Role of $N_2$ flow rate on etch characteristics and variation of line edge roughness during etching of silicon nitride with extreme ultra-violet resist pattern in dual-frequency $CH_2F_2/N_2$ /Ar capacitively coupled plasmas
-
- 한국진공학회:학술대회논문집
- /
- 한국진공학회 2009년도 제38회 동계학술대회 초록집
- /
- pp.458-458
- /
- 2010