• Polymer(Korea)
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• v.36 no.4
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• pp.461-469
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• 2012

The surface modification and characterization of Ar-plasma treated polypropylene (PP) blend are investigated using x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and contact angle measurement. An increase in Ar-plasma treatment time leads to an increase in wettability, oxygen containing polar functional groups, the amount of talc, and surface roughness on the PP blend surface. A careful observation using SEM indicates that there exists a skin layer consisting of only PP component. The difference in viscosity between PP and rubber particles facilities the formation of skin layer. However, it is found that an increase in Ar-plasma treatment time helps to decrease the thickness of skin layer. Additional methodologies for the elimination of skin layer during injection molding are also discussed. The surface modification and morphological alteration induced by Ar-plasma treatment provides a hydrophilic state, followed by the improvement in wettability, on the PP blend surface.

• Journal of the Korean Society of Clothing and Textiles
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• v.29 no.3_4 s.141
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• pp.561-568
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• 2005

The irradiation of Ultra-Violet (UV) is an efficient treatment for polymer to improve hydrophilic properties. 4-Channel PET knit fabrics were treated with UVA and UVC to develop functional and environment-friendly fabric. The fabric was treated with various treatment times and distances from UV lamps having different wavelength. FT-IR and XPS investigated the chemical changes. To confirm the change of surface properties, contact angle, surface energy and SEM were examined. The study of UV as a treatment for PET knit fabric shows significant changes in chemical and surface properties, which is proved by analyses. FT-IR and XPS analyses prove the augmentation of carboxylic, Hydrophilic groups on the surfaces treated by UV. The increase of water contact angle and surface energy means more water wettable and surface energy of PET film was substantially increased by UV irradiation time. The ageing after surface treatment had little influence on the surface energy of the irradiated PET film. SEM proves the surface modification of PET such as etching, bubble and crack. The negative effects are increased in accordance with increasing treatment time.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.163.2-163.2
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• 2010

We developed a simple method to synthesis a nitrogen doped graphene, nitrogen plasma treated graphene (NPG) sheets thought nitrogen plasma etching of graphene oxide (GO). X-ray photo electron spectroscopy (XPS) study of NPG sheets treated at various plasma conditions reveal that N-doping is classified to 3 kinds of binding configurations. The nitrogen doping concentration is at least 1.5 at % and up to 3 at% with changing of ratio of nitrogen configuration in NPG. Our group demonstrate ultracapacitor with high capacity and extremely durable using a NPG sheets that are comparable to pristine graphene supercapacitor, and pseudocapacitor using polymer and metal oxide with redox reaction, capacitance that are three-times higher, and a cycle life that are extremely stable. We also realized flexible capacitor by using the paper electrode that are coated by NPG sheets. NPG paper capacitor presented almost same performance compare with NPG on a metal substrate, and durability is much more enhanced than that. To additionally explain that how different kind of atoms in graphene layers can act as the ion absorption sites, we simulated the binding energy between nitrogen in graphene layer and ions in electrolyte. Increasing the energy density and long cycle life of ultracapacitor will enable them to compete with batteries and conventional capacitors in number of applications.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.12
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• pp.1871-1876
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• 2004

We demonstrate a novel fabrication technology for the microneedle array that can be used in the medical test field, which is transdermal drug delivery and blood analyte sampling. Previous researchers have used silicon-processed micromachining, a reactive ion etching, and molding techniques for the fabrication of microneedle array. However, these fabrication techniques have somewhat limitations apply to the microneedle array fabrication according to its application. Inclined LIGA process is suggested to overcome these problems. This process provides easier, sharper and longer out-of-plane microneedle array structure than conventional silicon-processed fabrication method did. Additionally, because of the advantage of the LIGA process based on mold fabrication for mass production, the polymer, PMMA(PolyMethylMethAcrylate), based microneedle array is useful as the mold base of nickel electroplating process; on the other hand, silicon-processed microneedle array is used in itself. In this research, we fabricate different types of out-of-plane microneedle array, which have different shape of tip, base and hole structure, using the inclined LIGA process. The fabricated microneedles have proper mechanical strength, height and sharpness to puncture human hand epidermis or dermis with less pain and without needle tip break during penetrating the skin.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.69-69
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• 2003

최근 trench capacitor, isolation trench, micro-electromechanical system(MEMS), micro-opto-electromechanical system(MOEMS)등의 다양한 기술에 적용될 고종횡비(HAR) 실리콘 식각기술연구가 진행되어 지고 있다. 이는 기존의 습식식각시 발생하는 결정방향에 따른 식각률의 차이에 관한 문제와 standard reactive ion etching(RIE) 에서의 낮은 종횡비와 식각률에 기인한 문제점들을 개선하기 위해 고밀도 플라즈마를 이용한 건식식각 장비를 사용하여 고종횡비(depth/width), 높은 식각률을 가지는 이방성 트랜치 구조를 얻는 것이다. 초기에는 주로 HBr chemistry를 이용한 연구가 진행되었는데 이는 식각률이 낮고 많은양의 식각부산물이 챔버와 시편에 재증착되는 문제가 발생하였다. 또한 SF6 chemistry의 사용을 통해 식각률의 향상은 가져왔지만 화학적 식각에 기인한 local bowing과 같은 이방성 식각의 문제점들로 인해 최근까지 CHF3, C2F6, C4F8, CF4등의 첨가가스를 이용하여 측벽에 Polymer layer의 식각보호막을 형성시켜 이방성 구조를 얻는 multi_step 공정이 일반화 되었다. 이에 본 연구에서는 SF6 chemistry와 소량의 02/HBr의 첨가가스를 이용한 single_step 공정을 통해 공정의 간소화 및 식각 프로파일을 개선하여 최적의 HAR 실리콘 식각공정 조건을 확보하고자 하였다.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1613-1616
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• 2007

A microgripper using thermal actuator and SU-8 polymer was designed and fabricated to manipulate cells and microparts. A chip size of a microgripper was 3 mm ${\times}$ 5 mm. The thermally actuated microgripper consisted of two couples of hot and cold arm actuators. The high thermal expansion coefficient, 52 $ppm/^{\circ}C$, of SU-8 compared to silicon and metals, allows the actuation of the microgripper. Thickness and width of SU-8 as an end-effector were 26 ${\mu}m$ and 80 ${\mu}m$, respectively. Initial gap between left jaw and right jaw was 120 ${\mu}m$. The ANSYS program as FEM tool was introduced to analyze the thermal distribution and displacement induced by thermal actuators. $XeF_2$ gas was used for isotropic silicon dry etching process to release SU-8 end-effector. Mechanical displacements of the fabricated microgripper were measured by optical microscopy in the range of input voltage from 0 V to 2.5 V. The maximum displacement between two jaws of a microgripper Type OG 1_1 was 22.4 ${\mu}m$ at 2.5 V.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.902-909
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• 1991

A reproducible selective dry etch process of GaAs/AlGaAs Heterostructures for High Electron Mobility Transistor(HEMT) Device fabrication is developed. Using RIE mode with $CCl_{2}F_{2}$ as the basic process gas, the observed etch selectivity of GaAs layer with respect to GaAs/$Al_{0.3}Ga_{0.7}$As is about 610:1. Severe polymer deposition problem, parialy generated from the use of $CCl_{2}F_{2}$ gas only, has been significantly reduced by adding a small amount of He gas or by $O_{2}$ plasma ashing after etch process. In order to obtain an optimized etch process for HEMT device fabrication, we com pared the properties of the wet etched Schottky contact with those of the dry etched one, and set dry etch condition to approach the characteristics of Schottky diode on wet etched surface. By applying the optimized etch process, the fabricated HEMT devices have the maximum transconductance $g_{mext}$ of 224 mS/mm, and have relatively uniform distribution across the 2inch wafer in the value of 200$\pm$20mS/mm.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.31-43
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• 1993

Thermal behavior and $O_{2}$ plasma effects on residue and penetrated impurities formed by reactive ion etching (RIE) in CHF$_{3}$/C$_{2}$F$_{6}$ have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. Decomposition of polymer residue film begins between 200-300.deg. C, and above 400.deg. C carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal above 800.deg. C under nitrogen atmosphere and out-diffusion of penetrated impurities is observed. The residue layer has been removed with $O_{2}$ plasma exposure of etched silicon and its chemical bonding states have been changed into F-O, C-O etc.. And $O_{2}$ plasma exposure results in the decrease of penetrated impurities.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1399-1401
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• 2009

In this article, we reported the results of etching polymonochloro-para-xylylene (parylene-C) thin films using inductively coupled plasma and $CF_4/O_2$ gas mixture. The $CF_4$ gas fraction increased up to the approximately 16 %, the polymer etch rate increased in the range of 277 - 373 nm/min. It confirmed that the etch rate of the parylene-C mainly depended on the O radical density in the plasma. Using a contact angle measurement, the contact angle increased with increasing the $CF_4$ fraction. Moreover, the contact angle was highly related a $CF_x$ functional group on parylene films.

• Macromolecular Research
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• v.12 no.1
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• pp.134-140
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• 2004

Semi-crystalline poly(ethylene terephthalate) (PET) film surfaces were modified with argon and oxygen plasmas by radio-frequency (RF) glow discharge at 240 mTorr/40 W; the changes in topography and surface structure were investigated by atomic force microscopy (AFM) in conjunction with specular reflectance of infrared microspectroscopy (IMS). Under our operating conditions, analysis of the AFM images revealed that longer plasma treatment results in significant ablation on the film surface with increasing roughness, regardless of the kind of plasma used. The basic topographies, however, were different depending upon the kind of gas used. The specular reflectance analysis showed that the ablative mechanisms of the argon and oxygen plasma treatments are entirely different with one another. For the Ar-plasma-treated PET surface, no observable difference in the chemical structure was observed before and after plasma treatment. On the other hand, the oxygen-plasma-treated PET surface displays a significant decrease in the number of aliphatic C-H groups. We conclude that a constant removal of material from the PET surface occurs when using the Ar-plasma, whereas preferential etching of aliphatic C-H groups, with respect to, e.g. , carbonyl and ether groups, occurs upon oxygen plasma.