• Proceedings of the Korean Society of Precision Engineering Conference
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• 1995.10a
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• pp.623-627
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• 1995

This paper deals with the process which automatically straightens the shaft whose straightness is over the tolerance. The developed straightening process is composed of the measuring module and the control module. In the measuring module, the deflection of each measuring point is automatically measured, and the press point and the reference press stroke is determined. In the control module, the springback is predicted by the observer using the calculated reference press stroke and on-line-measured force and deflection. Through a series of experiments, the validity of the proposed process was verified.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.53-56
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• 2001

Reverse engineering has been widely used for the shape reconstruction of an object without CAD data and it includes some steps such as scanning of a clay or wood model, and generating some manufacturing data in an STL file. A new approach to remove point data with Delaunay triangulation is introduced to deal with the size problems of STL file and the difficulties in the operation of RP process. This approach can be used to reduce a number of measuring data from laser scanner within a specified tolerance, thus it can avoid the time for handing point data during modeling process and the time for verifying and slicing STL model during RP process. Developed software enables the user to specify the criteria for the selection of group of triangles either by the angle between triangles or the percentage of triangles reduced, and thus RP models with accuracy will be helpful to automated process.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.1
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• pp.28-32
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• 2003

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.175-184
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• 2001

In this study, the improved throughput and stability in device fabrication could be obtained by applying CMP process to STi structue in 0.18 um semiconductor device. To employ the CMP process in STI structure, the Reverse Moat Process used to be added after STI Fill, as a result, the process became more complex and the defect were seriously increased than they had been,. Removal rate of each thin film in STI CMP was not uniform, so, the device must have been affected. That is, in case of excessive CMP, the damage on the active area was occurred, and in the case of insufficient CMP nitride remaining was happened on that area. Both of them deteriorated device characteristics. As a solution to these problems, the development of slurry having high removal rate and high oxide to nitride selectivity has been studied. The process using this slurry afford low defect levels, improved yield, and a simplified process flow. In this study, we evaluated the 'High Selectivity Slurry' to do a global planarization without reverse moat step, and also we evaluated EPD(Eend Point Detection) system with which 'in-situ end point detection' is possible.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.272-276
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• 2000

Reverse engineering refers to the process that creates a physical part from acquiring the surface data of an existing part using a scanning device. In recent years, as the non-contact type scanning devices become more popular, the huge amount of point data can be obtained with high speed. The point data handling process, therefore, becomes more important since the scan data need to be refined for the efficiency of subsequent tasks such as mesh generation and surface fitting. As one of point handling functions, the cross-sectioning function is still frequently used for extracting the necessary data from the point cloud. The commercial reverse engineering software supports cross-sectioning functions, however, these are only for cross-sectioning the point cloud with the constant spacing and direction. In this paper, adaptive cross-sectioning point cloud which allow the changes of the spacing and directions of cross-sections according to the constant spacing and direction. In this paper, adaptive cross-sectioning algorithms which allow the changes of the spacing and directions of cross-sections according to the curvature difference of the point cloud data are proposed.

• Journal of the Chungcheong Mathematical Society
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• v.13 no.2
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• pp.19-27
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• 2001

In this paper we study another kind of the large deviation property, i.e. moderate deviation type for random amount of random measures on $R^d$ about a Poisson point process and a Poisson center cluster random measure.

• The Journal of Society for e-Business Studies
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• v.8 no.1
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• pp.15-33
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• 2003

A business process is classified into two processes; the private process which is implemented within an enterprise and the public process which is implemented between enterprises. The public process commonly used for B2B e-business is defined as a collaborative business process. To date, the collaborative business process has been studied in various aspects. We have categorized the research trends into two viewpoints, i.e., EAI(Enterprise Application Integration) and B2Bi (business to business Integration). In this paper, research trends in inter-organizational workflow are analyzed from the EAI point of view, and research trends in message-based business process and transactions from the B2Bi point of view.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.1360-1363
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• 1996

EPD(End Point Detection) is used to decide etching degree of layer which must be removed at wafer etching process in plasma etching process which is one of the most important process in semiconductor manufacturing. In this thesis, the method which detects malfunction of etching process in real-time will be discussed. Several EPD signal traces are collected in normal plasma etching condition and used as reference EPD signal traces. Critical points can be detected by applying differentiation and zero-crossing techniques to reference EPD signal. Mean and standard deviation of critical parameters which is memorized from reference EPD signal are calculated and these determine the lower and higher limit of control chart. And by applying statical control chart to EPD signals which are collected in real etching process malfunctions of process are detected in real-time. By means of applying this method to the real etching process we prove our method can accurately detect the malfunction of etching process and can compensate disadvantage of current industrial method.

• Proceedings of the Korean Statistical Society Conference
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• 2002.11a
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• pp.109-114
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• 2002

In this paper we propose a change-point estimator with left and right regressions using the sample Fourier coefficients on the orthonormal bases. The asymptotic properties of the proposed change-point estimator are established. The limiting distribution and the consistency of the estimator are derived.

• Journal of the Korean Data and Information Science Society
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• v.13 no.1
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• pp.165-175
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• 2002

We consider the problem of estimating the change-point in mean change model with the one change-point. Lombard (1987) suggested change-point estimation based on score functions. Gombay and Huskova (1998) derived a class of change-point estimators with the score function of rank. Various change-point estimators with the log score functions of ranks are suggested and compared via simulation.