• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.427-433
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• 2006

We have fabricated nanodot arrays by using phase separated (PS- b- PMMA) diblock copolymer film and anodic aluminum oxide (AAO) membrane as templates with hexagonal arrays of cylindrical microdomains perpendicular to the substrate. Pulsed laser deposition technique was used to deposit various kinds of materials including Ag, Ni, ZnO, Si:Er, and Co/Pt onto Si substrates. The size and separation of nanodots correspond to those of the templates used, The density of nanodots was estimated to be $6{\times}10^{11}/cm^2$ and $1{\times}10^{10}/cm^2$ when the diblock copolymer and AAO were used, respectively. In particular, the optical properties of ZnO and Si: Er nanodot arrays were investigated and the strong photoluminescence at 380 nm and $1.54{\mu}m$ was observed from ZnO and Si:Er nanodot arrays, respectively.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.258-263
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• 2012

Fe-diluted Si alloys grown on p-type Si (100) substrates by pulsed-laser deposition method were studied for structural, electrical, and magnetic properties. The X-ray diffraction patterns for these alloy samples showed a few of peaks with cubic structures such as FeSi, $Fe_3Si$, and $Fe_4Si$. The Fe-composition in alloys are confirmed as Fe atomic percent about 1.25~6.49 % from energy dispersive spectroscopy measurement. The resistivity as a function of the reciprocal temperature was indicated an exponential increase with two activation energies of 5.21 and 7.79 meV. The maximum value of the magnetization at 10 K was about 100 emu/cc, and the ferromagnetism was also observed until 350 K from total magnetization as a function of temperature with applied magnetic field of 3,000 Oe.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.75-81
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• 2010

The feasibility of using the thin film technology in utilizing lanthanum strontium manganite (LSM) for a solid oxide fuel cell (SOFC) cathode in a low-temperature regime is investigated in this study. Thin film LSM cathodes were fabricated using pulsed laser deposition (PLD) on anode-supported SOFCs with yttria-stabilized zirconia (YSZ) electrolytes. Although cells with a 1 ${\mu}m$-thick LSM cathode showed poor low-temperature cell performance compared to that of a cell with a bulk-processed cathode due to the lack of a triple-phase boundary length, the cell with 200 nm-thick gadolinia-doped ceria (GDC) inserted between the LSM and YSZ showed enhanced performance and more stable operation characteristics in a comparison of a cell without a GDC layer. We postulate that the GDC layer likely improved the cathode adhesion, therefore contributing to the improvement of the cell performance instead of serving as an interfacial reaction buffer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.717-722
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• 2012

In this work, we study on the effects of the oxygen pressure on the structural and crystalline of MgZnO thin films. MgZnO thin films were deposited on p-Si (111) substrates by using pulsed laser deposition. The X-ray diffraction analysis and energy-dispersive X-ray results revealed that as the oxygen pressure increased and Mg content in the MgZnO films decreased. Also Crystal structure was changed from cubic rock salt to hexagonal wurtzite. Alpha step and atomic force microscopy results showed that the thickness of the films are about 100 nm, and it has been found that the MgZnO (002) preferred orientation were deposited with increasing the oxygen pressure. Therefore, the effect of the preferred orientation, the crystallization grew in the form of the columnar; Grain size and RMS of the films were increased with increasing oxygen pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.211-215
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• 2010

Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.355-360
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• 1998

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$thin films of two different thickness (~250 $\AA$ and ~1340 $\AA$) on MgO(001) prepared by a pulsed laser deposition method were studied by synchroton x-ray scattering measurements. The film initially grew on MgO(001) with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became rough significantly, but the interface between the film and the substrate seemed to have changed little. In the early stage, the film was highly strained in a tetragonal structure with the longer axis parallel to the surface normal direction. As the growth proceeded further, it was mostly relaxed to a cubic structure with the lattice parameter of the bulk value and the mosaic distribution improved significantly in both in-plane and out-of-plane directions.

• Progress in Superconductivity and Cryogenics
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• v.26 no.3
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• pp.27-31
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• 2024

We fabricate high-entropy alloy (HEA) Ta_1/6Nb_2/6Hf_1/6Zr_1/6Ti_1/6 superconducting (SC) thin films via a pulsed laser deposition method. Two targets are prepared using arc melting, each followed by sintering at different temperatures: 550℃ and 700℃ for 12 hours. The films, HEA550 and HEA700, are deposited on c-cut Al₂O₃ substrates at a substrate temperature of 520℃, using the targets sintered at 550℃ and 700℃, respectively. The SC transition temperature (T_c) of HEA700 is 6.88 K, slightly higher than that of HEA550 (= 6.27 K). Both films exhibit similar upper critical field (H_c2) at 0 K, with 11.34 T for HEA550 and 11.40 T for HEA700. Notably, HEA700 exhibits a large critical current density (J_c) of approximately 4.4 MA/cm² and 3.5 MA/cm² at 2.0 K and 4.2 K, respectively, accompanying by a predominance of normal point pinning. These results indicate that the targets prepared by arc melting are beneficial for achieving a large J_c in HEA SC thin films, thus providing new avenues for improving SC critical properties of HEA thin films for their practical applications.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.173-176
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• 2004

Silicon thin films on p-type(100) silicon substrate have been prepared by a pulsed laser deposition(PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, silicon thin film has been annealed in nitrogen ambient. Strong blue photoluminescence(PL) has been observed at room temperature. We report the optical properties of silicon thin films with the variation of the deposition parameters.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.88-92
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• 2011

We grew $Zn_{0.4}Fe_{2.6}O_4$ thin films using Pulsed Laser Deposition and studied their crystal structure and magnetical characteristics as a function of growth temperature ($T_g$). For the film with $T_g=300^{\circ}C$, X-ray reflections from ${\alpha}-Fe_2O_3$ and ZnO were observed. However, when $T_g$ was increased from 300 to $500^{\circ}C$, crystal structure of inverse spinel was stabilized with the crystal orientation of $Zn_{0.4}Fe_{2.6}O_4(111)/Al_2O_3(0001)$ without any detection of ${\alpha}-Fe_2O_3$ and ZnO phases. The surface morphology shows flattening behavior with increasing $T_g$ from 300 to $500^{\circ}C$. These observations indicate that Zn is substituted into tetrahedron A-site of the inverse-spinel $Fe_3O_4$. M-H curves exhibit clear ferromagnetism for the sample with $T_g=500^{\circ}C$ whereas no ferromagnetism is observed for the film with $T_g=300^{\circ}C$.