• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.63-66
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• 2005

Nanoimprint lithography (NIL) process at room temperature has been newly proposed in recent years to overcome the shape accuracy and sticking problem induced in a conventional NIL process. Success of the room temperature NIL relies on the accurate understand of the mechanical behavior of the polymer. Since a conventional NIL process has to heat a polymer above the glass transition temperature to deform the physical shape of the polymer with a mold pattern, viscoelastic property of polymer have major effect on the NIL process. However, rate dependent behavior of polymer is important in the room temperature NIL process because a mold with engraved patterns is rapidly pressed onto a substrate coated with the polymer by the hydraulic equipment. In this paper, finite element analysis of the room temperature NIL process is performed with considering the strain rate dependent behavior of the polymer. The analyses with the variation of imprinting speed and imprinting pattern are carried out in order to investigate the effect of such process parameters on the room temperature NIL process. The analyses results show that the deformed shape and imprint force is quite different with the variation of punch speed because the dynamic behavior of the polymer is considered with the rate dependent plasticity model. The results provide a guideline for the determination of process conditions in the room temperature NIL process.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.11-14
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• 2007

Consumables used in Chemical Mechanical Polishing (CMP) have been played important role to improve quality and productivity. Since the properties of consumables constantly change with various reasons, such as shelf time, manufactured time, lot to lot variation from supplier and so on, CMP results are not constant during the process. Also, CMP process results are affected by multiple sources from wafer, conditioner, pad and slurry. Therefore, multiple sensing systems are required to monitor CMP process variation. In this paper, the authors focus on development of monitoring system for CMP process which consist of force, temperature and displacement sensor to measure the signal from CMP process. With monitoring systems mentioned above, complex CMP phenomena can be investigated more clearly.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.7
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• pp.158-166
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• 1996

In this study, a flexible disk grinding process is applied in order to produce high precision product. A new model was developed considering feed motion along horizontal and vertical direction. Different types of feed speed variation was tested with respect to distinct process stages in order to achieve flat surface. It was observed that highest order polynomial form for both horizontal and vertical feed speed variation among the proposed categories produced surface close to flat one. Disk deflection trend during the process was visualized confirming the proposed scheme. Cutting force and VRR(volume removal rate) was observed as an aid to process planning.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.824-831
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• 2014

In this study, structural variations and overlay errors caused by multiple patterning lithography techniques to print narrow parallel metal interconnects are investigated. Resistance and capacitance parasitic of the six lines of parallel interconnects printed by double patterning lithography (DPL) and triple patterning lithography (TPL) are extracted from a field solver. Wide parameter variations both in DPL and TPL processes are analyzed to determine the impact on signal propagation. Simulations of 10% parameter variations in metal lines show delay variations up to 20% and 30% in DPL and TPL, respectively. Monte Carlo statistical analysis shows that the TPL process results in 21% larger standard variation in delay than the DPL process. Crosstalk simulations are conducted to analyze the dependency on the conditions of the neighboring wires. As expected, opposite signal transitions in the neighboring wires significantly degrade the speed of signal propagation, and the impact becomes larger in the C-worst metals patterned by the TPL process compared to those patterned by the DPL process. As a result, both DPL and TPL result in large variations in parasitic and delay. Therefore, an accurate understanding of variations in the interconnect parameters by multiple patterning lithography and adding proper margins in the circuit designs is necessary.

• Transactions of Materials Processing
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• v.18 no.4
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• pp.290-295
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• 2009

The roll gap set-up in the finishing mill is one of the most important technologies in the hot plate rolling process. As the target thickness can be obtained by the correct set-up of the roll gap, improving the roll gap set-up technology is very critical for plate thickness accuracy. The main cause of thickness variation in hot plate mills is the non-uniform temperature distribution along the length of the slab. The objective of this study is to adjust the roll gap set-up for the thickness accuracy of plate in hot rolling process considering top-end temperature drop. Therefore this study has concentrated on determining the correct amounts of thickness variation according to top-end temperature drop and roll gap to compensate thickness variation. The control method of roll gap set-up which can improve the thickness accuracy was proposed. The off-line simulation of compensated roll gap significantly decreases top-end thickness variation.

• 제어로봇시스템학회:학술대회논문집
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• 1993.10b
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• pp.451-455
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• 1993

Interaction between system and disturbance results in system with time-dependent parameter. Parameter variation due to interaction has random characteristics. Most of the randomly varying parameters in control problem is regarded as white noise random process which is not a realistic model. In real situation those random variation is colored noise random process. Modified F-P-K equation is proposed to get the response of the random parametric system using some correction factor. Proposed technique is employed to obtain the colored noise parametric system response and confirmed via Monte-Carlo Simulation.

• 제어로봇시스템학회:학술대회논문집
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• 1992.10a
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• pp.525-530
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• 1992

This paper deals with an exit strip gauge controller design for a cold rolling mill process with one input and two outputs. In order to attenuate the exit strip gauge variation caused by the Back-up roll eccentricity and the entry guage variation, an H$_{\infty}$ controller design methodology is used to keep the frequency weighted mixed sensitivity function small. Effectiveness of the proposed controller is demonstrated by a computer simulation..

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.139-149
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• 2012

A 3D stacked IC is made by multiple dies (possibly) with heterogeneous process technologies. Therefore, die-to-die variation in 2D chips renders on-package variation (OPV) in a 3D chip. In spite of the different variation effect in 3D chips, generally, 3D die stacking can produce high yield due to the smaller individual die area and the averaging effect of variation on data path. However, 3D clock network can experience unintended huge clock skew due to the different clock propagation routes on multiple stacked dies. In this paper, we analyze the on-package variation effect on 3D clock networks and show the necessity of a post silicon management method such as body biasing technique for the OPV induced 3D clock skew control in 3D stacked IC designs. Then, we present a parametric yield improvement method to mitigate the OPV induced 3D clock skew.