• Korean Journal of Hazardous Materials
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• v.6 no.2
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• pp.23-29
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• 2018

The fire and explosion properties necessary for waste, safe storage, transport, process design and operation of handling flammable substances are lower explosion limits(LEL), upper explosion limits(UEL), flash point, AIT( minimum autoignition temperature or spontaneous ignition temperature), fire point etc., An accurate knowledge of the combustion properties is important in developing appropriate prevention and control measures fire and explosion protection in chemical plants. In order to know the accuracy of data in MSDSs(material safety data sheets), the flash point of phenol was measured by Setaflash, Pensky-Martens, Tag, and Cleveland testers. And the AIT of phenol was measured by ASTM 659E apparatus. The explosion limits of phenol was investigated in the reference data. The flash point of phenol by using Setaflash and Pensky-Martens closed-cup testers were experimented at $75^{\circ}C$ and $81^{\circ}C$, respectively. The flash points of phenol by Tag and Cleveland open cup testers were experimented at $82^{\circ}C$ and $89^{\circ}C$, respectively. The AIT of phenol was experimented at $589^{\circ}C$. The LEL and UEL calculated by using Setaflash lower and upper flash point value were calculated as 1.36vol% and 8.67vol%, respectively. By using the relationship between the spontaneous ignition temperature and the ignition delay time proposed, it is possible to predict the ignition delay time at different temperatures in the handling process of phenol.

• ETRI Journal
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• v.46 no.4
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• pp.683-696
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• 2024

The point cloud provides viewers with intuitive geometric understanding but requires a huge amount of data. Moving Picture Experts Group (MPEG) has developed video-based point-cloud compression in the range of 300-700. As the compression rate increases, the complexity increases to the extent that it takes 101.36 s to compress one frame in an experimental environment using a personal computer. To realize real-time point-cloud compression processing, the direct patch projection (DPP) method proposed herein simplifies the complex patch segmentation process by classifying and projecting points according to their geometric positions. The DPP method decreases the complexity of the patch segmentation from 25.75 s to 0.10 s per frame, and the entire process becomes 8.76 times faster than the conventional one. Consequently, this proposed DPP method yields similar peak signal-to-noise ratio (PSNR) outcomes to those of the conventional method at reduced times (4.7-5.5 times) at the cost of bitrate overhead. The objective and subjective results show that the proposed DPP method can be considered when low-complexity requirements are required in lightweight device environments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Journal of Information Processing Systems
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• v.16 no.3
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• pp.688-698
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• 2020

Point clouds have ability to express the spatial entities, however, the point clouds redundancy always involves some uncertainties in computer recognition and model construction. Therefore, point clouds thinning is an indispensable step in point clouds model reconstruction and other applications. To overcome the shortcomings of complex classification index and long time consuming in existing point clouds thinning algorithms, this paper proposes a point clouds fast thinning algorithm. Specifically, the two-dimensional index is established in plane linear array (x, y) for the scanned point clouds, and the thresholds of adjacent point distance difference and height difference are employed to further delete or retain the selected sample point. Sequentially, the index of sample point is traversed forwardly and backwardly until the process of point clouds thinning is completed. The results suggest that the proposed new algorithm can be applied to different targets when the thresholds are built in advance. Besides, the new method also performs superiority in time consuming, modelling accuracy and feature retention by comparing with octree thinning algorithm.

• Journal of the Society of Naval Architects of Korea
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• v.44 no.1 s.151
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• pp.48-54
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• 2007

Higher productivity and less cost during the manufacturing process of ships are required to maintain international competitiveness of modern shipbuilding industries. The integrated hull/ outfitting/ painting scheduling(IHOP) process is a final point, where logistics are finally being integrated and upcoming schedules are made. Therefore, more profits are expected from IHOP by effective management. In this thesis, IHOP is proposed in order to solve how to choose block erection date with IHOP scheduling logic. The result of IHOP scheduling is highly advised to utilize fabrication, outfitting shops. A standardized operation and load of resource will eventually be applied in long-term time span point of view for this will make it easy to enable capacity planning and workforce planning. It is also expected to eliminate inefficiency in overtime work and efficiently utilize manpower in short-term.

• Journal of the Korean Statistical Society
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• v.26 no.1
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• pp.31-46
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• 1997

Let $X_{t}$ = .beta. $X_{{t-1}}$ + .epsilon.$_{t}$ be an autoregressive process where $\mid$.beta.$\mid$ < 1 and {.epsilon.$_{t}$} is independent and identically distriubted with regularly varying tail probabilities. This process is called the asymptotically stationary first-order autoregressive process (AR(1)) with infinite variance. In this paper, we obtain a host of weak convergences of some point processes based on bootstrapping of { $X_{t}$}. These kinds of results can be generalized under the infinite variance assumption to ensure the asymptotic validity of the bootstrap method for various functionals of { $X_{t}$} such as partial sums, sample covariance and sample correlation functions, etc.ions, etc.

• Communications of the Korean Mathematical Society
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• v.26 no.1
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• pp.23-35
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• 2011

In the present work we construct a composite implicit random iterative process with errors for a finite family of asymptotically nonexpansive random operators and discuss a necessary and sufficient condition for the convergence of this process in an arbitrary real Banach space. It is also proved that this process converges to the common random fixed point of the finite family of asymptotically nonexpansive random operators in the setting of uniformly convex Banach spaces. The present work also generalizes a recently established result in Banach spaces.

• 제어로봇시스템학회:학술대회논문집
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• 1987.10a
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• pp.780-785
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• 1987

The measuring point data of clay model are widely used to design parts whose external features are important design factor such as automobiles and general die products. This paper presents a method for improving the process to generate smooth surfaces from the measuring point data using turnkey CAD/CAM system. The process of smooth-surface generation involves several steps: styline finding, curve fairing, surface generation and filleting. The process is improved by automatic curve fairing, local correction of surface and multi-boundary surface treatment. An automobile bumper and a telephone receiver are measured and modeled to test the new method. Significant time saving is resulted by changing interactive mode to automatic mode and eliminating inefficient loop of surface generation process.

• East Asian mathematical journal
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• v.24 no.1
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• pp.105-110
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• 2008

The aim of this paper is to prove convergence of implicit iteration process to a common fixed point for a finite family of strong successive $\Phi$-pseudocontractive mappings. The results presented in this paper extend and improve the corresponding results of S. S. Chang [On the convergence of implicit iteration process with error for a finite family of asymptotically nonexpansive mappings, J. Math. Anal. Appl. 313(2006), 273-283], M. O. Osilike[Implicit iteration process for common fixed points of a finite finite family of strictly pseudocontractive maps, Appl. Math. Comput. 189(2) (2007), 1058-1065].