• Title/Summary/Keyword: polar substrate

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Fast liquid crystal switching performance on indium zinc oxide films with low curing temperature via ion-beam irradiation (이온빔 조사된 저온 소성 인듐 아연 산화막을 이용한 액정의 고속 스위칭 특성 연구)

  • Oh, Byeong-Yun
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.904-909
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    • 2019
  • Using the ion-beam irradiated indium zinc oxide (IZO) films which was cured at $100^{\circ}C$, uniform LC and homogeneous alignment of liquid crystal (LC) molecules was achieved. The IZO film was deposited on the glass substrate at the curing temperature of $100^{\circ}C$ and irradiated by the ion-beam which is an LC alignment method. To verify the LC alignment characteristics, polarizing optical microscope and the crystal rotation method were used. Additionally, it was confirmed that the LC cell with the IZO films had an enough thermal budget for high-quality LC applications. Field emission scanning electron microscope was conducted as a surface analysis to evaluate the effect of the ion-beam irradiation on the IZO films. Through this, it was revealed that the ion-beam irradiation induced rough surface with anisotropic characteristics. Finally, electro-optical (EO) performances of the twisted-nematic cells with the IZO films were collected and it was confirmed that this cell had better EO performances than the conventional rubbed polyimide. Furthermore, the polar anchoring energy was measured and a suitable value for stable LC device operation was achieved.

High-Sensitivity Microstrip Patch Sensor Antenna for Detecting Concentration of Ethanol-Water Solution in Microliter Volume (마이크로리터 부피의 에탄올 수용액 농도 검출을 위한 고감도 마이크로스트립 패치 센서 안테나)

  • Junho Yeo;Jong-Ig Lee
    • Journal of Advanced Navigation Technology
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    • v.26 no.6
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    • pp.510-515
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    • 2022
  • In this paper, a microstrip patch sensor antenna (MPSA) for detecting the concentration of an ethanol-water solution in a microliter volume is proposed. A rectangular slot was added at the radiating edge of the patch to increase the sensitivity to the relative permittivity change. To improve a low input resistance caused by placing an ethanol-water solution, which is a polar liquid with high dielectric constant and high loss tangent, on the patch, a quarter-wave impedance transformer was added between the 50-ohm feedline and the patch, and the MPSA was fabricated on a 0.76 mm-thick RF-35 substrate. A cylindrical container was made of acryl, and 15 microliters of the ethanol-water solution was tested from 0% to 100% of ethanol concentration at 20% intervals. Experiment results show that the resonant frequency increased from 1.947 GHz to 2.509 GHz when the ethanol concentration of the ethanol-water solution was increased from 0% to 100%, demonstrating the performance as a concentration detecting sensor.

Interface structure and anisotropic strain relaxation of nonpolar a-GaN on r-sapphire

  • Gong, Bo-Hyeon;Jo, Hyeong-Gyun;Song, Geun-Man;Yun, Dae-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.31-31
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    • 2010
  • The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

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Bioleaching of Mn(II) from Manganese Nodules by Bacillus sp. MR2 (Bacillus sp. MR2에 의한 망간단괴의 생물용출)

  • Choi, Sung-Chan;Lee, Ga-Hwa;Lee, Hong-Keum
    • Korean Journal of Microbiology
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    • v.45 no.4
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    • pp.411-415
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    • 2009
  • Some microorganisms are capable of leaching Mn(II) from nonsulfidic manganese ores indirectly via nonenzymatic processes. Such reductive dissolution requires organic substrates, such as glucose, sucrose, or galactose, as a source of carbon and energy for microbial growth. This study investigated characteristics of Mn(II) leaching from manganese nodules by using heterotrophic Bacillus sp. strain MR2 provided with corn starch as a less-expensive substrate. Leaching of Mn(II) at 25.6 g Mn(II) $kg^{-1}$ nodule $day^{-1}$ was accompanied with cell growth, but part of the produced Mn(II) re-adsorbed onto residual $MnO_2$ particles after 24 h. Direct contact of cells to manganese nodule was not necessary as a separation between them with a dialysis tube produced similar amount [24.6 g Mn(II) $kg^{-1}$ nodule $day^{-1}$]. These results indicated an involvement of extracellular diffusible compound(s) during Mn(II) leaching by strain MR2. In order to optimize a leaching process we tested factors that influence the reaction, and the most efficient conditions were $25\sim35^{\circ}C$, pH 5~7, inoculum density of 1.5~2.5% (v/v), pulp density of 2~3 g/L, and particle size <75 ${\mu}m$. Although Mn(II) leaching was enhanced as particle size decrease, we suggest <212 ${\mu}m$ as a proper size range since more grinding means more energy consumption The results would help for the improvement of bioleaching of manganese nodule as a less expensive, energy-efficient, and environment-friendly technology as compared to the existing physicochemical metal recovery technologies.

Cloning and Expression of the Cathepsin F-like Cysteine Protease Gene in Escherichia coli and Its Characterization

  • Joo, Han-Seung;Koo, Kwang-Bon;Park, Kyun-In;Bae, Song-Hwan;Yun, Jong-Won;Chang, Chung-Soon;Choi, Jang-Won
    • Journal of Microbiology
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    • v.45 no.2
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    • pp.158-167
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    • 2007
  • In this study, we have cloned a novel cDNA encoding for a papain-family cysteine protease from the Uni-ZAP XR cDNA library of the polychaete, Periserrula leucophryna. This gene was expressed in Escherichia coli using the T7 promoter system, and the protease was characterized after partial purification. First, the partial DNA fragment (498 bp) was amplified from the total RNA via RT-PCR using degenerated primers derived from the conserved region of cysteine protease. The full-length cDNA of cysteine protease (PLCP) was prepared via the screening of the Uni-ZAP XR cDNA library using the $^{32}P-labeled$ partial DNA fragment. As a result, the PLCP gene was determined to consist of a 2591 bp nucleotide sequence (CDS: 173-1024 bp) which encodes for a 283-amino acid polypeptide, which is itself composed of an 59-residue signal sequence, a 6-residue propeptide, a 218-residue mature protein, and a long 3'-noncoding region encompassing 1564 bp. The predicted molecular weights of the preproprotein and the mature protein were calculated as 31.8 kDa and 25 kDa, respectively. The results of sequence analysis and alignment revealed a significant degree of sequence similarity with other eukaryotic cysteine proteases, including the conserved catalytic triad of the $Cys^{90},\;His^{226},\;and\;Asn^{250}$ residues which characterize the C1 family of papain-like cysteine protease. The nucleotide and amino acid sequences of the novel gene were deposited into the GenBank database under the accession numbers, AY390282 and AAR27011, respectively. The results of Northern blot analysis revealed the 2.5 kb size of the transcript and ubiquitous expression throughout the entirety of the body, head, gut, and skin, which suggested that the PLCP may be grouped within the cathepsin F-like proteases. The region encoding for the mature form of the protease was then subcloned into the pT7-7 expression vector following PCR amplification using the designed primers, including the initiation and termination codons. The recombinant cysteine proteases were generated in a range of 6.3 % to 12.5 % of the total cell proteins in the E. coli BL21(DE3) strain for 8 transformants. The results of SDS-PAGE and Western blot analysis indicated that a cysteine protease of approximately 25 kDa (mature form) was generated. The optimal pH and temperature of the enzyme were determined to be approximately 9.5 and $35^{\circ}C$, respectively, thereby indicating that the cysteine protease is a member of the alkaline protease group. The evaluation of substrate specificity indicated that the purified protease was more active towards Arg-X or Lys-X and did not efficiently cleave the substrates with non-polar amino acids at the P1 site. The PLCP evidenced fibrinolytic activity on the plasminogen-free fibrin plate test.

Optimization of Peptides Production Derived from By-product Viscera of Yoensan Ogae Meat Process (연산 오계 부산물 내장육으로부터 펩타이드 생산 최적 공정 개발과 생산물의 특성 분석)

  • Ji, Joong Gu;Yoo, Sun Kyun
    • Journal of the Korean Applied Science and Technology
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    • v.33 no.3
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    • pp.549-559
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    • 2016
  • Korean Black body fowl (Gallus gallus domesticus; Ogae) designated as a natural monument (registration number 265) has been known as a superb traditional Korean medicine. In this study, The production of peptide from the Viscera Waste of Yeonsan Ogae was optimized using commercial protease (bromelain) by response surface methodology under high pressure process. The range of processes was pressure (30 to 100 MPa), reaction time (1 to 5 h), and substrate concentration (10 to 30%, w/v). After reaction, the degree of hydrolysis, distribution of amino acids, and molecular weight of peptides were investigated. As a results, the optimization conditions were pressure 90 MPa, reaction time 3 to 4 h, and the amount of viscera meat 20% (w/v), respectively. The molecular weight of protein hydrolysates was distributed 400 to 1,000 Da. Accordingly we presumed that most products were peptides. Of those peptides, nonpolar or hydrophobic, polar but uncharged, positively charged, and negatively charged amino acids were 42.03, 26.0, 13.3, and 18.6%, respectively. Because higher amount of hydrophobic amino acids, we expected that those products would be able to utilize as the functional food ingredients.

Bacterial Spot Disease of Green Pumpkin by Pseudomonas syringae pv. syringae (Pseudomonas syringae pv. syringae에 의한 애호박 세균점무늬병)

  • Park, Kyoung-Soo;Kim, Young-Tak;Kim, Hye-Seong;Lee, Ji-Hye;Lee, Hyok-In;Cha, Jae-Soon
    • Research in Plant Disease
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    • v.22 no.3
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    • pp.158-167
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    • 2016
  • A pathogen that causes a new disease on green pumpkin in the nursery and the field was characterized and identified. Symptoms of the disease on green pumpkin were water soaking lesions and spots with strong yellow halo on leaf, brown lesion on flower, and yellow spot on fruit. The bacterial isolates from the leaf spot were pathogenic on the 8 curcubitaceae crop plants, green pumpkin, figleaf gourd, wax gourd, young pumpkin, zucchini, cucumber, melon, and oriental melon, whereas they did not cause the disease on sweet pumpkin and watermelon. They were Gram-negative, rod shape with polar flagella, fluorescent on King's B agar and LOPAT group 1a by LOPAT test. Their Biolog substrate utilization patterns were similar to Pseudomonas syringae pv. syringae's in Biolog database. Phylogenetic trees with 16S rRNA gene sequences and multilocus sequence typing (MLST) with nucleotide sequences of 4 housekeeping genes, gapA, gltA, gyrB, rpoD and those of P. syringae complex strains in the Plant Associated and Environmental Microbes Database (PAMDB) showed that the green pumpkin isolates formed in the same clade with P. syringae pv. syringae strains. The clade in MLST tree was in the genomospecies 1 group. The phenotypic and genotypic characteristics suggested that the isolates from green pumpkin lesion were P. syringae pv. syringae.

Growth of Thin Film Using Chemical Bath Deposition Method and Their Photoconductive Characteristics (CBD 방법에 의한 CdS 박막의 성장과 광전도 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeoung, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.3-10
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    • 1993
  • Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Characterization of CdSe Thin Film Using Chemical Bath Deposition Method (Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeong, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.81-86
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    • 1993
  • Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Growth and Photocurrent Properties of $CuGaSe_2$ Single Crystal ($CuGaSe_2$ 단결정 박막 성장과 광전류 특성)

  • K.J. Hong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.81-81
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    • 2003
  • The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

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