• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.484-488
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• 2001

The grid voltage of commercial utility power source hi Japan and USA is 100rms, but in China and European countries, it is 200rms. In recent years, In Japan 200Vrms out putted single phase three wire system begins to be used for high power applications. In 100Vrms utility AC power applications and systems, an active voltage clamped quasi-resonant Inverter circuit topology using IGBTs has been effectively used so far for the consumer microwave oven. In this paper, presented is a half bridge type voltage-clamped high-frequency Inverter type AC-DC converter using which is designed for consumer magnetron drive used as the consumer microwave oven in 200V utility AC power system. This zero voltage soft switching Inverter can use the same power rated switching semiconductor devices and three-winding high frequency transformer as those of the active voltage clamped quasi-resonant Inverter using the IGBTs that has already been used for 100V utility AC power source. The operating performances of the voltage source single ended push pull type Inverter are evaluated and discussed for consumer microwave oven. The harmonic line current components In the utility AC power side of the AC-DC power converter operating at ZVS­PWM strategy reduced and improved on the basis of sine wave like pulse frequency modulation and sine wave like pulse width modulation for the utility AC voltage source.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.36-39
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• 2000

The adaptive learning circuit is designed the basis of modeling of MFSFET (Metal-Ferroelectric-Semiconductor FET) and the numerical results is analyzed. The output frequency of the adaptive learning circuit is inversely proportioned to the source-drain resistance of MFSFET and the capacitance of the circuit. The output frequency modulation of the adaptive learning circuit is investigated by analyzing the source-drain resistance of MFSFET as functions of imput pulse numbers in the adaptive learning circuit and the dimensionality factor of the ferroelectric thin film. From the results, the frequency modulation characteristics of the adaptive learning circuit, that is, adaptive learning characteristics which means a gradual frequency change of output pulse with the progress of input pulse are confirmed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.6
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• pp.67-79
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• 1982

The stability of general pulse-width modulation system with Gaussian random disturbance was discussed . General system is divided into nonlinear and linear elements using the conventional describing function method. The concept of the equivalent admittance was used to find the transfer characteristic of the nonlinear element of the system. In this paper the self-sustained oscillation condition in the autonomous system was derived and the results was analyzed with computer simulation.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.179-185
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• 2005

This paper presents a novel circuit topology of a high efficiency single-phase power conditioner. This power conditioner is composed of time-sharing sinewave absolute pulse width modulated boost chopper with a bypass diode in the first power processing stage and time-sharing sinewave pulse width modulated full-bridge inverter in the second power processing stage operated by time-sharing dual mode pulse pattern control scheme. The unique operating principle of the two power processing stage with time-sharing dual mode sinewave modulation scheme is described with a design example. This paper proposes also a sinewave tracking voltage controlled soft switching PWM boost chopper with a passive auxiliary edge-resonant snubber. The new conceptual operating principle of this novel power conditioner related to new energy utilization system is presented and discussed through the experimental results.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.369-372
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• 2002

This paper presents a family of continuous conduction mode with constant-switching pulse width modulator controllers. Unified implementation of quasi steady state approach for various DC-DC converters topoiogies is illustrated. The property and control low for quasi-state approach will be discussed in this paper. The different procedures will be discussed in details with different results for five commonly used DC-DC converters. Both trailing and leading edge pulse width modulation are used. Leading edge modulation can some times lead to simpler control circuitry as will be demonstrated in some circuits. These controllers do not require the multiplier in the voltage feed back loop, error amplifier in the current loop and rectified line voltage sensor, which are needed by traditional control methods. Controller examples and design arc analyzed.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.30-34
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• 2008

In this paper, we analyze the performance of pulse position modulation-time hopping ultra wide band (PPM-TH UWB) systems with antenna diversity technique in indoor wireless channel. A modified Saleh and Valenzuela (SV) model is adopted as a UWB indoor channel model. Perfect synchronization between a transmitter and a receiver is assumed. Therefore, coherent equal gain combining (EGC) scheme to collect the energy available in the multipath components is investigated. It is shown that the performance is improved by increasing the number of antennas at the receiver. The results of this paper can be applied to the applications of UWB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.186-187
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• 2007

In this work, a temperature stable PWM(Pulse width modulation) circuit is proposed. The designed PWM circuit has a temperature dependent current source and a temperature independent voltage to compensate electrical characteristics with operating temperature. The variation of driving current is from about 4% to -6% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$ compared to the current at the room temperature. The variation of bandgap voltage reference is from about 1.3% to -0.2% with temperature when the supply voltage is 3.3 volts. From simulation results, the variation of output pulse width is less than from 0.86% to -0.38% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.71-74
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• 2003

The signal processing algorithm for a PSD(Position Sensitive Detector) using amplitude modulation/demodulation is addressed in this paper. Dark currents and external noises such as daylight and fluorescent lights are eliminated by using amplitude modulation/demodulation and a low pass filter. The proposed amplitude modulation/demodulation method for a PSD sensor is compared with pulse amplitude modulation method. The proposed amplitude modulation is proved to be more accurate and robust than PAM method by analysis and experiments. Multiple measurements using one PSD sensor by amplitude modulation/demodulation is also addressed. The Power variation of light source is compensated by normalization process using a divider.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.440-446
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• 2011

In this paper, a X-band 50 W pulsed solid state power amplifier(SSPA) is designed and fabricated for radar systems. The SSPA consists of a driver amplifier, a high power amplifier, and a pulse modulator. The high power stage employes four 25 W GaAs FET to deliver 50 W at X-band. To meet the stringent target specification for the SSPA, we used a new hybrid pulse switching method, which combine the advantage of pulse modulation and bias switching method. The fabricated SSPA shows a power gain of 44.2 dB, an output power of 50 W over a 1.12 GHz bandwidth. Also, pulse droop < 1 dB meet the design goals and a rise/fall time is less than 12.45 ns. Fabricated X-band pulsed SSPA size is compact with overall size of $150{\times}105{\times}30\;mm^3$.