KIEE International Transactions on Electrophysics and Applications

The Korean Institute of Electrical Engineers (대한전기학회)
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Determination of End Point for Direct Chemical Mechanical Polishing of Shallow Trench Isolation Structure

  • Published : 2003.01.01
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Abstract

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

Keywords

References

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