• Title/Summary/Keyword: pulsed DC magnetron sputtering

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Synthesis of IZTO(Indium Zinc Tin Oxide) particle by spray pyrolysis and post-heat treatment and characterization of deposited IZTO film

  • Lim, Seong Taek;Kim, Sang Hern
    • Journal of the Korean Applied Science and Technology
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    • v.33 no.4
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    • pp.734-740
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    • 2016
  • The micron-sized indium zinc tin oxide (IZTO) particles were prepared by spray pyrolysis from aqueous precursor solution for indium, zinc, and tin and organic additives such as citric acid (CA) and ethylene glycol (EG) were added to aqueous precursor solution for indium, zinc, and tin. The obtained IZTO particles prepared by spray pyrolysis from the aqueous solution without organic additives had spherical and filled morphologies, whereas the IZTO particles obtained with organic additives had more hollow and porous morphologies. The micron-sized IZTO particles with organic additives were changed fully to nano-sized IZTO particles, whereas the micron-sized IZTO particles without organic additives were not changed fully to nano-sized IZTO particle after post-treatment at $700^{\circ}C$ for 2 hours and wet-ball milling for 24 hours. Surface resistances of micron-sized IZTO's before post-heat treatment and wet-ball milling were much higher than those of nano-sized IZTO's after post-heat treatment and wet-ball milling. From IZTO with composition of 80 wt. % $In_2O_3$, 10 wt. % ZnO, and 10 wt. % $SnO_2$ which showed a smallest surface resistance IZTO after post-heat treatment and wet-ball milling, thin films were deposited on glass substrates by pulsed DC magnetron sputtering, and the electrical and optical properties were investigated.

Enhancement of Crystallinity in ZnO:Al Films Using a Two-Step Process Involving the Control of the Oxygen Pressure (산소 압력의 조절과 함께 두 번의 증착 과정을 이용한 ZnO:Al 박막에 결정성의 향상)

  • Moon, Tae-Ho;Yoon, Won-Ki;Lee, Seung-Yoon;Ji, Kwang-Sun;Eo, Young-Joo;Ahn, Seh-Won;Lee, Heon-Min
    • Journal of the Korean Vacuum Society
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    • v.19 no.2
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    • pp.128-133
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    • 2010
  • ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.