• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• 한국주조공학회지
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• 제25권3호
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• pp.115-122
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• 2005

In the present study, an EMC (Electromagnetic Casting) process, using a segmented Cu cold crucible under a high frequency alternating magnetic field of 20 kHz, was practiced for the fabrication of poly-crystalline Si ingot of 50 mm diameter. The effects of Joule heating and electromagnetic pressure in molten Si were systematically investigated with various processing parameters such as electric current and crucible configuration. A preliminary experimental work was initiated with the pure Al system for the establishment of a stabilized non-contact working condition, and further adapted to the semiconductor-off-grade Si system. A commercialized software such as Opera-3D was utilized in order to simulate electromagnetic pressure and Joule heating. In order to evaluate the meniscus shape of the molten melts, shape parameter was used throughout the research. A segmented graphite crucible, which was attached at the upper part of the cold crucible, was introduced to enhance significantly the heating efficiency of Si melt keeping non-contact condition during continuous melting and casting processes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.377-377
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• 2007

A simplified integration process including packaging is presented, which enables the realization of the portable fluorescence detection system. A fluorescence detection microchip system consisting of an integrated PIN photodiode, an organic light emitting diode (OLED) as the light source, an interference filter, and a microchannel was developed. The on-chip fluorescence detector fabricated by poly(dimethylsiloxane) (PDMS)-based packaging had thin-film structure. A silicon-based integrated PIN photo diode combined with an optical filter removed the background noise, which was produced by an excitation source, on the same substrate. The active area of the finger-type PIN photo diode was extended to obtain a higher detection sensitivity of fluorescence. The sensitivity and the limit of detection (LOD S/N = 3) of the system were $0.198\;nA/{\mu}M$ and $10\;{\mu}M$, respectively.

• 대한금속재료학회지
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• 제46권11호
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• pp.755-761
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• 2008

We fabricated thermally evaporated 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature range of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated 100 nm-thick ITO/(poly)Si films with an rf-sputter as references. A transmission electron microscope (TEM) and an X-ray diffractometer were used to determine cross-sectional microstructure and phase changes. A UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed 20~65 nm-thick silicide layers formed on the single and polycrystalline silicon substrates. Ir-inserted nickel silicide on single crystalline substrate showed almost the same absorbance in near IR region as well as ITO, but Ir-inserted nickel silicide on polycrystalline substrate, which had the uniform absorbance in specific region, showed better absorbance in near IR region than ITO. The Ir-inserted nickel silicide on polycrystalline substrate particularly showed better absorbance in middle IR region than ITO. The results imply that nano-thick Ir-inserted nickel silicides may have excellent absorbing capacity in near-IR and middle-IR region.

• 센서학회지
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• 제30권1호
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• pp.56-60
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• 2021

In this study, the relationship between the transmitted light intensity and full-width-at-half-maximum (FWHM) of a Fabry-Perot filter was investigated. The measured refractive indices and absorption coefficients of the fabricated thin films were applied to the Fabry-Perot filter via simulations using optical software. Although considerable research has been conducted on Fabry-Perot filters, this study focused on the usefulness of 4.26-㎛ infrared filtering in carbon dioxide detection. Optical analysis was performed considering the effects of the thickness, refractive indices, and number of thin films in a distributed Bragg reflector. Ultimately, a clear trade-off relationship was observed wherein the transmitted light intensity decreased as the number of multilayers increased; however, the FWHM was observed to be narrower.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.493-493
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• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• 청정기술
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• 제20권4호
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• pp.449-456
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• 2014

기후변화로 인한 국지적인 이상가뭄 빈발 및 물수지 관련 불확실성 증가 등으로 각국에서는 사용가능한 담수량 확보, 즉 물안보 문제가 크게 대두되고 있다. 사용가능한 담수량 중 상당부분이 전력을 생산하는 발전 분야에도 사용되기 때문에 그 중요성이 점차 증대하고 있다. 신재생에너지원인 태양광발전은 설비제조, 설치 및 운전의 전 과정(life cycle)에서 수자원을 소비하지만 전통적인 에너지원인 화력발전이나 원자력발전에 비하면 상대적으로 수자원을 적게 사용한다는 장점이 있다. 본 연구에서는 태양광시스템의 원료채취부터 운영발전까지 물 사용량을 알아보기 위해 전 과정의 물 발자국을 측정하여 그 결과를 분석했다. 물 발자국 산정결과 태양광시스템의 전체 물 발자국은 $0.989m^3/MWh$이며, 폴리실리콘과 태양전지 공정에서 물 발자국이 높게 나타났다. 폴리실리콘 공정은 에너지 다소비 공정이기 때문에 냉각수 사용량이 많았고 태양전지 공정에서는 고효율 결정질 실리콘 세척을 위한 탈 이온수(deionized water) 사용량이 많았기 때문에 물 발자국이 높은 것으로 보인다. 태양광발전은 기존 에너지원보다 물 사용량이 적은 발전원임을 확인할 수 있었으며, 에너지 분야의 물 사용량을 절감할 수 있는 가치를 가지고 있음을 알 수 있다. 향후 에너지정책 결정에 있어서 신재생에너지의 부가적인 가치로서 물 발자국 개념의 도입이 중요하다.

• 한국산학기술학회논문지
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• 제7권6호
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• pp.1056-1063
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• 2006

10 nm-Ni/l nm-Ir(poly)Si과 10 nm-$Ni_{50}Co_{50}$/(poly)Si 구조의 박막을 열증착기로 준비하고 쾌속열처리기로 40초간 $300{\sim}1200^{\circ}C$ 온도 범위에서 실리사이드화 시켰다. 이들의 실리사이드 온도에 따른 면저항, 미세구조와 두께, 생성상, 화학조성과 표면조도의 변화를 사점면저항 측정기와 이온빔현미경, X선 회절기, 오제이 분석기, 주사탐침현미경을 써서 확인하였다. Ir과 Co의 혼입에 따라 기존의 $700^{\circ}C$에 한정된 NiSi에 비해 단결정, 다결정 실리콘 기판에서의 저저항 안정 구간이 각각 $1000^{\circ}C$, $850^{\circ}C$로 향상되었다. 이때의 실리사이드층의 두께도 20$\sim$50 nm로 나노급 공정에 적합하였다. Ir과 Co의 첨가는 단결정 기판에서의 니켈실리사이드의 고저항 $NiSi_2$로의 변태를 방지하였고, 다결정 기판에서 고온에서의 고저항은 고저항 상의 출현과 실리콘층과의 혼합과 도치현상이 발생한 것이 이유였다. Ir의 첨가는 특히 최종 실리사이드 표면온도를 3 nm 이내로 유지시키는 장점이 있었다 Ir과 Co를 첨가한 니켈실리사이드는 기존의 니켈실리사이드의 열적 안정성을 향상시켰고 나노급 디바이스에 적합한 물성을 가짐을 확인하였다.

• Current Photovoltaic Research
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• 제9권3호
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.

• Korean Chemical Engineering Research
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• 제60권3호
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• pp.327-333
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• 2022

본 연구에서는 고용량 음극 소재로 활용되는 실리콘의 부피팽창을 개선하기 위해 Si/CNT/C 음극 복합소재를 제조하였다. Si/CNT는 표면 개질에 의한 양전하 실리콘과 음전하 CNT의 정전기적 인력에 의해서 제조되었고, 수열합성에 의해서 구형의 Si/CNT/C 복합소재를 합성하였다. 전극 제조는 poly(vinylidene fluoride) (PVDF), polyacrylic acid (PAA) 및 styrene butadiene rubber (SBR) 바인더를 사용하였고, 1.0 M LiPF₆ (EC:DMC:EMC = 1:1:1 vol%) 전해액 및 fluoroethylene carbonate (FEC)가 첨가된 전해액을 사용하여 전지를 제조하였다. Si/CNT/C 음극 복합소재는 SEM, EDS, XRD 및 TGA를 사용하여 물리적 특성을 분석하였으며, 사이클, 율속, dQ/dV 및 임피던스 테스트를 통해 리튬이온 배터리의 성능을 조사하였다. 활물질로 Si/CNT/C 복합소재, 바인더로 PAA/SBR, 전해액으로 FEC 10 wt%가 첨가된 EC:DMC:EMC 용매를 사용했을 경우, 50 사이클 후 914 mAh/g의 높은 가역 용량과 83%의 용량 유지율 및 2 C/0.1 C에서 70%의 속도 특성을 보여주었다.