• Title/Summary/Keyword: poly paper

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The Characteristics of High Temperature Crystallized Poly-Si for Thin Film Transistor Application (박막트랜지스터 응용을 위한 고온 결정화된 다결정실리콘의 특성평가)

  • 김도영;심명석;서창기;이준신
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.5
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    • pp.237-241
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    • 2004
  • Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

Effect of poly-Si Thickness and Firing Temperature on Metal Induced Recombination and Contact Resistivity of TOPCon Solar Cells (Poly-Si 두께와 인쇄전극 소성 온도가 TOPCon 태양전지의 금속 재결합과 접촉비저항에 미치는 영향)

  • Lee, Sang Hee;Yang, Hee Jun;Lee, Uk Chul;Lee, Joon Sung;Song, Hee-eun;Kang, Min Gu;Yoon, Jae Ho;Park, Sungeun
    • Current Photovoltaic Research
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    • v.9 no.4
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    • pp.128-132
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    • 2021
  • Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiNx deposition conditions can affect the metal contact of the TOPCon structure.

Organic light emitting filaments (유기발광섬유)

  • Park, Jukwang;Lee, Junghoon;Chang Seoul
    • Proceedings of the Korean Fiber Society Conference
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    • 2003.04a
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    • pp.358-359
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    • 2003
  • Organic light-emitting device have attracted much interest due to their potential application in large area, full color, flat panel displays. Poly(p-phenylene)(PPP), as a blue light-emitting materials, have studied in our previous report. Thus, we selected poly(p-phenylene) (PPP) to fabricate the organic light-emitting filaments(OLEF) [1-2]. In this paper, we fabricated an organic light-emitting filaments(OLEF), which can be woven into fabric. The key concept was flexibility in one-dimensional structures. (omitted)

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Circuit Integration Technology of Low-Temperature Poly-Si TFT LCDs

  • Motai, Tomonobu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.75-80
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    • 2004
  • By the SOG (System-on-Glass) technology with excimer laser anneal process, the number of IC chips and the area of the mounted IC chips on the printed circuit board are reduced. In new circuit integrations on the glass substrate, we have developed D/A converter including the new capacitor array, amplifier comprising the original comparators and new display device with capturing images by integrated sensor into a pixel. This paper discusses the application of circuit integration of low-temperature poly-Si.

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Effect of Degree of Saponification on the Durability of Paper Coated by Atactic Poly(vinyl alcohol) (혼성배열 폴리비닐알코올로 코팅된 용지의 내구성에 대한 비누화도의 영향)

  • 최원규;류원석
    • Proceedings of the Korean Fiber Society Conference
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    • 2002.04a
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    • pp.414-416
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    • 2002
  • 폴리비닐알코올 (poly(vinyl alcohol), PVA)는 분해되어 대부분의 성분이 물과 이산화탄소로 전환되는 가장 이상적인 환경친화성 고분자이다. PVA만의 특유한 반응인 비누화 과정에 의해 가지가 모두 제거되기 때문에 화학적인 방법에 의해 완벽한 선형고분자를 얻는 것이 가능하다. PVA는 측쇄에 존재하는 히드록시기의 강력한 수소결합 때문에 우수한 반응성 및 결합성을 보유한 유기 고분자로서, 수용성 뿐 아니라 다양한 소재와 상용성이 있는 것으로 알려져 있다(1-4). (중략)

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A Modeling and Analysis of Poly-phase dc/dc Converter (다상화 dc/dc converter의 모델링 및 해석)

  • Kim, Yang-Mo
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.512-515
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    • 1991
  • The advantages of poly-phase converter are to be able to reduce the ripple current and to lessen the weight of power inductors. This paper is derived the equivalent circuit, dc of and ac modeling circuit of a 3-phase multiple buck converter by using state space representation and averaging techniche. Futhermore, it is represented the equivalent circuits according to the duty cycle.

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Device Design Considerations and Uniformity Improvement for Low-Temperature Poly-Si TFTs Fabricated by Sequential Lateral Solidification Technology

  • Chu, Fang-Tsun;Shih, Ding-Kang;Chen, Hung-Tse;Yeh, Yung-Hui
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.509-512
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    • 2006
  • In this paper, we proposed the novel device and process design to enhance the uniformity of low-temperature poly-Si TFTs fabricated by sequential lateral solidification (SLS). The proposed design schemes can avert the conventional two-shot SLS process-induced issues. Moreover, different design considerations between conventional excimer laser crystallization and the SLS process were also proposed and discussed.

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Impact of Plasma Induced Degradation on Low Temperature Poly-Si CMOS TFTs during Etching Process

  • Chang, Jiun-Jye;Chen, Chih-Chiang;Chuang, Ching-Sang;Yeh, Yung-Hui
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.519-522
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    • 2002
  • In this paper, we analyze the impact of plasma etching process induced device degradation on low temperature poly-Si TFTs. The results indicate the relationship between device degradation and PPID effect during plasma fabrication. The dual-gate structure, which is used to suppress leakage current, is also discussed in this research.

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Biaxial Tensile Behaviors of Elastomeric Polymer Networks

  • Shinzo, Kohjiya
    • Elastomers and Composites
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    • v.38 no.2
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    • pp.175-179
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    • 2003
  • For the total description of mechanical behaviors of elastomers, it is necessary to know the so-called rheological constitutive equation i.e. the strain-energy density function (W) in case of elastomers, which necessitates biaxial tensile results of elastic body. This paper first describes the experimental results of biaxial tensile measurements on poly(siloxane) model networks. W was estimated from its differential form i.e. the $1^{st}$ differential of W is stress. The W was found to reproduce the experimental stress-strain results, and the W estimated for silica filled poly(siloxane) networks suggest a different behavior between conventional precipitated silica and in situ formed silica. The difference suggests the different surface property of the two silicas.