• Journal of Industrial Technology
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• v.25 no.A
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• pp.141-149
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• 2005

We investigated numerically the evolutions of several chemical species which are important for film growth and particle generation in the pulsed $SiH_4$ plasmas. During the plasma-on, the $SiH_x$ concentration increases with time mainly by the generation reaction from $SiH_4$, but, during the plasma-off, decreases because of the hydrogen adsorption reaction. During the plasma-on, the concentrations of negative ions increase with time by the polymerization reactions of negative ions and those become almost zero in the sheath regions because of the electrostatic repulsion. During the plasma-off, the concentrations of negative ions decrease with time by the neutralization reactions with positive ions and some negative ions can diffuse toward the sheath regions because there is no electric field inside the reactor. The polymerized negative ions of higher mass can be reduced successfully by using the pulsed plasma process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.1
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• pp.24-29
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• 2004

$CF_4$ gas is one of the most useful gases in modern technologies for semiconductor fabrication. However, there are many problems which should be solved in order to fabricate semiconductor device, for example, etching speed drop due to ion charge-up and etching selectivity drop due to the high electron energy. One of useful method in order to suppress their damages above is pulsed-time modulated plasma (PM). However, transient responses of charged particles occur when the source power is turned-on and -off in PM method. To control plasma properties in detail, such a transient phenomenon must be investigated. In this paper, we investigate $CF_4$ RF plasma properties under a one-dimensional fluid model. And also for dynamic and stable control of $CF_4$ plasmas, we investigated the transient behavior of the plasmas after step up or down of the amplitude of the power source voltage $V_s$(t). Fundamental properties of transient $CF_4$ plasmas was discussed. Furthermore, we intend to discuss new method for pulsed-time plasma modulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.22-26
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• 2008

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present simulation, we adopt capacitively coupled plasma with asymmetrical electrodes. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.33-37
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• 2017

Single phase niobium nitride (NbN) coatings were deposited using asymmetric bipolar pulsed dc sputtering by varying pulse frequency and duty cycle of pulsed plasmas. Crystal structure, microstructure, morphology and mechanical properties were examined using XRD, FE-SEM, AFM and nanoindentation. Upon increasing pulse frequencies and decreasing duty cycles, the coating morphology was changed from a pyramidal-shaped columnar structure to a round-shaped dense structure with finer grains. Asymmetric bipolar pulsed dc sputtered NbN coatings deposited at pulse frequency of 25 kHz is characterized by higher hardness up to 17.4 GPa, elastic modulus up to 193.9 GPa, residual compressive stress and a smaller grain size down to 27.5 nm compared with dc sputtered NbN coatings at pulse frequency of 0 kHz. The results suggest that the asymmetric bipolar pulsed dc sputtering technique is very beneficial to reactive deposition of transition-metal nitrides such as NbN coatings.

• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.461-466
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• 2016

Nanocrystalline vanadium nitride (VN) coatings were deposited using asymmetric bipolar pulsed dc sputtering to further understand the influence of the pulsed plasmas on the crystal structure, microstructure and mechanical properties. Properties of VN coatings were investigated with FE-SEM, XRD and nanoindentation. The results show that, with the increasing pulse frequency and decreasing duty cycle, the coating morphology changed from a porous columnar to a dense structure, with finer grains. Asymmetric bipolar pulsed dc sputtered VN coatings showed higher hardness, elastic modulus and residual compressive stress than dc sputtered VN coatings. The results suggest that asymmetric bipolar pulsed dc sputtering technique is very beneficial for the reactive sputtering deposition of VN coatings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.15-19
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• 2006

A pulsed laser ablation deposition (PLAD) technique is an excellent method for the fabrication of amorphous carbon (a-C) films, because it can generate highly energetic carbon clusters on a substrate. This paper was focused on the understanding and analysis of the motion of C particles in laser ablation assisted by Ar plasmas. The simulation has carried out under the pressure P=50 mTorr of Ar plasmas. Two-dimensional hybrid model consisting of fluid and Monte-Carlo models was developed and three kinds of the ablated particles which are carbon atom (C), ion ($C^+$) and electron were considered in the calculation of particle method. The motions of energetic $C^+$ and C deposited upon the substrate were investigated and compared. The interactions between the ablated particles and Ar gas plasmas were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.96-100
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• 2006

A pulsed laser ablation deposition (PLAD) technique is an excellent method for the fabrication of amorphous carbon (a-C) films. This paper was focused on the understanding and analysis of the motion of carbon atom (C) and carbon ion ($C^+$) particles in laser ablation assisted by Ar plasmas. The simulation has carried out under the pressure P=10~100 mTorr of Ar plasmas. Two-dimensional hybrid model consisting of fluid and Monte-Carlo models was developed and three kinds of the ablated particles which are C, $C^+$ and electron were considered in the calculation of particle method. The motions of energetic $C^+$ and C deposited upon the substrate were investigated and compared.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.360-370
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• 2015

As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.41-45
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• 2006

The study on laser-ablation plasmas has been strongly interested in fundamental aspects of laser-solid interaction and consequent plasma generation. In particular, this plasma has been widely used for the deposition of thin solid films and applied to the semiconductors and insulators. In this paper, we developed and discussed the generation of carbon ablation plasmas emitted by laser radiation on a solid target, graphite. The progress of carbon plasmas by laser-ablation was simulated using Monte-Carlo particle model under the pressures of vacuum, 1 Pa, 10 Pa and 66 Pa. At the results, carbon particles with low energy were deposited on the substrate as the pressure becomes higher. However, there was no difference of deposition distributions of carbon particles on the substrate regardless of the pressure.

• Nuclear Engineering and Technology
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• v.6 no.4
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• pp.253-259
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• 1974

The output signal voltage of the pulsed ionization chamber (PIC) was measured for a range of electron density (10$^{13}$ -10$^{17}$ m$^{-3}$ ) of the 3He plasmas. This experimental data was in excellent agreement with the theory including space charge effects. As an application of the PIC techniques, two-body recombination coefficients were obtained with electron densities measured from output signal voltage of the PIC. These values as a function of pressure were in good agreement with theoretical predictions and ranged from 5$\times$10$^{-14}$ to 3$\times$10$^{-13}$ (㎥/sec) at 300$^{\circ}$K for 1 to 10 atmospheric $^3$He plasma.