• Nuclear Engineering and Technology
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• v.54 no.5
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• pp.1541-1548
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• 2022

The thermal conductivity of uranium oxide (UO₂) containing pores and grain boundaries is investigated using continuum-level simulations based on the finite-difference method in two and three dimensions. Steady-state heat conduction is solved on microstructures generated from the phase-field model of the porous polycrystal to calculate the effective thermal conductivity of the domain. The effects of porosity, pore size, and grain size on the effective thermal conductivity of UO₂ are quantified. Using simulation results, a new empirical model is developed to predict the effective thermal conductivity of porous polycrystalline UO₂ fuel as a function of porosity and grain size.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.8
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• pp.818-823
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• 2012

In order to predict necking behaviour of aluminium sheets, a crystal plasticity model is introduced in the finite element analysis of tensile test. Due to the computational limits of time and memory, only a small part of tensile specimen is subjected to the analysis. Grains having different orientations are subjected to numerical tensile tests and each grain is discretized by many elements. In order to predict the sudden drop of load carrying capacity after necking, a well-known Cockcroft-Latham damage model is introduced. The mismatch of grain orientation causes stress concentration at several points and damage is evolved at these points. This phenomenon is similar to void nucleation. In the same way, void growth and void coalescence behaviours are well predicted in the analysis. For the comparison of prediction capability of necking, same model is subjected to finite element analysis using uniform material properties of polycrystal with and without damage. As a result, it is shown that the crystal plasticity model can be used in prediction of necking and fracture behavior of materials accurately.

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.81-89
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• 2015

A strain-gradient crystal plasticity constitutive model was developed in order to predict the Hall-Petch behavior of a Ni-base polycrystalline superalloy. The constitutive model involves statistically stored dislocation and geometrically necessary dislocation densities, which were incorporated into the Bailey-Hirsch type flow stress equation with six strength interaction coefficients. A strain-gradient term (called slip-system lattice incompatibility) developed by Acharya was used to calculate the geometrically necessary dislocation density. The description of Kocks-Argon-Ashby type thermally activated strain rate was also used to represent the shear rate of an individual slip system. The constitutive model was implemented in a user material subroutine for crystal plasticity finite element method simulations. The grain size dependence of the flow stress (viz., the Hall-Petch behavior) was predicted for a Ni-base polycrystalline superalloy NIMONIC PE16. Simulation results showed that the present constitutive model fairly reasonably predicts 0.2%-offset yield stresses in a limited range of the grain size.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.102-105
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• 2008

To investigate the evolution of deformation texture during cold rolling deformation, cold rolling process on a commercial Al-5% Mg sheet was carried out at different rolling reduction ratio. The evolution of annealing texture in cold-rolled Al-5% Mg sheet was also investigated. The evolution of recrystallization texture during annealing process strongly depends on the rolling reduction ratio before heat treatment. Visco-plastic self-consistent (VPSC) polycrystal model was used to predict r-value anisotropy of the cold-rolled and annealed Al-5% Mg sheets. The change of volume fraction for the major texture components was also analyzed.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.10a
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• pp.70-73
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• 2000

A finite element analysis model is suggested for analysis of forming process of milli structure whose size is from a few hundreds ${\mu}m$ to a few mm. In this paper, finite element formulation which assemble crystal plasticity theory considering texture development with damage mechanics is developed, since orientation development and growth of micro voids became the primary factors for deformation aspects in large deformation of milli structure. Applying to, extremely, extrusion process of single crystal and extrusion/drawing process of polycrystal milli-size bar, extrusion force, preferred orientation, and damage evolution are examined to understand the characteristics of deformation of milii-size bar.

• Journal of Ocean Engineering and Technology
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• v.10 no.2
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• pp.42-52
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• 1996

소성스핀을 취급하기 위한 이론을 살펴보면 개념적으로 현저히 다른 세가지로 압축된다. 또한 재료직조 현상이 소성스핀의 근원이라고 알려져 있지만, 그 지배인자와 발생근원에 대하여 아직 충분히 연구되어 있지 않다. 따라서 앞으로의 연구에 올바른 방향을 제시하기 위하여 소성스핀의 기본적인 거동에 대한 연구가 요구된다. 본 연구에서는 체심입방격자 다결정의 소성스핀 시뮬레이션을 통하여, 소성스핀의 거동을 조사하였는데, 재료직조, 변형경화, 변형속도, 하중역전 등의 영향을 검토하였다. 소성발생원인으로 재료직조현상이 강조되었고, 이에 관련한 주요지배인자를 제시하였다. 무차원 소성스핀은 변형속도, 재료경화에 영향을 받으나 재료직조와 관련한 인자와 비교하여 그 영향이 작게 나타났다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.349-352
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• 2006

The plastic deformation of polycrystalline materials is induced by changes of the microstructure when the loading is beyond the critical state of stress. Constitutive models for the crystal plasticity have the common objective which relates microscopic single crystals in the crystallographic texture to the macroscopic continuum point. In this paper, a new consistent tangent stiffness for the anisotropic elasto-viscoplastic analysis of polycrystalline deformation is developed, which can be used in the finite element analysis for the slip-dominated large deformation of polycrystalline materials. In order to calculate the consistent tangent stiffness, the state function is defined based on the consistency condition between the elastic and plastic stress. The rate of shearing increment($\Delta{\gamma}^{\alpha}$) is calculated with satisfying the consistency condition. The consistency condition becomes zero when the trial resolved shear stress($\tau^{{\alpha}^*}$) becomes resolved shear stress($\tau^{\alpha}$) at every step. Iterative method is utilized to calculate the rate of shearing increment based on the implicit backward Euler method. The consistent tangent stiffness can be formulated by differentiating the rate of shearing increment with total strain increment after the instant rate of shearing increment converges. The proposed tangent stiffness is applied to the ABAQUS/Standard by implementing in the ABAQUS/UMAT.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.485-488
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• 2005

Most metals are polycrystalline material whose deformation is dominated by the slip system. During the deformation process, orientation of slip systems is rearranged with preferred orientations, leading to deformation-induced crystallographic texture which is called deformation texture. Depending on the texture development, the property of material can be changed. The rate-independent crystal plasticity which is based on the Schmid law as a yield function causes a non-uniqueness in the choice of active slip systems. In this work, to avoid the slip system ambiguity problem, rate-independent crystal plasticity model based on the smooth yield surface with rounded-off corners is adopted. In order to simulate the polycrystalline material under plastic deformation, we employ the Taylor model of polycrystal behavior that all the grains are assumed to be subjected to the macroscopic velocity gradient. Rigid-plastic finite element program based on this rate-independent crystal plasticity is developed to predict the grain-level deformation behavior of FCC metals during metal forming processes. In the finite element calculation, one integration point is considered as a crystalline aggregate which has a number of crystals. Macroscopic behavior of material can be deduced from the behavior of aggregates. As applications, the extrusion processes are simulated and the changes of mechanical properties are predicted.

• The Journal of the Korea Contents Association
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• v.18 no.10
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• pp.361-367
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• 2018

The purpose of this study was to evaluate the influence of hydrofluoric acid etching treatment on the bonding strength of yttria-stabilized tetragonal zirconia polycrystal(Y-TZP). Four groups of zirconia-resin cement specimens were prepared; 1) ZGS group (zirconia, no treatment), 2) ZGSH group (zirconia, hydrofluoric acid etching treatment) 3) H-ZGS group (Hybrid zirconia, no treatment) 4) H-ZGSH group (Hybrid zirconia, hydrofluoric acid etching treatment). The shear bond strength between zirconia and porcelain was measured using a Instron Universal Testing Machine(Model DBBP-500, Instron Corporation, Kyonggi, Korea). Data were statistically analyzed using independent t-test and two-way ANOVA(${\alpha}=0.05$). The ceramic-resin cement bonding strength was affected by hydrofluoric acid etching treatment(p<0.05). Digital microscope examination of the fracture surface showed mixed failures with adhesive and cohesive types in hydrofluoric acid etching treatment with treated zirconia and hybrid zirconia groups.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.419-427
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• 2007

Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.