• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.329-329
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• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• Journal of the Korean institute of surface engineering
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• v.31 no.6
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• pp.389-392
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• 1998

We have investigated the crystal properties of the Cd0.96Zn0.04Te(CZT) films evaporated on the Si(100) substrates by Elecctron Beam Evaporator(EBE) techique. The compositions of the As-preared films were different about 4% of atomic ratio, The films stucture was observad to be polycrystalline in cubic phase. Diffraction peaks were notable at the substrate temperature of $300^{\circ}C$. The reflectance measurements yield $E_1$=3.25~3.29 eV $E_1$+${\Delta}_1$=3.76~3.83 eV and $E_2$=5.08 eV,showing that the films wear in cubic phase. For the film evaporated at the substrate temperature of $150^{\circ}C$, the peaks of photocurrent are at 720nm and 980nm.

• Journal of the Mineralogical Society of Korea
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• v.12 no.1
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• pp.1-10
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• 1999

Talc (Mg3Si4O10(OH)2), one of the sheet silicate minerals, which is the hydrothermal alteration product of serpentinite at Cheongarm mine was prepared for the high pressure compressibility studies. Energy dispersive X-ray diffraction experiment was carried out using the Synchrotron Radiation with the Mao-Bell type diamond anvil cell at room temperature. Polycrystalline talc was mixed with MgO powder for pressure sensor as well as pressure medium in the sample chamber. High pressure runs were performed at pressures up to 35.2 GPa. Talc shows no phase transition within the present high pressure region. Bulk modulus of this talc was determined by the Birch-Murnaghan equation of state to be 78 GPa assuming its first pressure derivative Ko' of 4.

• Korean Journal of Materials Research
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• v.17 no.1
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• pp.1-5
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• 2007

GaN thin fan were grown by spin coated colloidal GaOOH precursor. Polycrystalline GaNs with crystalline size of $10{\sim}100nm$ were grown on $SiO_2$ substrate. The shape of crystallite above $900^{\circ}C$ had the hexagonal plate and column type. X-ray diffraction patterns for them correspond to those of the hexagonal wurtzite GaN. With increasing droplets. i.e, thickness of deposited layers, XRD intensity increased. PL (photoluminescence) spectrum consisted with an weak near band-edge emission at 3.45 eV and a broad donor-acceptor emission band at 3.32 eV. From the low temperature PL measurement on GaN grown at $800^{\circ}C$ that the shallow donor-acceptor recombination induced emission was more intense than the near band-edge excitonic emission.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1071-1074
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• 2007

6Mask CMOS process in low temperature polycrystalline silicon thin film transistors (poly-Si TFTs) has been developed and verified by manufacturing a 6Mask CMOS AMLCD panel. The novel 6Mask CMOS process is realized by eliminating the storage mask, gate mask and via open mask of conventional structure.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.683-687
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• 2004

The BON thin films were grown on the Si substrate by the RF-PECVD method. When stored at the room temperature, the phase separation or transition of BON thin films occurred on the surface, due to the hydrophilic property of BON. The oxidation of BON thin films occurred mainly by the evaporation of B, O and N. The oxidized BON thin films consisted of an amorphous phase and a bit of the polycrystalline phase.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.34-41
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• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1287-1290
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• 2006

A high speed analog buffer using polycrystalline silicon (poly-Si) thin film transistors (TFT) is proposed for 2.2-inch quarter video graphic adapter (qVGA) TFT-LCD panel. Simulation results show that the settling time of the proposed circuit is $10{\mu}sec$ in 2.2-inch qVGA and the power consumption of proposed analog buffer is $25{\mu}W$.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1123-1126
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• 2005

For creation of low temperature polycrystallinesilicon (LTPS) the line beam excimer laser annealing (ELA) is a well known and established technique in mass production. With introduction of Sequential Lateral Solidification (SLS) some aspects such as crystalline quality, throughput and flexibility regarding the substrate size could be improved, but for OLED manufacturing still further process development is necessary. This paper discusses line beam ELA and SLS techniques that might enable process engineers to make polycrystalline-silicon (poly-Si) films with a high degree of uniformity and quality as required for system on glass (SOG) and active matrix organic light emitting displays (AMOLED). Equipment requirements are discussed and compared to previous standards. SEM images of process examples are shown in order to demonstrate the viability.