• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.127-130
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• 2001

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films depending on the variation of the annealing temperature.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권3호
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• pp.103-108
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• 2005

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~700\;sccm$. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.75-78
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• 2002

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.67-69
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• 2004

The $Pb(Zr,Ti)O_3$ thin films were fabricated with $Pb(La,Ti)O_3$ buffers in-situ onto $Pt/Ti/SiO_2/Si$ substrates by pulsed laser deposition technique using a Nd:YAG laser with energy density of $2.5J/cm^2$, and deposited for 10 minutes at $550^{\circ}C$ of substrate temperature. And then, the films have been annealed at $550^{\circ}C$ in oxygen ambient pressure. The remanent polarization value is increased by using buffer layers but coercive field of films is slightly increased.

• 한국레이저가공학회지
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• 제5권2호
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• pp.31-38
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• 2002

This paper describes the process of nanoparticle synthesis by laser ablation of consolidated microparticles. We have generated nanoparticles by high-power pulsed laser ablation of Al, Cu and Ag microparticles using a Q-switched Nd:YAG laser (wavelength 355 nm, FWHM 5 ㎱, fluence 0.8∼2.0 J/㎠). Microparticles of mean diameter 18∼80 ㎛ are ablated in the ambient air The generated nanoparticles are collected on a glass substrate and the size distribution and morphology are examined using a scanning electron microscope and a transmission electron microscope. The effect of laser fluence and collector position on the distribution of particle size is investigated. The dynamics of ablation plume and shock wave is analyzed by monitoring the photoacoustic probe-beam deflection signal. Nanosecond time-resolved images of the ablation process are also obtained by laser flash shadowgraphy. Based on the experimental results, discussions are made on the dynamics of ablation plume.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2000년도 특별강연 및 추계학술발표대회 개요집
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• pp.268-270
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• 2000

• 한국광학회지
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• 제6권1호
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• pp.56-61
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• 1995

본 연구에서는 펄스형 고반복 Nd:YAG 레이저를 이용한 거리측정기의 설계 및 그에 따른 제작 성능을 기술하고자 한다. 제작 결과로 얻어진 측정 최대거리는 지상표적에 대하여 약 19km이다. 이 때 대기의 시정거리는 약 23km이다.

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.20-24
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• 2000

This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.

• 한국광학회지
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• 제18권1호
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• pp.66-73
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• 2007

레이저 분광용 고출력 파장가변 레이저로 이용할 Nd:YAG 레이저의 제 2조화파로 종여기한 평행평면형 공진기 구조의 펄스형 Ti:sapphire 레이저 발진기와 이를 이용한 단일경로 형태의 Ti:sapphire 레이저 증폭기의 출력특성을 조사하였다. 발진기의 경우에는 여기광의 에너지, 공진기 길이, 출력거울의 반사율을 변화시키면서 출력스펙트럼, 펄스 발생시간, 펄스폭, 출력에너지를 측정하였다. 그리고 증폭기의 경우, 발진기의 레이저 광과 증폭기 여기광이 증폭매질에 들어오는 시간차이, 그리고 발진기의 여기에너지와 증폭기의 여기에너지를 각각 변화시키면서 증폭기의 출력에너지를 측정하고 이를 분석하였다. 이 결과 발진기와 증폭기의 여기에너지가 18 mJ/pulse일 때 두 여기광의 시간차가 35 ns까지는 지속적으로 증폭기의 에너지가 증가했으며, 발진기의 여기광에 대한 증폭기의 기울기 효율은 23.5 %이고, 증폭기의 여기광에 대한 증폭기의 기울기 효율은 11.6 %였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2201-2203
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• 1999

In this study, we have designed and manufactured not a present elliptic cavity but a circular cavity and we have experimented the operational characteristics. As a result, we obtained the maximum efficiency of 2.1 %. It didn't have any difference compared with elliptic cavity. A circular cavity is much more compact, so far easier to be manufactured than a elliptic cavity. And it can be made at a low cost. At the input energy, parameter $\alpha$, input voltage, and pulse width were in the same condition, we have decided to the optimization of the mesh number of a parallel-mesh circuit which was connected with main power supply.