• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.60-65
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• 2014

This article explains the experimental results of ferroelectric polarization switching (FPS) of potassium nitrate ($KNO_3$) with different polymers such as polyvinylidene fluoride (PVDF) and polyvinyl fluoride (PVF) using simple melt-press techniques. To analyze the ferroelectric polarization switching in potassium nitrate ($KNO_3$) composite films at room temperature, we applied the Ishibashi and Takagi theory (based on Avrami model) to the switching current transient. To investigate the dimensionality of domain growth, the ferroelectric polarization switching current (FPS current) was observed from the square - wave bipolar signals across a resistance of $0.1k{\Omega}$ in series with the composite films. The existence of a switching current transient pulse confirmed the ferroelectricity and indicated the stability of the ferroelectric phase (phase III) of $KNO_3$ at room temperature. Polarization hysteresis (P-E) characteristics supported the prominent features of ferroelectric polarization switching in the composite films at room temperature.

• E2M - 전기 전자와 첨단 소재
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• 제11권10호
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• pp.46-52
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• 1998

In this study, polarization switching characteristics of Pb(ZrxTil-x)O3 (PZT) thin films were investigated. Switching times(ts) were found to be decreased as the Zr mol% was increased. But, the switching peak currents(Imax) showed the largest value at 50 mol% Zr. As a result of this experiment, ts was found to be depended on the remanent polarization and coercive field and also Imax strongly depended on the dielectric constant of PZT thin films. In order to investigate the partial switching kinetics of PZT thin films, short and relatively small voltage pulses were applied to the MFM(metalferroelectric metal) PZT capacitors and polarization switching curves were measured with a variation of the total width of the applied pulses. Also, the switching curves were measured at different applied voltages(4, 8, 10, 12 and 14 volts). As the applied voltages increased, ts and Imax were found to be decreased and increased, respectively. In case of fatigued specimen which we applied $\pm$10 volts square pulse for 1010 cycles, ts and Imax were found to be shorter and smaller than those of virgin specimens. This is due to the decrease of the remanent polarization and the increase of the coercive field.

• 전기학회논문지
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• 제56권12호
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• pp.2214-2216
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• 2007

Based on a semiconductor optical amplifier and sampled fiber Bragg gratings, polarization-controlled waveband switching in multiwavelength fiber laser is successfully demonstrated at room temperature by using high polarization selectivity of a polarization beam splitter. A multiwavelength-switching operation between eight and six laser lines with signal to noise ratio over 35 dB and wavelength spacing of ${\sim}0.8nm$ has been successfully demonstrated. The switching displacement of the proposed laser was ${\sim}7.1nm$. The intensity unevenness between different laser lines was measured to be less than 6.5 dB. The switching displacement between wavebands (groups of contiguous wavelengths), wavelength channels, and their spacings can be flexibly designed by the selected comb filters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• 한국표면공학회지
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• 제53권6호
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• pp.330-342
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• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.

• 한국전자파학회논문지
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• 제15권5호
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• pp.461-466
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• 2004

본 논문에서는 스위칭 소자를 사용한 새로운 형태의 편파 다이버시티 개구 결합 원편파 패치 안테나를 제안하였다. 제안된 안테나의 구조는 정사각형 패치의 모서리를 왜곡시킨 단일 패치이며, 급전은 전력 분배기 형태의 마이크로스트립 급전에 Schottky 다이오드를 삽입시킨 형태이다. 스위칭 소자인 Schottky 다이오드는 급전의 전력 분배 지점에서 $\lambda$/4 떨어진 위치에 삽입하였으며, Schottky diode의 ON/OFF 동작으로 방사체인 패치의 급전이 변화를 이루어 좌$.$우 선회 원편파로 변화되는 구조로 설계하였다. 스위칭 동작에 의해 측정되어진 안테나의 3 dB 축비 대역폭은 약 2 %로 측정되어졌다.

• 대한기계학회논문집A
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• 제25권11호
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• pp.1697-1704
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• 2001

A finite element model for polarization switching in electro-mechanically coupled materials is proposed and applied to predict the switching behavior of a two-dimensional ferroelectric ceramic. A complicated micro-structure existing in the material is modeled as il continuum body and a simple 3 node triangle finite element with nodal displacement and voltage degrees of freedom is used for a finite element analysis. The elements use nonlinear constitutive equations, switching criterion and kinetic relation, fur representation of material response at strong electric and stress fields. The polarization state of the material is represented by internal variables in each element, which are updated at each simulation step based on the proposed constitutive equations. The model reproduces strain and electric displacement hysteresis loops observed in the material.

• 대한기계학회논문집A
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• 제27권6호
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• pp.849-856
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• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• 한국재료학회지
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• 제30권2호
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• pp.99-104
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• 2020

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO₂) have led to the expectation that HfO₂ could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO₂ thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO₂-based MFM capacitors by applying various ferroelectric switching characteristics models.

• Journal of Electrical Engineering and Technology
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• 제4권3호
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• pp.405-409
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• 2009

A polarization-independent multiwavelength-switchable fiber filter is proposed based on a polarization beam splitter and fiber coupler, which can function as a polarization-independent transmission or reflection-type interleaving filter. The proposed filter consists of a polarization beam splitter and a Sagnac birefringence loop composed of a 50:50 coupler, high birefringent fibers, and two quarter-wave plates. In the proposed filter, a transmission-type interleaver with a channel isolation > 18 dB or a reflection-type one with a channel isolation of ${\sim}3$ dB, whose channel spacing and switching displacement were 0.8 and 0.4 nm in common, respectively, could be obtained. A channel interleaving operation could be performed by the proper control of waveplates within the Sagnac birefringence loop.