• Proceedings of the KIEE Conference
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• 2000.07a
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• pp.31-33
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• 2000

This paper discusses the operational characteristic analysis of distance relay depending on the power system parameters in transmission line including FACTS devices. Distance relay requires protective coordination because the FACTS devices change power system parameters to increase power transmission capacity. In this paper, the dynamic operational characteristics of distance relay are analyed for the effect of fault resistance and operation mode of FACTS devices according to the installed points of these devices.

• Journal of Dental Anesthesia and Pain Medicine
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• v.17 no.4
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• pp.241-251
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• 2017

Devices that monitor the depth of hypnosis based on the electroencephalogram (EEG) have long been commercialized, and clinicians use these to titrate the dosage of hypnotic agents. However, these have not yet been accepted as standard monitoring devices for anesthesiology. The primary reason is that the use of these monitoring devices does not completely prevent awareness during surgery, and the development of these devices has not taken into account the neurophysiological mechanisms of hypnotic agents, thus making it possible to show different levels of unconsciousness in the same brain status. An alternative is to monitor EEGs that are not signal processed with numerical values presented by these monitoring devices. Several studies have reported that power spectral analysis alone can distinguish the effects of different hypnotic agents on consciousness changes. This paper introduces the basic concept of power spectral analysis and introduces the EEG characteristics of various hypnotic agents that are used in sedation.

• Progress in Superconductivity and Cryogenics
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• v.9 no.4
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• pp.41-45
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• 2007

Superconductor is developed for applications in high-power devices such as power-transmission cables, transformers, motor and generators. In such applications, HTS tapes are subjected to various kinds of stress or strain. AC loss is also important consideration for many large-scale superconducting devices. In the fabrication of the devices, the critical current $(I_c)$ of the high temperature superconductor degrades due to many reasons including the tension applied by bending and thermal contraction. These bending or tension reduces the $I_c$ of superconducting wire and the $I_c$ degradation affects the AC loss of the wire. The $I_c$ degradation and AC loss (self field loss) of Bi-2223 HTS and Coated conductor were measured under tension and bending conditions at 77K and self-field.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.263-267
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• 2014

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.175-181
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• 2006

Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1638-1642
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• 2007

This paper investigated the destruction effect of the semiconductors by impact of high power electromagnetic wave. The experiments is employed as an open-ended waveguide to study the destruction effects on semiconductor using a 2.45 GHz 600 W Magnetron as a high power electromagnetic wave. The semiconductors are located at a distance of $31cm\sim40cm$ from the open-ended waveguide and are composed of a LED drive circuit for visual discernment. Also the chip condition of semiconductor is observed by SEM(Scanning Electron Microscope) analysis. The semiconductor are damaged by high power electromagnetic wave at about 860 V/m. The SEM analysis of the destructed devices showed onchipwire and bondwire destructions. Based on the result, semiconductor devices should have plan to protect the semiconductor devices form high power electromagnetic wave. And the database from this experiment provides the basis for future investigation.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1502-1507
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• 2015

This paper deals with shunt compensation to eliminate voltage violation and enhance transfer capability, which is motivated towards implementation in the Korean power system. The optimal shunt compensation algorithm has demonstrated its effectiveness in terms of voltage accuracy and reducing the number of actions of reactive power compensating devices. The main shunt compensation devices are capacitor and reactor. Effects of control devices are evaluated by cost computations. The control objective at present is to keep the voltage profile of a key bus within constraints with minimum switching cost. A robust control strategy is proposed to make the control feasible and optimal for a set of power-flow cases that may occurs important event from system. Case studies with metropolitan area of the Korean power system are presented to illustrate the method.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.625-626
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• 2007

This study is on the protection system of Korean power system applying superconducting power devices. We investigates firstly protection systems of Korean power system and then do a basic study on the impact of relay systems in the power system with superconducting devices. For the more reliable result, we will carry out relay operation tests in the power system applying superconducting facilities using RTDS(Real Time Digital Simulator) in the future.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.1-6
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• 2009

The holding voltage of high-voltage devices under the snapback breakdown condition has been known to be much smaller than the operating voltage. Such characteristics cause high-voltage ICs to be susceptible to the transient latch-up failure in the practical system applications, especially when these devices are used as the ESD(ElectroStatic Discharge) power clamp circuit. A new latchup-free design of the ESD power clamp circuit with stacked-bipolar devices is proposed and successfully verified in a $0.35{\mu}m$ 3.3V/60V BCD(Bipolar-CMOS-DMOS) process to achieve the desired ESD level. The total holding voltage of the stacked-bipolar devices in the snapback breakdown condition can be larger than the operating voltage. Proposed power clamp operates safely because of the high holding voltage. From the measurement on the devices fabricated using a $0.35{\mu}m$ BCD Process, it was observed that the proposed ESD power clamp can provide 800% higher ESD robustness per silicon area as compared to the conventional clamps with a high-voltage diode.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2006.05a
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• pp.827-830
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• 2006

With recent advanced in portable electric devices, wireless sensor, MEMS and bio-Mechanics device, the new typed power supply, not conventional battery but self-powered energy source is needed. Particularly, the system that harvests from their environments are interests for use in self powered devices. For very low powered devices, environmental energy may be enough to use power source. In the generality of cases, these energy harvesting systems are used in the piezoelectric materials as mechanisms to convert mechanical vibration energy into electric energy. Through the piezoelectric materials, the ambient vibration energy could be used to prolong the power supply or in the ideal case provide endless energy f9r the devices. Therefore, the piezoelectric power harvesting cantilever beam is developed. Also, the output voltage and power are predicted in this study. We also discuss the developing system of the piezoelectric energy scavenger. An experimental verification of the model is also performed to ensure its accuracy.