부터 $TE_{0np}$ 또는 quasi-TE 모우드를 측정에 이용할 경우 복소유전율의 실수부분은 $0.5{\%}$, 허수부분은 $4{\%}$ 이내의 측정오차를 가짐이 밝혀졌다.

• 한국재료학회지
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• 제16권11호
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• pp.705-709
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• 2006

Nb was doped to Pb-free $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) by a solid state mixing process to form $(Bi_{0.5}Na_{0.5})Ti_{1-x}Nb_xO_3\;(x=0{\sim}0.05)$ (BNTNb) and its doping effects on ferroelectric and piezoelctric properties of BNT were investigated. The BNTNb solid solutions were formed up to x=0.01 with no apparent second phases while grain sizes decreased. As x increased, coercive field ($E_c$) and mechanical quality factor ($Q_m$) decreased but piezoelectric constant ($d_{33}$) increased, which indicates Nb acts as a donor for BNT.