• Journal of the Korean Society of Manufacturing Process Engineers
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• v.5 no.2
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• pp.16-21
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• 2006

In this study, the analytic realization of chatter mechanism using radial basis neural network(RBNN) was introduced and compared with the conventional stability analysis. In this regard, the FFT and time series spectrum analysis was used as a criterion for the existence of chatter in end-milling force. The desired coded outputs of chatter was trained and finally converged to desired outputs. The output of the RBNN match well with the conventional desired stability lobe. Using this trained data, the stability boundary of the radial basis neural network was acquired using the contour plotting. As a result, the proposed stability lobe boundary using RBNN consists well with the conventional analytical boundary that is calculated in characteristic equation of transfer function in chatter dynamics. In this RBNN analysis, two input and three output parameters were used in this paper.

• Journal of Power System Engineering
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• v.2 no.2
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• pp.73-80
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• 1998

The identification of drilling joint dynamics which consists of drilling and structural dynamics and the on-line time series detection of malfunction process is substantial not only for the investigation of the static and dynamic characteristics but also for the analytic realization of diagnostic and control systems in drilling. Therefore, We have discussed on the comparative assessment of two recursive time series modeling algorithms that can represent the drilling operation and detect the abnormal geometric behaviors in precision roundshape machining such as turning, drilling and boring in precision diemaking. For this purpose, simulation and experimental work were performed to show the malfunctional behaviors for drilling operation. For this purpose, a new two recursive approach (Recursive Extended Instrument Variable Method : REIVM, Recursive Least Square Method : RLSM) may be adopted for the on-line system identification and monitoring of a malfunction behavior of drilling process, such as chipping, wear, chatter and hole lobe waviness.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.5 no.3
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• pp.36-42
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• 2006

The analytical realization of uncoupled system was introduced in this study using times series and its spectrum analysis. The ARMAX spectra of time series methods were compared with the conventional FFT spectrum. Also, the response of second order system uncoupled was solved using the Runge-Kutta Gill method. In this numerical analysis, the displacement, velocity and acceleration were calculated. The displacement response among them was used for the power spectrum analysis. The ARMAX algorithm in time series was proved to be appropriate for the mode estimation and spectrum analysis. Using the separate response of first and second mode, each modes were calculated separately and the response of mixed modes was also analyzed for the mode estimation using several time series methods.

• IE interfaces
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• v.13 no.3
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• pp.438-443
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• 2000

In this paper, we suggest a new backorder policy for stockout which is occurred in each regional distribution centers of distribution chain for capital-goods product. In backorder process of backorder policy, minimize expected stockout through the balancing-division module, and has occured stockout is backordering through the emergency supply from central distribution center and regional distribution center. Simulation tests show that our backorder policy is on the decrease of backorder cost and improvement of customer service. Our backorder policy has two important benefit. First, customer service level is improved by realization of minimum stockout. Second, the backorder process by allowance of the same level supply is to decrease system operating cost.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.422-425
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• 2001

The realization of the avoidance, decrease and utilization of waste can be made through reduction of resource consumption during product production and use. Beside that it is desirable to regain the resource attached to products and components. The same resources can be much used in product and mater all cycle through their reuse and regeneration In order to improve the use productivity of resource the disassembly make up the substantial prerequisite. In this paper a model describing the disassembly sequence structure is introduced under consideration of the influential facts related to disassembly process planning rules for disassembly sequence planning are derived from that.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.836-837
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• 2005

In order to enhance discharge efficiency of Plasma Display Panel (PDP), we used an electride as electron emission layer for PDP during PDP discharge process. As the electride used in this study, $12CaO7Al_2O_3$, has low work function, it is expected to yield high electron emission during glow discharge process. $12CaO7Al_2O_3$ powder was synthesized from $CaCO_3$ and $Al(OH)_3$ powder and Ca treated for realization of electride characteristics. The $12CaO7Al_2O_3$ powder was coated on the surface of dielectric layer of PDP and discharge characteristics of electride material were evaluated.

• Journal of Korean Society for Quality Management
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• v.34 no.2
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• pp.122-128
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• 2006

One feature of a computer simulation experiment, different from a physical experiment, is that the output is often deterministic. Moreover the codes are computationally very expensive to run. This paper deals with the design and analysis of computer experiments(DACE) which is a relatively new statistical research area. We model the response of computer experiments as the realization of a stochastic process. This approach is basically the same as using a spatial linear model. Applications to the optimal mechanical designing and model calibration problems are illustrated. Algorithms for selecting the best spatial linear model are also proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.17-20
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• 2000

Over the years of decades, the memory technology has progressed a long, marble way. As we have evidenced from the Intel’s 1Kb DRAM in 1970 to the Gigabit era of 2000’s, the road further ahead towards the Terabit era will be unfolded. The technology once perceived inconceivable is in realization today, and similarly roadblocks as we know of today may become trivial issues for tomorrow. For the inquiring mind, the question is how the “puzzle” of tomorrow’s memory technology is pieced-in today. The process will take place both in evolutionary and revolutionary ways. Among these, note-worthy are the changes in DRAM architecture and the cell process technology. In this paper, some technical approaches will be discussed to bring these aspects into a general overview and a perspective with possibilities for the new memory technology will be presented.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.196-198
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• 2003

Classical lithography in semiconductor employs stepper technologies. Limits of this technology are clearly seen at structures below 100nm. Nano-imprinting lithography is a new method for generating patterns in submicron range at reasonable cost. In order to manufacture nano-imprinting lithography(NIL) equipment, several NIL manufacturers have been developing key technologies for realization of nano-imprinting process, recently. In this paper, we've been describe state-of-the-art and technology trends for nano-imprinting lithography equipments.

• Journal of IKEEE
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• v.17 no.3
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• pp.365-370
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• 2013

Power MOSFET is developed in power savings, high efficiency, small size, high reliability, fast switching, and low noise. Power MOSFET can be used in high-speed switching transistors devices. Recently attention given to the motor and the application of various technologies. Power MOSFET is a voltage-driven approach switching device and designed to handle on large power, power supplies, converters, motor controllers. In this paper, the 400 V Planar type, and the trench type for realization of low on-resistance are designed. Trench Gate Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.