• Title/Summary/Keyword: process rate

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Mechanical Effects of Pipe Drawing Angle and Reduction Rate on Material (파이프 인발 각도에 따른 기계적 효과 및 재료에 따른 감소율에 관한 연구)

  • Seo, Youngjin
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.19 no.12
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    • pp.8-13
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    • 2020
  • Seamless pipes are fabricated by drilling a hole in a cylindrical material and drawing the material to the desired diameter. These pipes are used in environments where high reliability is required. In this study, the pipe drawing process was simulated using DEFORM, a commercial finite element method (FEM) analysis program. The outer diameter of the steel cylinder used herein before drawing was 70 mm, and the target outer diameter was 58 mm. The drawing process consisted of two stages. In this study, the effect of cross-sectional reduction rate on the pipe was investigated by varying the cross-sectional reduction rate in each step to achieve the target outer diameter. The results of this study showed that the first section reduction rate of 26% and the second section reduction rate of 13.9% caused the lowest damage to the material. Moreover, the FEM simulation results confirmed the influence of the drawing die angle on the pipe drawing process. The drawing die angles of 15° in the first step and 9° in the second step caused the least damage to the material.

A Study on the Efficient Applicability of Fenton Oxidation for the Wastewater Containing Non-biodegradable Organics (생물난분해성 유기물질 함유 폐수처리를 위한 Fenton 산화법의 효율적 적용방안에 관한 연구)

  • Jun, Se Jin;Kim, Mi Jeong
    • Journal of Korean Society of Water and Wastewater
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    • v.14 no.1
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    • pp.76-83
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    • 2000
  • This research is about wastewater containing non-biodegradable TDI(Toluene Diisocyanate) that is treated by the activated carbon adsorption method. In the case of the Fenton oxidation process being applied to the existing process, optimal pH, reaction time, chemical dosing amount, removal rate, and cost were investigated. A pilot plant test was applied after finding optimal conditions with lab experiments. The optimal conditions were pH 3~5(COD removal rate 84~88%) and reaction time 30min~1hr. In higher $H_2O_2$ dosing amount, COD removal rate was a little higher. But there was little difference in the removal rate according to $FeSO_4{\cdot}7H_2O$ dosing amount. Treatment cost was economical in the case of the Fenton oxidation process being operated earlier than activated carbon adsorption system. But chemical dosing point, chemical mixing effect, chemical dosing amount, removal rate, and the cost of facility and others must be considered in practical process.

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Quality Assessment by Analysis of Yoke Caulking Process Considering Strain Rate Sensitivity (변형률속도 민감성을 고려한 요크 코킹공정의 해석에 의한 품질 평가)

  • 박문식;강경모;한덕수
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.6
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    • pp.37-46
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    • 2003
  • This paper is to predict quality deterioration resulting from a caulking process of yoke which is a part of automotive steering system. The caluking is a plastic deformation process involving such as impact of high speed tool, contacts between part and fixtures and strain rate sensitivity of the part material. Elaborate application of finite element method is neccesary to calculate changes of part dimensions because they fall into a level of tolerances. Simple work hardening and strain rate sensitive model is proposed fur the material and applied for the simulation by using Abaqus which is able to cater for elastoplastic rate sensitive material and contacts. Numerical results of test models that represent tensile bar and tensile plate are compared with material data inputs. Dimensional changes for the yoke are calculated from simulations and compared to the mesurements and they show good agreement. The method presented here with the material model proved to be valuable to assess quality deterioration for similar metal forming processes.

Development of Prediction Model using PCA for the Failure Rate at the Client's Manufacturing Process (주성분 분석을 이용한 고객 공정의 불량률 예측 모형 개발)

  • Jang, Youn-Hee;Son, Ji-Uk;Lee, Dong-Hyuk;Oh, Chang-Suk;Lee, Duek-Jung;Jang, Joongsoon
    • Journal of Applied Reliability
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    • v.16 no.2
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    • pp.98-103
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    • 2016
  • Purpose: The purpose of this paper is to get a meaningful information for improving manufacturing quality of the products before they are produced in client's manufacturing process. Methods: A variety of data mining techniques have been being used for wide range of industries from process data in manufacturing factories for quality improvement. One application of those is to get meaningful information from process data in manufacturing factories for quality improvement. In this paper, the failure rate at client's manufacturing process is predicted by using the parameters of the characteristics of the product based on PCA (Principle Component Analysis) and regression analysis. Results: Through a case study, we proposed the predicting methodology and regression model. The proposed model is verified through comparing the failure rates of actual data and the estimated value. Conclusion: This study can provide the guidance for predicting the failure rate on the manufacturing process. And the manufacturers can prevent the defects by confirming the factor which affects the failure rate.

Effects of chemical reaction on the polishing rate and surface planarity in the copper CMP

  • Kim, Do-Hyun;Bae, Sun-Hyuk;Yang, Seung-Man
    • Korea-Australia Rheology Journal
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    • v.14 no.2
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    • pp.63-70
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    • 2002
  • Chemical mechanical planarization (CMP) is the polishing process enabled by both chemical and mechanical actions. CMP is used in the fabrication process of the integrated circuits to achieve adequate planarity necessary for stringent photolithography depth of focus requirements. And recently copper is preferred in the metallization process because of its low resistivity. We have studied the effects of chemical reaction on the polishing rate and surface planarity in copper CMP by means of numerical simulation solving Navier-Stokes equation and copper diffusion equation. We have performed pore-scale simulation and integrated the results over all the pores underneath the wafer surface to calculate the macroscopic material removal rate. The mechanical abrasion effect was not included in our study and we concentrated our focus on the transport phenomena occurring in a single pore. We have observed the effects of several parameters such as concentration of chemical additives, relative velocity of the wafer, slurry film thickness or ash)tract ratio of the pore on the copper removal rate and the surface planarity. We observed that when the chemical reaction was rate-limiting step, the results of simulation matched well with the experimental data.

An analysis of the gyro random process (자이로 랜덤 프로세스의 분석)

  • 고영웅;김경주;이재철;권태무
    • 제어로봇시스템학회:학술대회논문집
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    • 1996.10b
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    • pp.210-212
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    • 1996
  • Random drift rate (i.e., random drift in angle rate) of a gyro represents the major error source of inertial navigation systems that are required to operate over long time intervals. It is uncorrectable and leads to an increase in the error with the passage of time. In this paper a technique is presented for analyzing random process from experimental data and the results are presented. The problem of estimating the a priori statistics of a random process is considered using time averages of experimental data. Time averages are calculated and used in the optimal data-processing techniques to determine the statistics of the random process. Therefore the contribution each component to the gyro drift process can be quantitatively measured by its statistics. The above techniques will be applied to actual gyro drift rate data with satisfactory results.

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Optimization of CMP Process Parameter using Semi-empirical DOE (Design of Experiment) Technique (반경험적인 실험설계 기법을 이용한 CMP 공정 변수의 최적화)

  • 이경진;김상용;서용진
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.939-945
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    • 2002
  • The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing (CMP) process in 0.18 $\mu\textrm{m}$ semiconductor device. However, it still has various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. In this paper, we studied the DOE (design of experiment) method in order to get the optimized CMP equipment variables. Various process parameters, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal CMP process parameters.

Efficient Auto Measure Sampling Method for Semiconductor Line (반도체 라인의 효율적 계측을 위한 자동 계측 샘플링 방식에 관한 연구)

  • Kim, Tae-Yeob;Sun, Dong-Seok;Lee, Jee-Hyung
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.12
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    • pp.2505-2510
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    • 2009
  • Semiconductor processes need measurement to confirm where there are problems in quality after progresses manufacturing process. This paper suggests equipment and automatic measure sampling method that control monitoring ratio according to change point occurrence availability of process that is not measure method by the existent simple ratio rate. This paper defines measure section as ailment section, metastable section and stability section by change point standard and create statistical model of each section and developed suitable measure rate model by section. As a result, we have accomplished maximum throughput and minimum sampling number that needs to maintain constant level of quality. Proposed method minimizes load of measure process by brings production quality sophistication and decrease of process badness and lowers measure rate in stable section making perception about problem occurrence quick heightening measure rate at change point occurrence.

Development of Analysis Program for Multi-Pass Wet Wire Drawing Process and Its Application (습식 다단 인발공정 해석 프로그램 개발 밀 적용)

  • 이상곤;김민안;김병민;조형호
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.9
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    • pp.126-134
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    • 2003
  • This paper investigates the multi-pass wet wire drawing process considering the slip between the wire and the capstan. The production of fine wire through multi-pass wet wire drawing process would be impossible without backtension. The backtension is affected by many process parameters, such as slip, dies reduction, coiling number of wire at the capstan, machine reduction, characteristic of lubricant etc. Up to date, die design and dies pass schedule of multi-pass wet wire drawing process have been performed by trial and error of expert in the industrial field. In this study, an analysis program which can perform the analysis and considering the effect of slip at each capstan was developed. The effects of many important parameters (drawing force, backtension force, needed power, slip rate, slip velocity rate etc.) on multi-pass wet wire drawing process can be predicted by this developed program. It is possible to obtain the important basic data which can be used in the pass schedule of multi-pass wet wire drawing process by using this developed program.

Removal Rate and Non-Uniformity Characteristics of Oxide CMP (Chemical Mechanical polishing) (산화막 CMP의 연마율 및 비균일도 특성)

  • Jeong, So-Young;Park, Sung-Woo;Park, Chang-Jun;Lee, Kyoung-Jin;Kim, Ki-Wook;Kim, Chul-Bok;Kim, Sang-Yong;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.223-227
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    • 2002
  • As the channel length of device shrinks below $0.13{\mu}m$, CMP(chemical mechanical polishing) process got into key process for global planarization in the chip manufacturing process. The removal rate and non-uniformity of the CMP characteristics occupy an important position to CMP process control. Especially, the post-CMP thickness variation depends on the device yield as well as the stability of subsequent process. In this paper, every wafer polished two times for the improvement of oxide CMP process characteristics. Then, we discussed the removal rate and non-uniformity characteristics of post-CMP process. As a result of CMP experiment, we have obtained within-wafer non-uniformity (WIWNU) below 4 [%], and wafer-to-wafer non-uniformity (WTWNU) within 3.5 [%]. It is very good result, because the reliable non-uniformity of CMP process is within 5 [%].

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